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  • American Institute of Physics (AIP)  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of metal phthalocyanines on hydrogen terminated vicinal surfaces of Si(111) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2502-2504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-terminated vicinal Si(111) surfaces provide quasi-van der Waals substrates with regularly spaced atomic height steps for the epitaxy of organic material films. Molecular beam epitaxy of vanadyl and copper phthalocyanines (VOPc and CuPc) was attempted on just-cut and 7°-miscut surfaces in order to investigate the effect of the steps on the epitaxial growth feature. The molecular arrangement of the films was characterized by a new technique using multiple-azimuth reflection high energy electron diffraction. Growth on misoriented substrates producted VOPc monolayer films consisting of one-dimensional chains nearly aligned to the steps and multilayer CuPc films with controlled domain orientations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115835
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  • 2
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs{111} surfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 327-329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Layered transition metal dichalcogenides (MoSe2, NbSe2) have been heteroepitaxially grown on (NH4)2 Sx (x(approximately-equal-to)2) treated GaAs(111)Ga, GaAs(∼(111))As surfaces in spite of the large difference in their crystal structures. The in situ observation of reflection high-energy electron diffraction has shown that the grown film has its own lattice constant even from the first layer. The lattice matching condition, which is severely restricting in the usual heteroepitaxial growth case, is greatly relaxed in the present system because only weak van der Waals forces exist between the grown film and the substrate. This results from the fact that sulfur atoms regularly terminate dangling bonds on the GaAs surface after the (NH4)2Sx treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102817
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  • 3
    Electronic Resource
    Electronic Resource
    Selective epitaxial growth of organic molecules on patterned alkali halide substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 941-943 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective epitaxial growth of organic materials is found and analyzed. It is observed during the molecular beam epitaxy of organic molecules and charge transfer complexes on ionic surfaces. The selectivity comes from lattice matching condition on critical nuclei formation in contrast to compound semiconductors for which covalent chemical bonding plays essential roles. It can be utilized to fabricate micropatterns of crystalline organic materials accompanied by lithography processes of alkali halides using NH3 plasma. Feasibility of building three-dimensional microstructures has also been shown, which is readily applicable to make photonic crystals from optically functional organic materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123416
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation and magnetic properties of manganese(II) phthalocyanine thin films (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 10256-10261 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the molecular beam epitaxy (MBE) growth of the manganese(II) phthalocyanine thin films with unique crystal structure and the measurement of their magnetic properties. The epitaxial films were grown on hydrogen-terminated Si(111) substrates. Reflection high energy electron diffraction observations showed that the crystal structure of the films is different from that of the bulk crystal. A large magnetic anisotropy was observed in the measurements with the SQUID magnetometer. The films did not show canted ferromagnetism which is usually observed in the β-type crystal of manganese phthalocyanine. The magnetic susceptibility measured with magnetic field normal to the substrate obeyed the Curie–Weiss law with a negative Curie–Weiss constant, indicating the existence of the antiferromagnetic interaction. The negative Curie–Weiss constant was also observed in disordered films of manganese phthalocyanine. The variation of magnetic properties between the bulk crystal and the films is explained in terms of the difference in superexchange interaction caused by microscopic modification of the crystal structure, i.e., the stacking arrangement of the molecules. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476486
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