ISSN:
1432-0630
Keywords:
71.55.Ht
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract 6H-silicon carbide layers are grown by a liquid phase epitaxy (LPE) process. The layers are doped with boron either by ion implantation or during the LPE process from a B-doped silicon melt. Deep-level transient spectroscopy (DLTS), admittance spectroscopy and photoluminescence (PL) are used to investigate deep impurity centers. Two electrically active defect centers are detected: the isolated boron acceptor at E B=E v+0.3eV and the boron-related D-center at E D=E v+0.58eV. The yellow luminescence observed in these layers is proposed to be due to pair recombination via D-center and nitrogen donor. Formation and origin of the D-center are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324007
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