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  • American Institute of Physics (AIP)  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Spontaneous modulation of composition in Ta-Si films produced by pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3623-3625 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ta-Si films with different composition ratio were prepared by the pulsed laser deposition technique on a Si3N4/Si(100) substrate at room temperature. Cross-sectional transmission electron spectroscopy (TEM) and Auger electron spectroscopy in combination with Rutherford backscattering spectroscopy were employed to investigate the deposited structures. As-deposited films were found to be spontaneously modulated with composition along the growth direction, the period of the structure depending upon Si/Ta average composition ratio, and is about 50 A(ring) in thickness. Auger electron spectroscopy analysis confirms the codeposited Ta-Si layers reveal an oscillating character of the chemical bonding. The contrast analysis of cross-sectional TEM images and the study of electron-diffraction patterns identify amorphous state (up to the resolution of analytical technique) of the deposited layers. The observed effect is attributed to the nature of the depositing flux.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111224
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  • 2
    Electronic Resource
    Electronic Resource
    On the role of Ge in the growth of β-FeSi2 on silicon (100) surfaces (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 904-906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of β-FeSi2 silicide layers formed with the addition of Ge by pulsed laser deposition at 650 °C on (001) Si substrate has been investigated by transmission electron microscopy and Mössbauer spectroscopy. The Ge atoms are not incorporated in the silicide in noticeable amounts but the addition causes the growth of β-FeSi2 micrograins with a high density of specific twin lamellae, whereas Ge segregates in epitaxial SiGe alloy grains. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497185
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