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  • 11
    Electronic Resource
    Electronic Resource
    Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2135-2137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron transistor has been fabricated by an optical fabrication method. A small dot, a source and drain reservoir, and in-plane gates are all built from the two-dimensional electron gas of an n-type GaAs/AlGaAs heterostructure. Laser-written p-doped lines are used to define this dot with a diameter of about 70 nm and to insulate it from the in-plane gates. Tunnel junctions connect the dot with source and drain. The in-plane gates are used to tune the tunnel junctions and to change the electrostatic potential of the dot. A large charging energy of 5 meV and clear Coulomb-blockade oscillations are observed at helium temperature, due to a small dot capacitance of about 3×10−17 F. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118969
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  • 12
    Electronic Resource
    Electronic Resource
    Mg implant activation and diffusion in GaAs during rapid thermal annealing in arsine ambient (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2857-2861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing of GaAs in an arsine ambient has been investigated. Uncapped 2-in. GaAs wafers were annealed in an arsine-N2 gas mixture up to annealing temperatures of 1100 °C and annealing times of 10 s. No surface decomposition occurred at an arsine partial pressure of 12.5 Torr. This capless annealing technique was employed to the activation of shallow Mg implants in GaAs. The sheet resistance of the annealed layers as a function of the annealing temperature reveals a minimum at approximately 930 °C. At higher temperatures diffusion of Mg becomes significant. A part of the Mg accumulates at the GaAs surface and diffuses out. The Mg loss due to outdiffusion can be reduced using Si3 N4 cap layers. The internal diffusion of Mg at high temperatures depends on the arsenic pressure during the annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345456
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