Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 336-337
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Influences of GaAs cap layer thickness on residual strain in partially relaxed, 25-nm-thick In0.2Ga0.8As/GaAs single quantum wells have been investigated by photoluminescence and photoreflectance at 77 K. It was found that the residual strain increased and the optical quality improved with increasing cap layer thickness. Therefore, both quantum well and cap layer thicknesses determine the optical quality in lattice-mismatched semiconductor heterostructures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112363
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