ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The structural properties of epitaxial indium nitride thin films were characterized and related to the mechanical properties as measured by nanoindentation. The seven epitaxial InN films examined were deposited over the temperature range 200–400°C by reactive magnetron sputtering on (0 0.1) sapphire substrates buffered with a thin AlN layer. The hardness, surface texture and crystal quality of the InN films were functions of the deposition temperature, with the maximum hardness (11.2 GPa), the smoothest surface, the minimum c-lattice constant (0.5708 nm), and the minimum (0 0.4) X-ray rocking curve width (0.6°) all occurring at the deposition temperature of 350°C. The crystal quality and the hardness of the InN films degraded at both higher and lower temperatures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1018587306451
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