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  • 1
    Electronic Resource
    Electronic Resource
    Rapid growth of ultra thin SiO2 films by a large-area electron beam (1989)
    Springer
    Applied physics 48 (1989), S. 567-571 
    Details
    ISSN: 1432-0630
    Keywords: 52.80-s ; 79.20Kz ; 81.60-j ; 68.55-b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rapid growth of ultra thin oxide films (40–180Å) of silicon using a low-energy large-area electron beam has been performed with a pressure ratio of 3∶1 (O2/He) and a total pressure of 0.5–0.7 Torr. A higher oxidation rate of about 625Å2/s is found for shorter irradiation time of the e-beam in the e-beam dose range 0.75–3 Coulomb/cm2 and at lower substrate temperature 540–740°C. AES and XPS demonstrated a rapid electron-stimulated oxidation process of the Si surface. For the grown ultra thin oxide films, C-V characteristics, dielectric strength, uniformity of the film over the entire Si wafer and its thickness as a function of the processing time of the e-beam are also presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617858
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    Paper (German National Licenses)
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  • 2
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    Convective flows in enclosures with vertical temperature or concentration gradients (1989)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: The transport process in the fluid phase during the growth of a crystal has a profound influence on the structure and quality of the solid phase. In vertical growth techniques the fluid phase is often subjected to vertical temperature and concentration gradients. The main objective is to obtain more experimental data on convective flows in enclosures with vertical temperature or concentration gradients. Among actual crystal systems the parameters vary widely. The parametric ranges studied for mass transfer are mainly dictated by the electrochemical system employed to impose concentration gradients. Temperature or concentration difference are maintained between two horizontal end walls. The other walls are kept insulated. Experimental measurements and observations were made of the heat transfer or mass transfer, flow patterns, and the mean and fluctuating temperature distribution. The method used to visualize the flow pattern in the thermal cases is an electrochemical pH-indicator method. Laser shadowgraphs are employed to visualize flow patterns in the solutal cases.
    Keywords: MATERIALS PROCESSING
    Type: AIAA PAPER 89-0069
    Format: text
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  • 3
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    Convective flows in enclosures with vertical temperature or concentration gradients (1988)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: The transport process in the fluid phase during the growth of a crystal has a profound influence on the structure and quality of the solid phase. In vertical growth techniques the fluid phase is often subjected to vertical temperature and concentration gradients. The main objective is to obtain more experimental data on convective flows in enclosures with vertical temperature or concentration gradients. Among actual crystal systems the parameters vary widely. The parametric ranges studied for mass transfer are mainly dictated by the electrochemical system employed to impose concentration gradients. Temperature or concentration difference are maintained between two horizontal end walls. The other walls are kept insulated. Experimental measurements and observations were made of the heat transfer or mass transfer, flow patterns, and the mean and fluctuating temperature distribution. The method used to visualize the flow pattern in the thermal cases is an electrochemical pH-indicator method. Laser shadowgraphs are employed to visualize flow patterns in the solutal cases.
    Keywords: MATERIALS PROCESSING
    Type: NASA-TM-101373 , E-4421 , NAS 1.15:101373 , AIAA PAPER 89-0069 , Aerospace Sciences Meeting; Jan 09, 1989 - Jan 12, 1989; Reno, NV; United States
    Format: application/pdf
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