Publication Date:
2013-04-12
Description:
Magnetron sputtering has been used to deposit Ni-rich nickel oxide thin films. Based on the switching of lateral current conduction in the nickel oxide thin film between two in-plane electrodes, a planar write-once-read-many-times memory device has been demonstrated. The switching from a low-conductance state (i.e., the OFF state) to a high-conductance state (i.e., the ON state) is induced by a writing voltage, and it is irreversible due to the formation of tilted conductive filaments that are hard to be dissolved by the Joule heating effect. For 80 devices under test, the writing voltage is in a narrow range of 2.0−3.5 V and the ON/OFF resistance ratio is larger than 10 5 at the reading voltage of 0.3 V. An excellent reading endurance (10 6 readings) for both ON and OFF states is demonstrated. The device is promising in low-power applications as it can operate at ultra-low voltages (e.g., the reading voltage can be below 100 mV).
Print ISSN:
1546-542X
Electronic ISSN:
1744-7402
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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