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  • 1
    Electronic Resource
    Electronic Resource
    Structure and photoluminescence of single AlGaAs/GaAs quantum dots grown in inverted tetrahedral pyramids (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2322-2324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arrays of single GaAs/AlGaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition in inverted tetrahedral pyramids on {111}B GaAs substrates are investigated. Cross-sectional atomic force microscopy images evidence a pronounced thickening of the GaAs quantum well layer at the tip of the pyramid, giving rise to a lens-like QD structure. Low-temperature photoluminescence and cathodoluminescence spectra show distinct luminescence from the dots, exhibiting filling of QD states separated by 33 meV at increased carrier densities. Luminescence linewidths of 15 meV and line energy variations of less than 5 meV are obtained across mm2 sample areas. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121810
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  • 2
    Electronic Resource
    Electronic Resource
    Carrier transport and luminescence in inverted-pyramid quantum structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3923-3925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence spectroscopy and wavelength-dispersive imaging were employed for investigating the carrier transport and recombination in GaAs/AlGaAs inverted-pyramid quantum dot (QD) heterostructures grown on patterned (111)B GaAs substrates. The spectra and images clearly evidence carrier recombination in quantum wells and quantum wires (QWR) and show potential variations in these structures. Luminescence from the lens-shaped QDs was identified and characterized as a function of the GaAs layer thickness. Furthermore, we show a tapering of the GaAs QWR that self-forms at the corners of the pyramids. Application of such tapered QWRs as "exciton accelerators" is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332099
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