ISSN:
1432-0630
Keywords:
61.16 Bg
;
68.35.13s
;
68.55-.Jk
;
85.42.+m
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Growth and ordering of GeSi islands in Ge-Si multilayer systems during deposition by Low-Pressure Chemical Vapour Deposition (LPCVD) at 700°C on Si (001) substrates have been investigated for different layer distances by transmission electron microscopy of cross-section and plane-view specimens. Vertical ordering of GeSi islands with almost perfect correlation is observed for distances between the Ge layers of ≤ 100 nm. At larger interlayer distances, a continuous decrease of the correlation is found. Vertical ordering in the multilayer system is modelled in terms of the elastic interaction between island nuclei in a newly forming layer and close islands in a buried layer below. Lateral ordering parallel to 〈 100 〉, as observed previously in larger Ge-Si multilayer systems is not found in our systems, consisting of two Ge layers. This difference indicates that lateral ordering in the upper Ge layers of a large multilayer system is triggered by vertical ordering.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01571696
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