ISSN:
1090-6487
Keywords:
73.20.Mf
;
73.50.Pz
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract It was found that irradiating an array of Ge nanoclusters in n-Si with light that induced interband transitions gave rise to negative photoconductivity. This result was explained by localization of equilibrium electrons at the Si/Ge interface in the potential of the nonequilibrium holes trapped on deep states in Ge islands.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1320109
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