ISSN:
1090-6487
Keywords:
73.50.Dn
;
73.61.Ey
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The Hall mobility of electrons is investigated as a function of the population of size-quantization subbands in the two-dimensional electron gas of a δ-doped layer in GaAs with constant total electron density N s =3.2×1012 cm−2 (three initially filled subbands) at T=4.2 K. The population of the subbands is varied by diamagnetic “ejection” of size-quantization levels (i.e., pushing them over the Fermi level) by a magnetic field oriented parallel to the plane of the δ-doped layer. The measurements are made in magnetic fields making small angles (5°) with the plane of the doping. The magnetic field component normal to the plane was used to measure the Hall mobility and density. It is found that the measured Hall mobility as a function of the ejecting magnetic field has a distinct maximum. This maximum is due to an increase in the electron mobility in the first subband (the ground subband is assigned the index 0) and electron redistribution between subbands with in increasing ejecting magnetic field parallel to the plane of the δ layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.567590
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