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  • 1
    Electronic Resource
    Electronic Resource
    Substrate temperature dependence of homoepitaxial growth of Si using mass selected ion beam deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4383-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homoepitaxy of silicon at low temperature has been achieved using low-energy mass selected silicon ion beams. Reflection high-energy electron diffraction and Rutherford backscattering spectrometry have been utilized to assess the quality of silicon films deposited from 15 eV 28Si+ beams in the temperature range of 50–350 °C. Auger electron spectroscopy was used to monitor the contaminant levels on the surfaces. The films deposited at 350 °C are epitaxial and of a quality near that of the original substrate. The growth rate at 350 °C is ≈200 times faster than that for solid phase epitaxy. At 50 and 200 °C layer-by-layer epitaxial growth was inhibited and evidence for formation of three-dimensional islands in the early stage of growth followed by transition to an amorphous phase was observed. The transition to an amorphous phase occurred at lower film thickness (smaller ion dose) for lower temperatures. It is shown that small amounts of N+2 impurity in the 28Si+ beam, sufficient to add 1.4 at. % N to the silicon film, result in amorphous films, even at the highest temperature used, 350 °C. The effects of substrate temperature, contamination, and surface damage on the growth mechanism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357328
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  • 2
    Electronic Resource
    Electronic Resource
    Ab initio study of lutetium dimer (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 6656-6659 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ab initio quadratic CI calculation method and the effective-core-potential basis set have been used to calculate the equilibrium geometries, potential energy curves, dissociation energies of the ground state, and low-lying electronic states of Lu2 for the first time. The symmetries of these states are determined by analyzing the potential energy curves and optimization calculations at the same time. The analytical potential energy functions of these states have been fitted with the Murrell–Sorbie potential energy function from the calculated values with the ab initio method. The spectroscopic parameters of each state are calculated through the relationship equations between analytical potential energy function and spectroscopic parameters, and are compared with some other theoretical and experimental data available from the experiment at present. For the ground state, we obtain the symmetry is X 3Σg, ωe=113.3 cm−1 with ωeχe=0.16 cm−1, leading to a spectroscopic dissociation energy of 1.79 eV. They are in agreement with the recent experiments. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462617
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of thin-film high Tc superconductors by metalorganic deposition (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2152-2154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic deposition (MOD) is a nonvacuum method of thin-film deposition which allows easy alteration of chemical components and is compatible with thin-film processing. We report the preparation of thin-film superconductors by MOD. Rutherford backscattering spectrometry was used to determine film compositions and thicknesses. Films, approximately 500 nm thick, of YBa2Cu4Oz (z undetermined) were deposited on 〈100〉 single-crystal SrTiO3. A superconducting onset temperature of 90 K was measured with 37 K the zero resistance temperature. Scanning electron microscopy revealed grain sizes approximately 250 nm in diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98978
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  • 4
    Electronic Resource
    Electronic Resource
    Accurate comparative measurement of oxygen content variations in YBa2Cu3O7−δ films due to postdeposition annealing (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 649-651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Non-Rutherford elastic resonance scattering, 16O(α,α)16O at 3.045 MeV, has been used to measure the change in relative oxygen content, δ of dc-sputtered YBa2Cu3O7−δ (YBCO) films due to postdeposition annealing to a precision of 1%. Experimental results show that only 3.4% of the total amount of oxygen in YBa2Cu3O7−δ is absorbed in the postdeposition annealing process, and this agrees with our x-ray diffraction data. The presence of oxygen during annealing, which leads to the transition to the superconducting orthorhombic structure, may also be understood as providing a more favorable environment for structure reformation, rather than only adding more oxygen into the YBCO film. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1344571
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  • 5
    Electronic Resource
    Electronic Resource
    Doping of p-type shallow junctions using electron beam evaporation of boron layers for compatibility with complementary-metal-oxide-semiconductor technology (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 76-78 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam evaporation was used as a low-temperature deposition process of boron and boron/amorphous-silicon layers as dopant sources in rapid thermal diffusion. High efficiency of doping is attributed to high dopant supply from the boron layer to the silicon substrate. Oxygen ambient leads to layer consumption and thus opens possibility for the source removal after diffusion. Dopant activation results in high carrier concentration within the junctions. High concentrations of dopant cause generation of precipitates at the B/Si substrate interface but not at the B/Si cap interface. The process is compatible with the complementary-metal-oxide-semiconductor technology since the low temperature of the source deposition facilitates masking of the dopant by a patterned photoresist and its subsequent lift-off removal from the silicon surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114150
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of boron nitride and boron carbide composite by nitrogen implantation at elevated temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1643-1645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron carbide (B4C) is a wear resistant material with hardness slightly less than that of diamond. It has an excellent strength to weight ratio and relatively high toughness under controlled processing. These essential mechanical properties make B4C an ideal candidate for cutting tool and bearing applications. We will demonstrate that hexagonal boron nitride (h-BN), a good solid lubricant, can be formed on B4C surfaces through high temperature (850 °C) nitrogen ion implantation. The formation of composite B4C and h-BN on the B4C surface can potentially reduce surface friction coefficients, making the material more attractive for tribological applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110722
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  • 7
    Electronic Resource
    Electronic Resource
    High energy carbon ions implantation: An attempt to grow diamond inside copper (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2650-2652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1 MeV carbon ions were implanted into single-crystal copper which was then annealed in argon at temperatures ranging from 350 to 750 °C. Regrowth of the radiation-damaged copper was examined by RBS-channeling measurements. Carbon segregation occurred on annealing at 750 °C. Prolonged annealing at 750 °C caused blistering of the copper layer over the buried carbon. After removal of the blistered copper overlayer, the previously buried carbon layer was examined by Raman scattering, showing that graphite is the dominant phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108097
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  • 8
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    A modified model of helical resonator with predictable loaded resonant frequency and Q-factor (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-10-16
    Description: High voltage radio frequency (RF) supply is a critical part in an ion trapping system. The RF supply should have high Q-factor and relatively high driving frequency. A frequently used RF supply for an ion trap system is a helical resonator. In certain applications, it is advantageous to have a predictable resonant frequency and Q-factor when the helical resonator is connected to a capacitive load. We develop a model to describe the behavior of a helical resonator with capacitive load. With this model, we can correctly predict the loaded resonant frequency and the loaded Q-factor. To test our prediction, we construct a helical resonator, and measure its resonant frequencies and Q-factors under different capacitive loads. The experimental results agree with our prediction.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Field-free spin Hall effect driven magnetization switching in Pd/Co/IrMn exchange coupling system (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-09-27
    Description: All electrical manipulation of magnetization is crucial and of great important for spintronics devices for the sake of high speed, reliable operation, and low power consumption. Recently, widespread interests have been aroused to manipulate perpendicular magnetization of a ferromagnetic layer using spin-orbit torque (SOT) without field. We report that a commonly used antiferromagnetic material IrMn can be a promising candidate as a functional layer to realize field-free magnetization switching driven by SOT in which IrMn is employed to act as both the source of effective exchange bias field and SOT source. The critical switching current density within our study is J c  = 2.2 × 10 7  A/cm 2 , which is the same magnitude as similar materials such as PtMn. A series of measurements based on anomalous Hall effect was systematically implemented to determine the magnetization switching mechanism. This study offers a possible route for IrMn application in similar structures.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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