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  • American Institute of Physics (AIP)  (2)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2275-2278 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This work describes a new experimental setup for end-fire coupling excitation of planar waveguides in the 300–10 K temperature range, which allows us to analyze their optical and spectroscopic properties through different techniques such as transmission, luminescence, or waveguide Raman spectroscopy. Two main novelties are relevant in this setup; (1) the use of long working distance microscope objectives, placed out of the cryostat, for both coupling and collecting guided light, and (2) the original set of mirrors, combined with different translation and rotation stages, which allows fine x,y,z,θ displacements of the beam focusing point preserving the laser beam alignment along the optical axis of the coupling objective. The setup has been tested in a series of Nd3+ doped ZBLA (ZrF4-BaF2-LaF3-AlF3) fluoride glass channel waveguides (from 2 to 40 μm width and 2 μm depth) obtained by ion-exchange and photolithography methods. The Nd3+ guided luminescence has been analyzed at low temperatures and compared to the spectra obtained for the bulk substrate. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3345-3349 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decay of infrared luminescence in Er3+-doped CaF2 layers grown by molecular beam epitaxy (MBE) on CaF2 substrates has been studied as a function of the Er3+ concentration in the 0.05–35 mol % range. Excitations at 800 nm, 980 nm, and 1.48 μm were used to obtain the decay of the 4I13/2→4I15/2 luminescence at 1.54 μm. The results have been compared with those reported for the Er3+ doped CaF2 bulk and correlated with the low temperature luminescence study of these layers in a back-scattering configuration. The 4I13/2 level lifetime was found to be almost constant (∼11 ms) for Er3+ concentrations up to 5 mol %. At higher concentrations, the lifetime decreases due to energy transfer, but remains longer than the lifetime measured in the bulk because of the different formation of aggregated centers induced by the MBE growth conditions. The strong increase of the luminescence intensity observed from 10 to 35 mol % Er3+ concentrations despite the decrease of the lifetime is discussed. Finally, end-fire coupling of a diode laser at 977 nm and propagation through 15 mm long waveguides have been observed for moderate Er3+ concentrations (6 mol %). Guided and side IR luminescence spectra have been obtained and contrasted. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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