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  • 1
    Electronic Resource
    Electronic Resource
    Superlattice-like structure for phase change optical recording (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3981-3987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to increase the crystallization speed and data transfer rate (DTR), a superlattice-like structure (SLL) was applied to the recording layer of phase change optical disks. Unlike the conventional phase change layer, the recording layer with the SLL structure consisted of alternating thin layers of two different phase change materials, i.e., GeTe and Sb2Te3. Although neither GeTe nor Sb2Te3 could be used as a phase change layer material for practical applications, present experimental results revealed that the phase change optical disk with the SLL structure demonstrated an excellent recording property that could meet practical recording requirements. X-ray photoelectron spectroscopy was employed to confirm that the SLL structure could be preserved after many times of melting and quenching. Dynamic properties of the optical recording disk with the SLL structure were investigated with a 1 T pulse duration of 8 ns and a constant linear velocity of 19 m/s. A clear eye pattern was observed. The carrier-to-noise ratio was about 58 dB and a DTR of 47 Mbit/s was achieved. The DTR would be as high as 140 Mbit/s if the blue light is used. It has been proven that the SLL structure is a useful means to increase the DTR of phase change optical recording disks. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454222
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  • 2
    Electronic Resource
    Electronic Resource
    The role of energetic electrons in self-oscillations of a discharge plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 5006-5012 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of energetic electrons in periodic self-oscillations of a discharge plasma has been studied by measuring the spatiotemporal evolution of plasma potential, electron density, and electron velocity distribution function. It is found that the self-oscillation involves the instabilities of sheaths, propagation of a double layer and competition between the ionization, thermalization, and diffusion. The energetic electrons are the key factor which links these processes to form the oscillation cycle. The time interval of each phase in the cycle is estimated according to the physical process and the calculations are in agreement with experimental measurements. The study of the probe perturbation effect on the oscillations indicates that the length of the oscillation period is related to the amount of energetic electrons; the more energetic electrons, the shorter the period. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406134
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetism in URhSi : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5221-5223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our neutron-powder-diffraction experiment revealed that URhSi crystallizes in the orthorhombic TiNiSi (space group Pnma) structure and orders ferromagnetically at low temperatures with the U magnetic moments of 0.11 μB aligned along the c axis. Anomalies in the temperature dependence of the magnetic susceptibility, specific heat and electrical resistivity indicate that URhSi orders below 9.5 K. The enhanced Cp/T value (extrapolated to 0 K) of 186 mJ/mol K2 can be partially reduced in magnetic fields, which indicates a considerable magnetic contribution even at very low temperatures. The ferromagnetic ground state is documented also by magnetization measurements at low temperatures. The high-field magnetization data obtained on oriented powder reveal a strong magnetocrystalline anisotropy. All the results obtained on polycrystalline samples classify URhSi as an itinerant 5f ferromagnet with very reduced U magnetic moments. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361347
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  • 4
    Electronic Resource
    Electronic Resource
    Optical spectroscopy of plasma produced by laser ablation of Ti alloy in air (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1783-1786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved emission spectrum from the plasma produced by 1.06 μm, 10 ns pulsed-laser irradiation of titanium alloy targets in air at a flux of 9.3×109 W cm−2 was analyzed in the wavelength range of 2000–8800 A(ring). From the evolutions of the specific spectrum lines of N II, Ti I, and Fe I, the velocities of N+ ions and the excited neutral Ti and Fe atoms have been obtained using a time-of-flight diagnostic method. The electron temperatures were deduced using the relative emission intensities of N II and Fe I isolated spectrum lines, and an electron number density was determined from the Stark-broadened line of the N II line at wavelength λ=3995 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362988
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic properties of U2Pt2Sn : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6361-6363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: U2Pt2Sn is crystallizing in an ordered version (space group P42/mnm) of the tetragonal U3Si2 type of structure. Clear anomalies in the magnetic susceptibility, specific heat, and electrical resistivity around 15 K indicate that U2Pt2Sn orders antiferromagnetically below this temperature. As expected for an antiferromagnet, the susceptibility and specific heat anomalies are shifted to lower temperatures upon application of external magnetic field. The specific-heat coefficient γ=327 mJ/mol f.u. K2 remains unchanged in fields up to 5 T. The antiferromagnetic ground state of U2Pt2Sn can be concluded also from the metamagnetic transition around 22 T in the magnetization at 4.2 K and from magnetic reflections in the neutron-diffraction pattern at low temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362000
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  • 6
    Electronic Resource
    Electronic Resource
    Cubic-phase GaN light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2498-2500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123019
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  • 7
    Electronic Resource
    Electronic Resource
    Mass-resolved two-photon spectra of ArXe in the region of Xe*(6p) (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 1213-1224 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: (2+1) resonantly enhanced multiphoton ionization (REMPI) spectra of ArXe have been recorded between ≈78 000 and 80 110.0 cm−1. Single isotopomer data was obtained using a time-of-flight (TOF) mass spectrometer. Vibrational analyses for several transitions involving ArXe excited states that dissociate to Ar(1S0)+Xe*(6p) are presented, in some instances, for the first time. In addition to vibrational numbering and constants, excited state symmetries were deduced from separate REMPI/TOF spectra recorded with linearly and circularly polarized light, while excited state bond lengths were derived from Franck–Condon factor calculations. Some of the excited states were found to have potential humps and/or unusual vibrational band intensity distributions. Where possible, the nature of the perturbations is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470781
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  • 8
    Electronic Resource
    Electronic Resource
    Contrast reversal of antiparallel domains in Cu-doped (Ba0.25Sr0.75)0.9(K0.5Na0.5)0.2Nb2O6 single crystal with synchrotron topography (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2649-2651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron-radiation topographic observations have shown that the Cu-doped (Ba0.25Sr0.75)0.9(K0.5Na0.5)0.2Nb2O6 crystal has a strong ferroelectric x-ray anomalous-scattering effect at the wavelength near the absorption edge of Ba atoms. The reversal of anomalous contrast of antiparallel domains in the crystal was directly revealed in the topographs of hkl and hkl¯ reflections. It was found that the domain walls are all polar and are formed to compensate the charges resulting from the inhomogeneous distributions of the metal atoms in the bulk crystal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113113
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  • 9
    Electronic Resource
    Electronic Resource
    Femtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1−xGex (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1507-1509 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-resolved, above-gap optical response of optically thick Si1−xGex alloys to carrier injection by a femtosecond pump pulse is measured across the entire compositional range (0≤x≤1) using a novel femtosecond ellipsometric technique which clearly distinguishes the real and imaginary parts of the time-varying dielectric function ε1(t)+iε2(t). The results are modeled microscopically in terms of the Drude contribution from a diffusing hot electron-hole plasma, augmented by transient-induced absorption from hot-carrier-induced band renormalization. Further corrections from thermal band-gap shrinkage, intervalley scattering, and transient interband absorption saturation are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109671
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  • 10
    Electronic Resource
    Electronic Resource
    In situ optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1376-1378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of disilane adsorption and hydrogen desorption during low-temperature, ultrahigh vacuum chemical vapor deposition on Si(001) is investigated in situ in real time by monitoring the instantaneous hydrogen coverage using optical second-harmonic generation. A simple two-site adsorption model and first-order desorption are used to establish a reactive sticking coefficient and to predict the Si(001) epitaxial growth rate. The reactive sticking coefficient is temperature independent between 740 and 920 K and equal to 0.04±0.01. Predicted growth rates are in agreement with published growth rates obtained from gas-source molecular-beam epitaxy of Si(001). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119927
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