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  • 1
    Electronic Resource
    Electronic Resource
    Density relaxation of silicon dioxide on (100) silicon during thermal annealing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the refractive index of thermally grown oxide after annealing reveal that the density relaxation of the oxide is well described by a stretched exponential decay function. The experiments of two-step oxidation show that oxygen diffusivity in the oxide exponentially decreases with the oxide density. The relation between the oxide density and the refractive index is well expressed by a simple power relation rather than the Lorenz–Lorenz formula.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345563
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Nonplanar silicon oxidation in dry O2+NF3 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 280-282 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonplanar silicon oxidation in a dry O2+NF3 gas mixture has been investigated. Oxide morphologies at silicon corners following 800 °C oxidation in dry O2 and in dry O2+NF3 gas are observed using a scanning electron microscope. While a serious decrease in oxide thickness at convex silicon corners is observed following oxidation in dry O2, no inhibition of oxide growth occurs and the Si/SiO2 interface is smoothly rounded off at the corners following oxidation in dry O2+NF3. The effects of adding NF3 gas to a dry O2 atmosphere on nonplanar oxidation are discussed. Furthermore, a sacrificial oxidation in dry O2+NF3 prior to forming the thin capacitor oxide is found to be very effective for reducing the oxide leakage current for a trenched capacitor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102808
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  • 3
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    Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-09-30
    Description: Potential variations around the grain boundaries (GBs) in antimony (Sb)-doped n-type and boron (B)-doped p-type BaSi 2 epitaxial films on Si(111) were evaluated by Kelvin probe force microscopy. Sb-doped n-BaSi 2 films exhibited positively charged GBs with a downward band bending at the GBs. The average barrier height for holes was approximately 10 meV for an electron concentration n ≈ 10 17  cm −3 . This downward band bending changed to upward band bending when n was increased to n  = 1.8 × 10 18  cm −3 . In the B-doped p-BaSi 2 films, the upward band bending was observed for a hole concentration p ≈ 10 18  cm −3 . The average barrier height for electrons decreased from approximately 25 to 15 meV when p was increased from p  = 2.7 × 10 18 to p  = 4.0 × 10 18  cm −3 . These results are explained under the assumption that the position of the Fermi level E f at GBs depends on the degree of occupancy of defect states at the GBs, while E f approached the bottom of the conduction band or the top of the valence band in the BaSi 2 grain interiors with increasing impurity concentrations. In both cases, such small barrier heights may not deteriorate the carrier transport properties. The electronic structures of impurity-doped BaSi 2 are also discussed using first-principles pseudopotential method to discuss the insertion sites of impurity atoms and clarify the reason for the observed n-type conduction in the Sb-doped BaSi 2 and p-type conduction in the B-doped BaSi 2 .
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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