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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4145-4153 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All four possible chemical reactivity patterns, namely, outdiffusion of Te (metal-Cd alloy formation), Cd outdiffusion (metal telluride compound formation), comparable chemical reactivity of the metal towards both Cd and Te (no Cd or Te outdiffusion), and chemical inertness of the metal towards CdTe, were differentiated via the differential scanning calorimetry (DSC) technique from a study of the interaction of nine different metals toward CdTe powder. The fusion signatures of free Cd or Te, exotherms due to compound or alloy formation, along with the thermal transitions of the metal telluride and/or the intermetallic were used for this purpose. These reactivity patterns are discussed within the framework of two different thermodynamic models. Both virgin and chemically etched CdTe surfaces were examined, and found to exhibit rather different reactivity trends towards the metal. The ramifications of these results in terms of the electronic properties of metal/CdTe contacts are discussed. Finally, DSC is shown to be useful for probing alterations in the CdTe surface chemistry as a result of the etch treatment.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1329-1330 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization curves of a DyBa2Cu3Oy crystal prepared by the melt-textured growth method were measured from 10 to 85 K with the magnetic field parallel to the c axis. The scaling behavior of the virgin magnetization curves is observed and explained in terms of an extended Bean model.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1429-1434 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of tungsten silicides have been formed on samples of W(50 nm)/Ti(5 or 10 nm)/Si〈100〉 by rapid-thermal annealing. The results of the experiments show that by interposing a thin layer of Ti at the W-Si〈100〉 interface, the temperature at which WSi2 is first detected is lowered to 570–600 °C, and the W-Si reaction rate is increased, as compared to the W/Si〈100〉 samples. The resulting WSi2 film has an electrical resistivity of about 115 μΩ cm with a smooth surface. Neither the W-rich silicide phase, W5Si3, nor the hexagonal WSi2 phase is found in the annealed samples. The growth kinetics are monitored using a four-point probe, x-ray diffraction, scanning electron microscopy, and scanning Auger analysis.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 607-609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-intensity quartz-halogen tungsten lamps were used to form platinum silicide films. Platinum films of 42 and 52 nm were evaporated on single-crystal silicon and subsequently processed in a roughing vacuum from 5 up to 20 sec. The electrical characteristics and the microstructure of the silicide films were studied by four-point probe measurements, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The silicide formation started within the first few seconds, and the reaction was essentially completed after 10 sec. The dominant phase was PtSi, while only a small amount of Pt2Si was detected in the 5- and 10-sec processed samples. The presence of oxygen and carbon in the film and processing ambient did not prevent the rapid silicide formation, although it gave rise to a surface layer composed of silicon oxide and other contaminants.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4200-4206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High intensity quartz-halogen tungsten lamps with power densities of 10, 15, and 25 W/cm2 were used to form palladium silicide films. Metal films of 83–200 nm were evaporated on (100)-oriented single-crystal silicon and subsequently processed in vacuum for time intervals from 5 to 60 s. The electrical characteristics and the microstructure of the silicide films were studied by four-point probe, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and Rutherford backscattering spectroscopy. A nonuniform PdSi film with dendritelike surface topography is formed at 25 W/cm2. A somewhat discontinuous low resistance film of predominantly PdSi is formed at 15 W/cm2. The same power density, for contaminated samples, induces agglomeration upon processing. A uniform Pd2Si film with a resistivity of 27 μΩ cm is obtained at 10 W/cm2. Longer processing times result in nucleation and growth of PdSi from Pd2Si.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1844-1846 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The susceptibility to hole trapping of the gate oxide of a metal-oxide-silicon (MOS) device is not necessarily proportional to the efficiency of interface trap generation at the Si-SiO2 interface, which is widely believed due to the recombination of electrons and trapped holes in the oxide close to the interface. In this study, an oxide given a high-temperature (1000 °C) anneal, which increases the hole trapping efficiency of the oxide, is shown to have much less generated interface traps compared to a normal oxide (without high-temperature annealing) upon exposing to ionizing radiation with subsequent electron injection, or high-field injection alone. Under high-field tunneling injection, the electron fluence required to create a certain density of interface trap is an order of magnitude higher for the annealed oxide compared to the normal oxide. These results could provide a possible direction for improving the reliability of the gate oxide of a MOS field-effect transistor.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 31 (1988), S. 1544-1548 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tearing instability in a current sheet, which has a sub-Alfvénic or super-Alfvénic plasma flow in the current layer, is investigated based on the linearized compressible magnetohydrodynamic (MHD) equations. An initial-value method is employed to obtain the linear growth rate and eigenmode profiles of the fastest growing mode. The results show that for a sub-Alfvénic plasma flow parallel to the neutral sheet, the growth rate of the tearing instability is only slightly larger than that of the pure tearing mode without the flow. On the other hand, a large increase in the growth rate of the most unstable mode is observed, when the streaming speed V0m in the central region of the current sheet increases above a critical speed VC(approximately-equal-to)1.2VA∞. Here VA∞ is the Alfvén speed far away from the current layer. This study shows that when the electric resistivity η is zero, the sausage mode is excited because of a super-Alfvénic plasma flow parallel to the current sheet. This flow-induced sausage mode is called the streaming sausage mode. In the presence of a finite resistivity, the streaming sausage mode becomes a mixed sausage–tearing mode, because of the presence of magnetic field line reconnections in the current sheet. This mixed sausage–tearing mode, or simply the streaming tearing mode, has a high growth rate, γ(approximately-equal-to)0.1τ−1A, where τA is the Alfvén transit time across the current layer. This growth rate is larger than the growth rate of the pure tearing mode, which is approximately the inverse of the geometric mean of the Alfvén time τA and the diffusion time τD across the current layer.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1348-1350 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A depth profiling technique is described for molecular beam epitaxy grown (Al,Ga)Al/GaAs heterostructures which combines photoelectrochemical layer-by-layer removal with analyses by photocurrent spectroscopy. The technique is illustrated for two types of samples having a graded and "flat'' Al profile in the epilayer.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 357-359 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium nitride (TiN) is widely used as a barrier metal for submicron metallization because of its superior thermal stability. Various methods of forming TiN films have been explored. Oxygen passivation of the grain boundaries of the TiN and stoichiometry of the TiN are reported to be the dominant factors in achieving good barrier properties. We report on the structure property correlation of the TiN barrier metal films.
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polybuffered LOCOS is used for isolation of active devices in submicron integrated circuits. Many papers have reported on the defects resulting from this process. We report, for the first time, on the structure and composition of these defects and relate the defects to a phenomenon similar to the traditional Kooi effect [E. Kooi, J. G. van Lierop, and J. A. Apples, J. Electrochem. Soc. 123, 1117 (1976)].
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