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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4233-4236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of residual carbon has been studied for InP grown at low temperatures using TMIn and PH3 by low-pressure metalorganic chemical vapor deposition. n-type conduction is observed with electron concentrations as high as 1×1018 cm−3, and the electrical activation efficiency is 5%–15%. Carbon incorporation is found to be highly dependent on substrate temperature, suggesting that the rate-limiting step is desorption of CHy (0≤y≤3) from the surface during growth. Hydrogen is also incorporated in the layers during growth. The electron mobilities are lower for C-doped InP than for Si-doped InP. InP/InGaAs heterojunction bipolar transistors with C as the p-type base dopant and either Si or C as the n-type emitter dopant have been fabricated and compared. Devices with a carbon-doped base and emitter showed degraded performance, likely as a result of deep levels incorporated during growth of the emitter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356011
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of carbon-doped p-type InxGa1−xAs (0〈x≤0.53) by metalorganic chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2903-2905 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon doping of InxGa1−xAs grown on GaAs and InP substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using CCl4 has been investigated for In mole fractions as high as x=0.53. P-type conduction was obtained over the entire composition range studied, with hole concentrations above 1×1020 cm−3 for x〈0.12, and as high as 1×1019 cm−3 for In0.53Ga0.47As lattice-matched to InP. These high carbon concentrations were achieved by employing very low V/III ratios and low growth temperatures. The alloy composition was found to be dependent on several growth parameters, including CCl4 partial pressure, V/III ratio, and growth temperature. This may be due to surface reactions (etching) involving chlorine-containing compounds during growth. Samples grown at low temperature (∼500 °C) and lattice matched to InP exhibited an increase in hole concentration upon post-growth annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106814
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1248-1250 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degree of unintentional hydrogen passivation of acceptors in heavily C-doped GaAs (p(approximately-greater-than)1018 cm−3) grown by metalorganic chemical vapor deposition has been found to be a strong function of post-growth cool-down ambient. The carbon concentration in the GaAs and the amount of AsH3 in the cool-down ambient are the most important factors affecting passivation. Carbon acceptors can be reactivated by annealing in N2, then repassivated by heating and re-cooling in an AsH3/H2 or PH3/H2 ambient. Secondary ion mass spectrometry analysis shows that the hydrogen concentration is significantly higher in a C-doped GaAs surface layer which is exposed to the cool-down ambient than in a layer which is buried beneath n-type GaAs. This result is consistent with observations in n-p-n heterojunction bipolar transistor structures, where the fraction of C acceptors passivated in the base region is found to be less than in a single layer grown under identical conditions. Be-doped GaAs grown by gas-source molecular beam epitaxy has also been heated and cooled in AsH3-containing ambients, but no acceptor passivation is detectable by Hall effect measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108748
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