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  • 1
    Electronic Resource
    Electronic Resource
    Fragments of acylated 6-O-α-l-rhamnopyranosylcatalpol from leaves of Premna japonica
    Amsterdam : Elsevier
    Phytochemistry 30 (1991), S. 4045-4047 
    Details
    ISSN: 0031-9422
    Keywords: Premna japonica ; Verbenaceae ; leaves ; monoacyl rhamnopyranose.
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0031-9422(91)83463-U
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  • 2
    Electronic Resource
    Electronic Resource
    Morphology of hydrofluoric acid and ammonium fluoride-treated silicon surfaces studied by surface infrared spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5646-5649 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Morphologies of Si surfaces treated with aqueous solutions of hydrofluoric acid (HF) and ammonium fluoride (NH4F) have been investigated using surface infrared spectroscopy. We confirm that HF-treated Si(111) surfaces are terminated with a monohydride (Si—H), dihydride (Si—H2), and trihydride (Si–H3), whereas NH4F-treated Si(111) surfaces are dominantly terminated with Si—H. For Si(100), treatment in NH4F produces a surface for which the dihydride mode is enhanced compared to HF treatment, suggesting that surface Si—Si bonds on Si(100) are readily cleaved in a NH4F solution to generate a dihydride Si. The effect of varying the HF concentration on the morphology of HF-treated Si(100) surfaces is investigated. It is demonstrated that 5% HF treatment produces Si(100) surfaces which have a larger density of surface Si—Si bonds than 50% HF or 0.5% HF treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350497
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  • 3
    Electronic Resource
    Electronic Resource
    Extended x-ray absorption fine structure study of bond lengths in epitaxially grown (Ga,In)(As,P) alloys from dilute limit to concentrated (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4513-4517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure (EXAFS) measurement is the technique to measure nondestructively the nearest-neighbor distance, to the accuracy within 0.01 A(ring) or better, coordination number, and atomic species. Especially, fluorescence-detected EXAFS is best suited to characterize the atomic scale microstructure of epitaxially grown thin layers on a thick substrate. We have investigated the microstructure for each atomic pair of Ga-P, Ga-As, and In-As in (Ga,In)(As,P) alloys lattice-matched with InP, over a wide range of composition from dilute limit, through quaternary, to ternary. Constant atomic distances over the wide range were revealed when the average lattice parameter was kept constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346182
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen termination of the NH4F-treated Si(111) surface studied by photoemission and surface infrared spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2488-2491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Si(111) surface treated in a saturated solution of NH4F has been investigated using photoemission spectroscopy with synchrotron radiation and surface infrared spectroscopy (SIS) in the multiple internal reflection mode. Photoemission and SIS data clearly demonstrate that the NH4F-treated Si(111) surface is dominantly terminated with the monohydride Si (Si-H) oriented perpendicular to the surface and is free from silicon oxide. It is suggested that the absence of silicon oxide is closely related to the atomic flatness of this surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351541
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  • 5
    Electronic Resource
    Electronic Resource
    Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 66-70 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated thin (In, Mn)As layer and (In, Mn)As quantum dots (with Mn mole fraction lower than 0.02) on GaAs(001) by fluorescence extended x-ray absorption fine structure (EXAFS) in order to study the local structures formed around the Mn atoms. The EXAFS analysis revealed that in a 10 nm thick (In, Mn)As layer, the In-site substitutional Mn and the NiAs-type MnAs coexisted, while the majority of the Mn atoms were substituted in the In-sites of InAs in (In, Mn)As quantum dots. It is considered that different growth modes for the thin layer and the quantum dots affect the local structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330761
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  • 6
    Electronic Resource
    Electronic Resource
    Lattice accommodation in heteroepitaxial semiconductor layers grown beyond critical thickness (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 143-145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The accommodation of lattice mismatching in InPAs layers with thickness from one monolayer to 200 A(ring) grown on InP substrates is measured by extended x-ray-absorption fine structure. Measured critical thicknesses agree with model calculations. In the layers beyond the critical thickness, gradual lattice accommodation with increase of the layer thickness is observed. The lattice accommodation mechanism beyond the critical thickness is discussed by comparison with the calculations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359381
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  • 7
    Electronic Resource
    Electronic Resource
    Surface morphology and structural changes in insulators induced by high-current 60 keV Cu− implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2195-2199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface morphology and structural changes of amorphous (a-), crystalline (c-) SiO2 and MgAl2O4 spinel, implanted with high-current Cu− of 60 keV, were studied using atomic force microscopy. Kinetic variation of the surface morphology was evaluated by changing dose rate from 1 to 100 μA/cm2. In the cases of a-SiO2 and c-SiO2, the surface morphology significantly varied with dose rate: dome-type textures in the lower dose-rate region caused radiation-induced roughening, while net-type ones in the higher region occurred with radiation-induced smoothing. Step-height measurements showed radiation-induced expansion and compaction for c-SiO2 and a-SiO2, respectively. Radiation-induced amorphization is responsible for the expansion processes of c-SiO2. Contrarily, no amorphization was observed in the spinel up to dose rates of about 100 μA/cm2, although radiation-induced swelling, due to defect accumulation, was discernible by the step-height measurement. The surface morphology and the roughness of the spinel were not very dependent on dose rate. The results of c-SiO2 and a-SiO2 indicate that both of them are subjected to enhanced changes in surface morphology and microstructures and that high-current implantation causes highly dynamic states in the near-surface region. On the other hand, the results for the spinel show pronounced stability and that the spinel may be used as an effective substrate for optical modification, even for high-current ion implantation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388599
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  • 8
    Electronic Resource
    Electronic Resource
    Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1559-1561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown Er,O-codoped InGaAs/GaAs multiple-quantum-well (MQW:Er,O) structures by low-pressure organometallic vapor phase epitaxy (OMVPE), and investigated their luminescence properties. The MQW structures are designed to emit light at 0.98 μm for direct excitation of Er ions. Degradation of the structures due to introduction of Er and oxygen is not observed in x-ray diffraction patterns. Er ions doped with oxygen exhibit a sharp and well-ordered photoluminescence spectrum predominantly from one kind of Er center (Er-2O center). Photoluminescence excitation measurements on MQW:Er,O and Er,O-codoped GaAs samples reveal that under below-GaAs-band-gap excitation (830–940 nm), the Er-related luminescence is observed only in the MQW:Er,O sample. It indicates that the luminescence originates from Er ions in InGaAs QWs by means of trap-mediated excitation process. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456971
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  • 9
    Electronic Resource
    Electronic Resource
    Collective behavior of wakes downstream a row of cylinders (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 8 (1996), S. 2097-2106 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This experimental study is devoted to visualisation and ultrasonic velocity measurement of the wakes formed behind a row of parallel cylinders placed side by side, perpendicular to an incoming flow at low Reynolds numbers. When the distance separating the cylinders is small compared to their diameter, two instability mechanisms, associated with different patterns and dynamics compete. A first spatial symmetry breaking appears when the stationary wakes behind each cylinder are deviated towards one side or the other and form large clusters containing from two to sometimes more than ten wakes. These clusters are separated by intense recirculating zones. When the Reynolds number is increased, the wakes belonging to the widest clusters experience a secondary temporal oscillatory bifurcation. Classical Bénard-Von Kármán vortex streets are thus shed in phase by these cylinders (acoustic mode), by contrast with the wakes outside these cells which stay stationary. Finally, the flow around far apart cylinders is also investigated. The primary instability does not occur in this case and a perfect optical mode of vortex shedding, with neighbours in phase opposition, takes place in the flow. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868984
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  • 10
    Electronic Resource
    Electronic Resource
    Growth temperature dependence of intrinsic and extrinsic acceptor concentration in (Ga,Al)Sb evaluated by C-V characteristics of metal-insulator-semiconductor structures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1261-1265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth temperature (TG) dependence of the acceptor concentrations (NA) in Al0.1Ga0.9Sb grown by liquid phase epitaxy in a very wide growth temperature range (250–500 °C) was investigated. It was found that NA varies with TG down to 350 °C as NA ∝exp(Ea/kBTG) with Ea=0.47 eV and that below 350 °C NA fluctuates depending highly on growth conditions. Acceptors in Al0.1Ga0.9Sb grown above 350 °C were concluded to be intrinsic. These observations were successfully made using the improved extremely low-temperature growth process. The evaluation technique of measuring the impurity concentration in a thin epitaxial layer on the conductive GaSb substrate by C-V characteristics of metal-insulator-semiconductor structures was employed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335456
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