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  • 1
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the highly damped modes in the energy and reaction rates in a plasma are discussed. These modes, with wave numbers k(very-much-greater-than)kD, even being only weakly excited, with less than kBT per mode, make a significant contribution to the energy and screening in a plasma. When the de Broglie wavelength is much less than the distance of closest approach of thermal electrons, a classical analysis of the plasma can be made. It is assumed, in the classical analysis, with (h-dash-bar)→0, that the energy of the fluctuations (h-dash-bar)ω(very-much-less-than)kBT. Using the fluctuation-dissipation theorem, the spectra of fluctuations with (h-dash-bar)≠0 is appreciably decreased. The decrease is mainly for the highly damped modes at high frequencies (∼0.5–3kBT). Reaction rates are enhanced in a plasma due to the screening of the reacting ions. This is taken into account by the Salpeter factor, which assumes slow motion for the ions. The implication of including the highly damped modes (with (h-dash-bar)≠0) in the nuclear reaction rates in a plasma is discussed. Finally, the investigations presently done on these effects in particle simulations with the sheet model and the multiparticle quantum simulation code are described. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 5427-5433 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The triplet state energies, ET(0–0), for the α-oligothiophenes (αn's) with n=1–7, were determined and vary from 18 000 cm−1 (α2) to 13 000 cm−1 (α7). The data were obtained from spectroscopic and calorimetric measurements. It was found that the triplet energies decrease with the increase ring number (n), leveling off beginning with the α-oligothiophene with n=5. A linear relation was obtained for the triplet energy as a function of the reciprocal of n. The data has allowed the extrapolation to polythiophene (n=∞) and the evaluation of its triplet energy (≅10 000 cm−1). The energies (0–0) of the first singlet excited state of n=1–7 were also evaluated and again a linear relation was found for the E[S1(0–0)] as a function of 1/n. The S1−T1 energy splitting, ΔE(S1−T1), was determined and also found to decrease with the increase in the number ring. Semiempirical molecular orbital theoretical calculations reproduce this same trend of decreasing ΔE(S1−T1) with n. Extended FEMO theory was applied to the singlet and triplet energies as a function of the number of π electrons of the system. The data obtained are discussed regarding the length of the chain needed for an effective conjugation similar to that of the polymer (n=∞) and the geometries of the singlet and triplet states of the α-oligothiophenes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 2016-07-21
    Description: We report fabrication of reduced graphene oxide (rGO) films using chemical reduction by hydrazine hydrate and rGO paper-like samples using low temperature treatment reduction. Structural analysis confirms the formation of the rGO structure for both samples. Current-voltage (I–V) measurements of the rGO film reveal semiconductor behavior with the maximum current value of ∼3 × 10 −4 A. The current for the rGO paper sample is found to be, at least, one order of magnitude higher. Moreover, bipolar resistance switching, corresponding to memristive behavior of type II, is observed in the I–V data of the rGO paper. Although precise values of the rGO film conductivity and the Seebeck coefficient could not be measured, rGO paper shows an electrical conductivity of 6.7 × 10 2  S/m and Seebeck coefficient of −6  μ V/ °C. Thus, we demonstrate a simplified way for the fabrication of rGO paper that possesses better and easier measurable macroscopic electrical properties than that of rGO thin film.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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