Publication Date:
2015-03-31
Description:
Author(s): X. Shi, W. Pan, K. W. Baldwin, K. W. West, L. N. Pfeiffer, and D. C. Tsui We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν=5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We... [Phys. Rev. B 91, 125308] Published Mon Mar 30, 2015
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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