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  • 1
    Electronic Resource
    Electronic Resource
    Magneto-optical spectra of epitaxial ferromagnetic MnAs films grown on Si and GaAs substrates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6791-6793 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied magnetic circular dichroism (MCD) spectra of ferromagnetic MnAs epitaxial thin films of (1¯101), (1¯100), and (0001) crystallographic growth orientations. The films were grown on Si(001), Si(111), GaAs(001), and GaAs(111)B substrates by molecular-beam epitaxy. We have found strong crystal orientation dependence of MCD spectra of MnAs films in terms of characteristic features and absolute intensity of MCD signals. We have also measured temperature dependence of MCD spectra on a (0001) MnAs film. Features at low temperatures are found to be different from those at room temperature. Our experimental results are compared with the ionic model for the electronic structure of NiAs-type MnAs and with magneto-optical Kerr ellipticity spectra recently calculated using an all electron full potential linear muffin-tin orbital method. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372843
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  • 2
    Electronic Resource
    Electronic Resource
    Transport properties of Mn δ-doped GaAs and the effect of selective doping (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3120-3122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown Mn δ-doped GaAs layers on GaAs(001) substrates by molecular beam epitaxy. Secondary ion mass spectroscopy and transmission electron microscopy revealed that Mn dopants were abruptly confined. The doping profiles still retained abruptness even at elevated growth temperature up to 400 °C. Mn δ-doped GaAs samples showed high resistivity at low temperature and did not show a ferromagnetic behavior. However, in a selectively doped heterostructure (Mn δ-doped GaAs / Be-doped AlGaAs), where holes were supplied from the Be-doped AlGaAs layer, a ferromagnetic order was observed with the ferromagnetic transition temperature as high as 70 K. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1473878
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