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  • 1
    Electronic Resource
    Electronic Resource
    Violet laser emission in copper halides (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4897-4899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With two-photon excitation into the longitudinal exciton or into the excitonic continuum copper halides show laser emission at wavelengths of 413.3 nm (CuI), 422.5 nm (CuBr), and 391.9 nm (CuCl). The linewidth of the emission is very narrow in CuI and CuBr (below 0.004 nm) and much broader in CuCl (0.4 nm). The laser transition occurs between the bottleneck of the exciton polariton and the longitudinal optical phonon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357268
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  • 2
    Electronic Resource
    Electronic Resource
    Distribution of internal strains in nanocrystalline Pd studied by x-ray diffraction (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7186-7192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal strains in cluster-compacted nanocrystalline Pd (crystallite size 10–20 nm) were studied by means of wide-angle x-ray scattering. The strain- and size-induced broadening of the Bragg diffraction peaks was determined by Hall or Warren–Averbach analyses. The Warren–Averbach analysis indicates a spatial confinement of internal strain fields. This result supports theoretical models according to which the sources of the stresses are located in the interfaces between the crystallites. Indirect further evidence for a stress localization is derived from recent findings on the variation of internal strains and atomic displacements with the crystallite size. In addition, an anisotropy of the line broadening was observed which cannot entirely be attributed to planar defects (maximum concentration 0.04) but indicates enhanced microstrains in the crystallographic 〈100〉 directions compared to the 〈111〉 directions. Based on this strain anisotropy, various distributions of microstresses are discussed taking into account the substantial elastic anisotropy of Pd. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365307
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  • 3
    Electronic Resource
    Electronic Resource
    Γ- and X-band contributions to nonresonant tunneling in GaAs/Al0.35Ga0.65As double quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2517-2519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence in the picosecond regime is performed on an asymmetric GaAs/Al0.35Ga0.65As double quantum well structure with a barrier thickness of 6 nm to obtain the Γ- and X-point barrier contributions to nonresonant tunneling. Application of hydrostatic pressure up to 37 kbar at 5 K reveals that tunneling via virtual X states is at least 800 times less efficient than via virtual Γ states. Above 24.5 kbar an extremely fast scattering of electrons out of the n=1 quantized level of the narrower quantum well is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101994
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  • 4
    Electronic Resource
    Electronic Resource
    Direct comparison of the pressure-induced band-gap shifts in cubic and hexagonal GaN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2971-2973 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence measurements are performed simultaneously on cubic (zinc blende) and hexagonal (wurtzite) gallium nitride at hydrostatic pressures up to 11.9 GPa. The linear pressure coefficient of the band gap of hexagonal GaN is found to be (0.94±0.04) meV/GPa larger than that of cubic GaN. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368433
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  • 5
    Electronic Resource
    Electronic Resource
    Free excitons with n=2 in bulk GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 948-949 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct observation of free A, B, and C excitons with n=2 in hexagonal bulk gallium nitride (GaN) by two-photon spectroscopy is reported. From these data, the band gaps, exciton binding energies, and hole masses for the three uppermost valence bands are calculated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119697
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  • 6
    Electronic Resource
    Electronic Resource
    Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 μm (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1936-1938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ultrafast optical response of low-temperature-grown GaInAs/AlInAs multiple quantum wells is studied in pump-probe experiments with a femtosecond Er:fiber laser. As-grown samples doped with beryllium (concentration of 8×1017 cm−3) display a nonlinear transmission change, which decays by carrier trapping with a time constant of 230 fs. Experiments with pairs of ultrashort pulses separated by 1.5 ps demonstrate a fast modulation of transmission and very small accumulation effects, making this material highly promising for all-optical switching. Substantially longer recovery times are found in annealed, Be-doped samples and in undoped samples. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461429
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