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  • 1
    Electronic Resource
    Electronic Resource
    Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1737-1739 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cross-plane thermal conductivity of four Si/Si0.7Ge0.3 superlattices and three Si0.84Ge0.16/Si0.76Ge0.24 superlattices, with periods ranging from 45 to 300 and from 100 to 200 Å, respectively, were measured over a temperature range of 50 to 320 K. For the Si/Si0.7Ge0.3 superlattices, the thermal conductivity was found to decrease with a decrease in period thickness and, at a period thickness of 45 Å, it approached the alloy limit. For the Si0.84Ge0.16/Si0.76Ge0.24 samples, no dependence on period thickness was found and all the data collapsed to the alloy value, indicating the dominance of alloy scattering. This difference in thermal conductivity behavior between the two superlattices was attributed to interfacial acoustic impedance mismatch, which is much larger for Si/Si0.7Ge0.3 than for Si0.84Ge0.16/Si0.76Ge0.24. The thermal conductivity increased slightly up to about 200 K, but was relatively independent of temperature from 200 to 320 K. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455693
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular dynamics investigation of thickness effect on liquid films (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 5917-5923 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This work applies the molecular dynamics simulation method to study a Lennard-Jones liquid thin film suspended in the vapor and to explore the film thickness effect on its stability. For the accurate estimation of local pressure distributions in the film, an improved method is proposed and used. Simulation results indicate that profiles of the local surface tension distribution vary widely with film thickness, while surface tension values and density profiles show little variation. As the film gets thinner, the two liquid–vapor interfacial regions begin to overlap and liquid-phase molecules in the center region of the film experience larger tension in the direction parallel to the film surface. Such interface overlapping is believed to destabilize the film and the occurrence of film rupture depends on the system temperature and the cross-sectional area of the computational domain. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290698
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  • 3
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    Secondary electron imaging of monolayer materials inside a transmission electron microscope (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-08-13
    Description: A scanning transmission electron microscope equipped with a backscattered and secondary electron detector is shown capable to image graphene and hexagonal boron nitride monolayers. Secondary electron contrasts of the two lightest monolayer materials are clearly distinguished from the vacuum level. A signal difference between these two materials is attributed to electronic structure differences, which will influence the escape probabilities of the secondary electrons. Our results show that the secondary electron signal can be used to distinguish between the electronic structures of materials with atomic layer sensitivity, enhancing its applicability as a complementary signal in the analytical microscope.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
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    Quantum entanglement for helium atom in the Debye plasmas (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-03-25
    Description: In the present work, we present an investigation on quantum entanglement of the two-electron helium atom immersed in weakly coupled Debye plasmas, modeled by the Debye-Hückel, or screened Coulomb, potential to mimic the interaction between two charged particles inside the plasma. Quantum entanglement is related to correlation effects in a multi-particle system. In a bipartite system, a measurement made on one of the two entangled particles affects the outcome of the other particle, even if such two particles are far apart. Employing wave functions constructed with configuration interaction B-spline basis, we have quantified von Neumann entropy and linear entropy for a series of He 1,3 S e and 1,3 P o states in plasma-embedded helium atom.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-11-12
    Description: The microstructural evolution of UNCD films which are P-ion implanted and annealed at 600 °C (or 800 °C) is systematically investigated. The difference of interaction that the UNCD content undergoes along the trajectory of the incident P-ions is reflected in the alteration of the granular structure. In regions where the P-ions reside, the “interacting zone,” which is found at about 300 nm beneath the surface of the films, coalescence of diamond grains occurs inducing nano-graphitic clusters. The annealing at 600 °C (or 800 °C) heals the defects and, in some cases, forms interconnected graphitic filaments that result in the decrease in surface resistance. However, the annealing at 600 °C (800 °C) induces marked UNCD-to-Si layers interaction. This interaction due to the annealing processes hinders the electron transport across the interface and degrades the electron field emission properties of the UNCD films. These microstructural evolution processes very well account for the phenomenon elaborating that, in spite of enhanced conductivity of the UNCD films along the film's surface due to the P-ion implantation and annealing processes, the electron field emission properties for these UNCD films do not improve.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Electron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-04-22
    Description: We have explored the benefits of performing monochromated Electron Energy Loss Spectroscopy (EELS) in samples at cryogenic temperatures. As an example, we have observed the excitonic absorption peaks in single layer Transition Metal Dichalcogenides. These peaks appear separated by small energies due to spin orbit coupling. We have been able to distinguish the split for MoS 2 below 300 K and for MoSe 2 below 220 K. However, the distinction between peaks is only clear at 150 K. We have measured the change in absorption threshold between 150 K and 770 K for MoS 2 and MoSe 2 . We discuss the effect of carbon and ice contamination in EELS spectra. The increased spectral resolution available made possible with modern monochromators in electron microscopes will require the development of stable sample holders which reaches temperatures far below that of liquid nitrogen.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Influence of deposited energy on shock wave induced by underwater pulsed current discharge (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-10-14
    Description: In this paper, an integrated experimental system is established to study the influence of deposited energy on the intensity of the shock wave induced by underwater pulse discharge. Considering the time varying behavior of the arc, the calculation methods of the deposited energy into the plasma channel and the average arc resistance are proposed and presented. The effect of the breakdown process on the deposited energy and the shock wave is analyzed. It can be concluded that the shock wave intensity can be improved by depositing more energy in the first half oscillation period and increasing the arc resistance. It is also found that the energy deposition and the shock wave intensity are significantly influenced by the breakdown time delay and the shape of the initial plasma channel.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Gentle transfer method for water- and acid/alkali-sensitive 2D materials for (S)TEM study (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-11-22
    Description: We report a method in making transmission electron microscopy sample for both CVD-grown and exfoliated 2D materials without etching process, thus gentle to those 2D materials that are sensitive to water and reactive etchants. Large-scale WS 2 monolayer grown on glass, NbS 2 atomic layers grown on exfoliated h-BN flakes, and water-sensitive exfoliated TiS 2 flakes are given as representative examples. We show that the as-transferred samples not only retain excellent structural integrity down to atomic scale but also have little oxidations, presumably due to the minimum contact with water/etchants. This method paves the way for atomic scale structural and chemical investigations in sensitive 2D materials.
    Electronic ISSN: 2166-532X
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by American Institute of Physics (AIP)
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