Publication Date:
2016-04-22
Description:
Article Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al . incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations suggest that the nanowires exhibit a direct band gap. Nature Communications doi: 10.1038/ncomms11405 Authors: Subhajit Biswas, Jessica Doherty, Dzianis Saladukha, Quentin Ramasse, Dipanwita Majumdar, Moneesh Upmanyu, Achintya Singha, Tomasz Ochalski, Michael A. Morris, Justin D. Holmes
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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