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  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2623-2625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnetoresistance in an inclined magnetic field of a two-dimensional electron gas modulated by a two-dimensional array of thin cobalt nanostructures. At low fields, hysteretic behavior due to the magnetization of the elements was observed, and at higher fields magnetic commensurability (Weiss) oscillations were clearly seen. These magnetoresistance features only occurred when the in-plane component of the field was in the current flow direction. The commensurability oscillations behave exactly as predicted in a recent theory of two-dimensional surface superlattices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388574
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of Si0.75Ge0.25 alloy layers grown on Si(001) substrates using step-graded short-period (Sim/Gen)N superlattices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 202-208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-period (Sim/Gen)N superlattices (SSLs) are grown step by step on a Si(001) substrates by solid source molecular beam epitaxy. Using the step-graded SSLs as buffer layers, 2000 Å uniform Si0.75Ge0.25 alloy layers are grown on the same substrates. The growth temperature of the SSLs and uniform layers is 500 °C. In the SSLs layers, m and n are the number of monolayers of Si and Ge, respectively. N is the period of (Sim/Gen) bilayers. The samples grown are characterized by x-ray diffraction, atomic force microscopy (AFM), and transmission electron microscopy (TEM) as a function of the step number of SSL layers. The SSLs show very smooth surfaces [the root-mean-square (rms) surface roughness is between 7 and 12 Å]. A dramatic decrease in roughness is observed in the uniform Si0.75Ge0.25 alloy layers, when even a one-step SSL is used as a buffer layer. A noticeable increase in rms roughness is seen in both SSL and alloy layers when the number of Ge monolayers is changed from one to two. AFM observation shows that the rms surface roughness behavior of the SSLs is reflected to their corresponding top alloy layers. The residual strains in alloy layers are considerably lower, with a maximum relaxation rate of about 80% for the sample with a seven-step SSL buffer. Cross-sectional TEM images show that strained SSL buffer layers effectively deflect threading dislocations in the substrate or confine the dislocations in the SSL buffer layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378057
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  • 3
    Electronic Resource
    Electronic Resource
    Accurate determination of permanent magnet motor parameters by digital torque angle measurement : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6868-6870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a novel test method to determine the important load dependent reactance parameters Xd, Xq, and magnet-excited voltage E0 of permanent magnet (PM) motors. The results bring forward a clear picture of the impact of the previous assumption of constant E0 on the value of Xd. As improved accuracy and fast data sampling are required for online control, the traditional method for measuring torque angle is deficient. To this end, a new microprocessor-based digital torque angle measurement system was designed and built. At the same time, a scheme for accurately positioning the zero torque angle is proposed without referring to the interior structure of a motor. The proposed techniques have been successfully employed for a 1 hp laboratory permanent magnet motor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358096
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  • 4
    Electronic Resource
    Electronic Resource
    Donor complex formation due to a high-dose Ge implant into Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4252-4254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate boron deactivation and/or donor complex formation due to a high-dose Ge and C implantation and the subsequent solid phase epitaxy, SiGe and SiGeC layers were fabricated and characterized. Cross-sectional transmission electron microscopy indicated that the SiGe layer with a peak Ge concentration of 5 at. % was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of the Ge as a result of strain relaxation. Photoluminescence (PL) results were found to be consistent with dopant deactivation due to Ge implantation and the subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at. %), the PL results support our previously proposed donor complex formation. These findings were confirmed by spreading resistance profiling. A model for donor complex formation is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355963
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  • 5
    Electronic Resource
    Electronic Resource
    Interface analysis of Y-Ba-Cu-O films on Al-coated Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1275-1277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y-Ba-Cu-O films were deposited on Al-coated Si substrates by the plasma-spray method. The Al buffer layer appears to be effective in yielding crack-free adhesive Y-Ba-Cu-O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of x-ray microanalysis and x-ray photoelectron spectroscopy confirm that the Al buffer forms an Al2O3 layer and prevents precipitation of Cu at the film/substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101489
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  • 6
    Electronic Resource
    Electronic Resource
    Channeling and diffusion in dry-etch damage (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2215-2224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At present channeling is accepted to be the primary mechanism causing defects deep within dry-etched material, with diffusion possibly modifying the final defect distribution. In this article detailed analytic expressions are presented incorporating both these mechanisms. The dominant parameter affecting damage depth is found to be the mean channeling length. We show how enhanced diffusion, e.g., by illumination, may increase the observed damage. We also study the effect of damage on depletion depths and suggest how the channeling length may be inferred from the etch-depth dependence of conductance or Raman spectroscopy measurements. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366028
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  • 7
    Electronic Resource
    Electronic Resource
    Studies of damage in low-power reactive-ion etching of III–V semiconductors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2096-2108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of photoluminescence intensity from GaAs and InGaAs quantum well heterostructures have been used as a noninvasive probe of the damage distribution due to very low-power dry etching. Samples were etched using SiCl4 reactive-ion etching. Comparative studies were made on samples bombarded by the separate constituent ions of a SiCl4 discharge using a mass-resolving ion implanter fitted with a deceleration lens. We also examined the influence of more complex multicomponent discharges. We found that molecular ions contribute less to deep damage than do atomic ions. The reason is that molecular ions fragment upon impact and the secondary atomic ions do not channel very far. Studies of laser illumination on the sample during etching show that a form of radiation-enhanced diffusion can modify the damage distribution. The net picture emerges of a complex process underlying dry-etch damage penetration at very low energies. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342019
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  • 8
    Electronic Resource
    Electronic Resource
    Theory of a metal-semiconductor photodiode with grating coupling of the incident light to surface plasma waves (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 438-441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model has been developed to design a metal-semiconductor (Schottky barrier) narrow-band photodiode with grating coupling of the incident light to surface plasma waves. With optimal choice of grating parameters and the right combination of materials, the quantum efficiency can be increased over the flat surface geometry. The results of this model are in good agreement with the experimental results found in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343842
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of metal-insulator-semiconductor diodes fabricated from laser-ablated YBa2Cu3O7−δ /yttria-stabilized zirconia films on Si substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2889-2891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The purpose of this investigation is to study the electrical properties of the YBCO/YSZ/Si metal-insulator-semiconductor structure and the yttria-stabilized zirconia (YSZ)/Si interface. The YBCO and YSZ layers were epitaxially grown in situ on Si by pulsed laser deposition. Current-voltage measurements of devices fabricated on p-type Si(100) showed a small leakage current density at 292 K, which decreased further at 80 K. Comparison of capacitance-voltage measurements at 292 K for frequencies between 10 and 400 kHz showed a large variation of capacitance in the accumulation region demonstrating the presence of mobile ions in the YSZ layer. This variation is less pronounced at 80 K. A negative shift of about 5 V in threshold voltage from 292 to 80 K has been attributed to redistribution of charges in the YSZ buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106402
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  • 10
    Electronic Resource
    Electronic Resource
    Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3666-3668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate single electron charging in fully controllable nanoscale quantum devices at temperatures above 4 K. Hitherto, single electron devices operating at "high'' temperatures have been two-terminal, having no control electrode, whereas fully tunable structures such as quantum dots have only shown charging effects at temperatures of 4 K or less. We have fabricated ultrasmall quantum dots on modulation doped heterostructures where the two-dimensional electron gas is less than 30 nm from the surface. Dots with lithographic diameter 150 nm show Coulomb oscillations up to temperatures of 7 K. Higher temperature operation allows potential applications to be considered without the need, for example, of a dilution fridge. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114134
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