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  • 31.20.D  (1)
  • 68.55.Jk  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Growth and melting behaviour of thin in films on Ge(100) (1991)
    Springer
    Applied physics 53 (1991), S. 324-329 
    Details
    ISSN: 1432-0630
    Keywords: 64.70.Dv ; 68.55.Jk ; 76.80.+y
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed γγ angular correlation (PAC) spectroscopy, respectively. At room temperature inidium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature T m as well as a strong supercooling of the films is observed. The electric field gradient for 111In(111Cd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00357195
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  • 2
    Electronic Resource
    Electronic Resource
    Quantum chemical ab initio calculations for excited states of F IV (1993)
    Springer
    The European physical journal 27 (1993), S. 211-217 
    Details
    ISSN: 1434-6079
    Keywords: 31.20.D ; 31.50 ; 32.20.J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Quantum chemical ab initio calculations have been performed for the ground state and for several excited states of the F3+ ion (F IV). Three levels of accuracy have been used: Frozen-core SCF calculations (FRC-SCF) to determine orbital energies ε nl and quantum defects δ l for excited Rydberg orbitalsnl; frozen-core SCF followed by CI calculations (FRC-CI) which account for multiplet splittings and configuration mixings, and multi-configuration coupled-electron-pair approximation (MC-CEPA) calculations which include dynamic correlation effects. The accuracy of the calculated excitation energies is in the order of 5000 cm−1 at the FRC-CI level and in the order of 500 cm−1 at the MC-CEPA level. This latter error amounts to about 0.1% for excitation energies in the range of 400000 to 600000 cm−1. The MC-CEPA calculations have been performed for 17 experimentally known states and for 14 experimentally unknown states, in particular for the configurations 2s2p 2 (2 D)3s, 2s 2p 2(2 S)3s, 2s 2 2p 4p, and 2s 2 2p 5p.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01436533
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