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  • 1
    Electronic Resource
    Electronic Resource
    Effects of rapid recurrent annealing on structure and magneto-optical properties of garnet films : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6832-6834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method to improve the morphology and the microstructure of sputtered bismuth-substituted garnet films for optical storage is discussed. The method employs a high ramp up rate and recurrent annealing as well as quenching in an air environment, which results in smaller grain size, smoother surface, and less void volume in the garnet films than that from a conventional oven annealing. We have discovered that samples prepared with a more recurrent annealing only appeared as a single garnet phase, and the samples with a less recurrent annealing appeared as a garnet phase as well as DyFeO3 phase. We observed the microstructure of the annealed films with scanning electron microscopy (SEM). By applying the new method, the as-deposited films had been successfully crystallized to the (BiDy)3(FeGa)5O12 garnet phase with the grain size of about 300–400 A(ring). They exhibited excellent magneto-optical properties with a high coercive force about 1300 Oe and an effective Kerr angle of 1.5°. The crystallization process of as-deposited amorphous films as well as the structure, composition, and magnetic and magneto-optical properties of the crystallized garnet films were examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352451
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of helium ion double implantation on CD bubble device (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4046-4048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of helium ion double implantation on contiguous disk (CD) bubble devices have been examined by x-ray diffraction, FMR, and annealing techniques. The results were compared with static and dynamic performance of CD devices. Samples had a composition of Sm0.29Lu0.40Y1.42Ca0.89Fe 4.11Ge0.89O12 with stripe width 3 μm, Hc=143 Oe and were implanted with 190-keV helium at 4.5×1015 He+/cm2 and 100-keV helium at 3 ×1015 He+/cm2. X-ray diffraction curves show that He ion double implantation gives a more uniform strain profile with a main strain of 0.84% and a strain induced anisotropy field of 3100 Oe. FMR spectrum results show an implantation induced anisotropy field of 3185 Oe which is in good agreement with x-ray diffraction result. The main strain decreases linearly with the annealing temperature Ta extrapolating to zero at l000 °C. The implantation induced anisotropy field also decreases with Ta, but exhibits an excess of 600 Oe over the strain anisotropy field. This excess is attributed to the suppression of growth induced anisotropy by He ion implantation. The measurements of the bubble collapse field and propagation margin on a CD track with 12-μm period at 100 kHz show that annealing at temperatures higher than 300 °C causes the performance of CD devices to degrade very rapidly. The margin becomes narrow and the minimum drive field increases. Annealing above 500 °C will kill the device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334666
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  • 3
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    Reversal pathway dependent asymmetric recovery effect in polycrystalline FeNi/FeMn bilayers (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-07-25
    Description: For the exchange biased polycrystalline FeNi/FeMn bilayers, we systematically studied the ferromagnet (FM) magnetization reversal pathway dependent recovery effect of training using a vector vibrating sample magnetometer. Our experimental results show unambiguously that the well-known recovery effect strongly depends on the FM magnetization reversal pathway in addition to the final FM magnetization orientation. If the FM magnetization rotates in two opposite directions, i.e., clockwise (CW) or counter clockwise (CCW), to the same final FM magnetization orientation, the recovery effect exhibits distinct asymmetry. For the present initial magnetization configuration, only the CW pathway induces recovery effect, whereas it is impossible to produce training recovery through the CCW pathway. This recovery asymmetry can be explained by considering the random distribution of antiferromagnetic grains' easy axes and the FM magnetization reversal history as well.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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