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Scribing and cutting a blue LED wafer using a Q-switched. Nd:YAG laser (2000)

Lee, J.-M. ; Jang, J.-H. ; Yoo, T.-K.

Springer

Applied physics 70 (2000), S. 561-564

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ISSN: 1432-0630

Keywords: PACS: 42.62; 85.60.J; 52.75.R

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract. Sapphire wafer is found to be scribed and cut freely by plasma from a metal surface on which a Q-switched Nd:YAG laser beam is focused through the wafer. The wafer is scribed enough to be cut using a Q-switched Nd:YAG laser with the average power of 5 W at atmospheric environment without a vacuum chamber. This method is successfully applied to split each device from a blue LED wafer including about 10000 blue LED devices grown on a sapphire wafer.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s003390051080

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