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  • 1
    Electronic Resource
    Electronic Resource
    InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 751-753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study performance and reproducibility of photodiodes (PDs) on Si in the long-wavelength region, InAlAs/InGaAs metal-semiconductor-metal PDs were fabricated on high-quality heteroepitaxial InP layers on Si substrates. A dark current of 0.5–2×10−8 A and a responsivity of 0.05–0.15 A/W were reproducibly obtained, at least at one of the ±5 V bias voltages. These dark currents and responsivity are similar to those of PDs with the same structure fabricated on InP substrates. The PDs on Si have pulse responses with full widths at half-maximum of 150–600 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111055
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  • 2
    Electronic Resource
    Electronic Resource
    Electron spin resonance of polyparaphenylene-based carbons (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2042-2044 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electron spin resonance (ESR) results on heat-treated polyparaphenylene (PPP) over the heat-treatment temperature (THT) range of 650–2900 °C. Two distinct spin centers are identified corresponding to a broad (∼5 G) ESR peak below THT=750 °C and a narrow (∼0.5 G) ESR peak above THT=650 °C. ESR peaks from both spin centers are observable for THT=700 °C, a material of particular interest for device applications. T1 and T2, the spin-lattice and spin-spin relaxation times, respectively, are estimated for both spin centers, and these results are discussed in relation to previously reported Raman spectroscopy and magnetic susceptibility measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116873
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