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  • 1
    Publication Date: 2015-05-07
    Description: A dense, homogeneous and crack-free ferroelectric PZT thin film with 〈100〉-preferred orientation was produced using the sol-gel method. The volume fraction α (100) of 〈100〉-oriented grains in the PZT film was calculated [ α (100) ≈ 80%] from XRD of the PZT thin film and powder. The PZT thin film exhibits an open polarization vs. electric field loop and a low leakage current density from 10 −8 A/cm 2 to 10 −7 A/cm 2 . The electrical conduction data were fit to a Schottky-emission model with deep traps from 100 kV/cm to 250 kV/cm. A modified capacitance model was introduced that adds electrical domain capacitance based on a metal-ferroelectric-metal (MFM) system with Schottky contacts. The model reproduces the observed non-linear capacitance vs. voltage behavior of the film.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 2
    Publication Date: 2016-09-17
    Description: In this manuscript, we examine ways to create multiferroic composites with controlled nanoscale architecture. We accomplished this by uniformly depositing piezoelectric lead zirconate titanate (PZT) into templated mesoporous, magnetostrictive cobalt ferrite (CFO) thin films to form nanocomposites in which strain can be transferred at the interface between the two materials. To study the magnetoelectric coupling, the nanostructure was electrically poled ex situ prior to magnetic measurements. No samples showed a change in in-plane magnetization as a function of voltage due to substrate clamping. Out-of-plane changes were observed, but contrary to expectations based on total PZT volume fraction, mesoporous CFO samples partially filled with PZT showed more change in out-of-plane magnetization than the sample with fully filled pores. This result suggests that residual porosity in the composite adds mechanical flexibility and results in greater magnetoelectric coupling.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 3
    Publication Date: 2014-09-05
    Description: Lattice dynamics and phase transition of MgO modified Pb 0.99 (Zr 0.95 Ti 0.05 ) 0.98 Nb 0.02 O 3 (PZTN- x wt. % MgO, x  = 0, 0.1, 0.2, 0.5) ceramics have been investigated by far-infrared (FIR) reflectance in the temperature range of 5.5–300 K and Raman spectra between 77 and 300 K, respectively. With the aid of above complementary methods, the structure of all ceramics was defined as low-temperature ferroelectric rhombohedral phase [ F R ( LT ) ] at room temperature. The FIR dielectric functions were extracted from the multi-Lorentz oscillator dispersion model. The lowest frequency phonon mode, which is related to Pb-BO 3 (B = Zr, Ti, Nb) vibration, mainly dominates the FIR dielectric response. With increasing MgO composition, the dielectric constants ε ( 0 ) at room temperature are estimated to 85.4, 73.4, 73.9, and 41.9, respectively. The decreasing trend can be due to the doubly ionized oxygen vacancies induced by Mg substitution for B-site. The order-disorder phase transition located around 120 K can be clearly clarified from temperature evolution of phonon frequency, damping, and intensity. It decreases slightly with increasing MgO composition, which influence the distortion due to the broken correlation chains and local permanent dipoles creation. Moreover, the transformation from antiferroelectric orthorhombic A O to [ F R ( LT ) ] phase has been observed around 250 K, which is associated with the antiferroelectric displacement of Pb atoms along 〈 110 〉 and coupled rotations of the corner-connected oxygen octahedral. Furthermore, the transition from [ F R ( LT ) ] to [ F R ( HT ) ] (high-temperature ferroelectric rhombohedral phase) was identified around 290 K for MgO-doped PZTN ceramics. It arises from the shift of cation (Pb and Zr/Ti/Nb/Mg ions) along the 〈 111 〉 direction and the transition temperature slightly decreases compared to the pure ceramic.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 4
    Publication Date: 2016-03-16
    Description: Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ∼40% higher (19.8  ±  1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3  ±  2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 5
    Publication Date: 2016-04-15
    Description: We demonstrate an analog O/E/O electronic link to allow integrated laser neurons to accept many distinguishable, high bandwidth input signals simultaneously. This device utilizes wavelength division multiplexing to achieve multi-channel fan-in, a photodetector to sum signals together, and a laser cavity to perform a nonlinear operation. Its speed outpaces accelerated-time neuromorphic electronics, and it represents a viable direction towards scalable networking approaches.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 56-59 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zn-doped GaSb epilayers grown on GaAs and GaSb substrates by low-pressure metal-organic chemical vapor deposition were studied. Triethylgallium and trimethylantimony were used as Ga and Sb sources, respectively. The carrier concentrations of p-type GaSb epilayers were affected by V/III ratio and growth temperature. Diethylzinc(DEZn) was used as the p-type dopant. The relationship between carrier concentration P and mole fraction [DEZn] is P=K[DEZn]2.3. Photoluminescence for different carrier concentration was compared. There exist two different regions for the carrier concentration versus growth temperature.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4358-4360 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Levitation forces between a small permanent magnet and a disk of bulk high-temperature superconductor at 77 K were measured as a function of vertical separation for disks of composition Y-Ba-Cu-O, Ag/Y-Ba-Cu-O, (Pb,Bi)-Sr-Ca-Cu-O, and Tl-Ba-Ca-Cu-O. The forces were highly hysteretic; however, for all samples, on the initial descent of the magnet toward the disk, the force was unique, independent of magnet speed, and varied approximately as the negative exponential of the separation distance. Magnetic stiffness, associated with minor hysteresis loops, was found to be approximately proportional to the levitation force, and nearly independent of magnet configuration and superconductor composition.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 397-399 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Levitation and rotation of cylindrical rare-earth magnets on yttrium-barium-copper-oxide superconducting bearings has been sustained at speeds of up to 120 000 rpm with a surface speed of 40 m/s. The decay of the free rotation rate has been measured at both atmospheric pressure and a partial vacuum to 2.6 μm Hg. The decay measurements in vacuum indicate that the flux drag torques are constant and independent of speed. The magnetic shear stress on the rotor magnet is estimated to be 150 dyn/cm2. It is believed that drag torques on rotating magnets are related to asymmetry in the flux density pattern of the magnet.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2308-2312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the oxygen dose on the microstructure and the dielectric properties of the buried oxide in oxygen implanted silicon-on-insulator (SOI) structures have been studied. Cross-sectional transmission electron microscopy analyses show that the density of oxygen precipitates at the silicon/buried-oxide interface increases with a decreasing oxygen dose when identical annealing processes are employed. Annealing studies reveal that 1275 °C anneals annihilate the oxygen precipitates. A longer annealing time is required to achieve an oxygen-precipitate-free silicon layer in an SOI substrate implanted with a lower oxygen dose. The inverse relationship between oxygen content in the silicon film and oxygen dose is attributed to the redistribution of oxygen during implantation. In the oxygen dose range studied, the thickness and the breakdown voltage of the buried oxide layer increase with increasing oxygen dose. Higher postimplant annealing temperature improves the isolation properties of the buried oxide layer.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1473-1477 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Au-Si interactions on the backside of 〈111〉 silicon wafers have been studied over the temperature range of 275–400 °C by transmission electron microscopy. The Au films annealed at temperatures below the Au-Si eutectic temperature (363 °C) all have similar structure—columnar Au grains of small size (∼450 A(ring)). An orthorhombic gold silicide, Au3Si, forms at the Au/Si interface below the eutectic temperature due to the migration of Au into the silicon substrate. The Au3Si grains are of much larger size (∼2000 A(ring)) than Au and contain twins. Annealing at 400 °C, which is above the eutectic temperature, results in a completely different structure. It consists of numerous small Si islands protruded and dispersed throughout a continuous, large grain (〉2.8 μm), polycrystalline gold film. Gold silicide was not observed at 400 °C. Many Au grains are found to grow epitaxially on the silicon substrate. The silicon islands are also found to grow epitaxially on silicon substrate. The structure after 400 °C annealing is interpreted as the result of the eutectic reaction between the substrate Si and the overlaying Au film.
    Type of Medium: Electronic Resource
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