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Nonlinear photoemission from picosecond irradiated silicon (1985)

Malvezzi, A. M. ; Kurz, H. ; Bloembergen, N.

Springer

Applied physics 36 (1985), S. 143-146

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ISSN: 1432-0630

Keywords: 79.60.−i ; 64.70.Dv

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Three distinctly different regimes of photoelectric emission are observed over a wide fluence range of uv-laser pulses irradiating single-crystal silicon samples. The role of the electron-hole plasma in the nonlinear photoemission is demonstrated by temporal correlation measurements. The diffusion properties of hot carriers are analyzed by investigating the influence of energy transport by hot carrier diffusion on the fluence threshold for melting with uv photons.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00624934

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