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  • 11
    Electronic Resource
    Electronic Resource
    Polarization switching and bistability in an external cavity laser with a polarization-sensitive saturable absorber (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2214-2216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization switching and hysteresis are observed in a semiconductor laser with a two-armed polarization-sensitive external cavity. An intracavity polarization-dependent saturable absorber is placed asymmetrically in one of the two arms of the external cavity so that one polarization mode is saturated more strongly than the other. The observed phenomena can be explained by the complementary processes of competition in the gain region and the polarization-dependent saturable loss in the external cavity. This mechanism is potentially useful as the basis of a two-mode switchable and bistable diode laser for applications as high-speed optical memories and logic gates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104930
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  • 12
    Electronic Resource
    Electronic Resource
    Ultrafast dynamics of holes in GaAs probed by two-color femtosecond spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast relaxation dynamics of light and heavy holes in GaAs following femtosecond valence-to-conduction-band excitation are measured by probing the light- and heavy-to-split-off hole transitions at different midinfrared wavelengths using the recently developed broadly tunable femtosecond optical parametric oscillator. The initial relaxation times are less than 75 fs, and a spectral hole-burning effect is seen. The results suggest that carrier–carrier and optical-phonon scattering, in particular, polar optical-phonon scattering, are the primary processes leading to the initial redistribution of heavy and light holes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121724
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  • 13
    Electronic Resource
    Electronic Resource
    Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 152-154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A bilayer is used as an electrode for organic electroluminescent devices. The bilayer consists of an ultrathin LiF layer adjacent to an electron-transporting layer and an aluminum outerlayer. Devices with the bilayer electrode showed enhanced electron injection and high electroluminescence efficiency as compared with a Mg0.9Ag0.1 cathode. Similar effects were observed when replacing MgO for LiF. The improvements are attributed to band bending of the organic layer in contact with the dielectrics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118344
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  • 14
    Electronic Resource
    Electronic Resource
    Measurements of noncritically phase-matched second-harmonic generation in a LiB3O5 crystal (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 980-982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristic properties of noncritically phase-matched second-harmonic generation in lithium triborate (LiB3O5, LBO) are investigated. Using a LBO crystal grown in our laboratory, we demonstrate that temperature-tuned noncrictical phase-matched second-harmonic generation from 1.025 to 1.253 μm is achieved in a temperature range from 190 to −3 °C. The noncritical phase-matching temperature for 1.064 μm radiation is found to be 148.0±0.5 °C with a temperature acceptance bandwidth of 3.9 °C cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104275
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  • 15
    Electronic Resource
    Electronic Resource
    Type II phase matching in a β-barium borate optical parametric oscillator (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1819-1821 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first demonstration of a type II phase-matched optical parametric oscillator using β-barium borate (BBO) as the nonlinear optical material. The optical parametric oscillator (OPO) is pumped at 354.7 nm and tuning has been demonstrated over 0.48–0.63 μm and 0.81–1.36 μm. The linewidth of the device, without line narrowing elements, is 0.5–3.0 A(ring), which is dramatically narrower than that of a corresponding type I phase-matched BBO OPO. Experimentally usable conversion efficiencies of 12% have been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103080
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  • 16
    Electronic Resource
    Electronic Resource
    Linear electro-optic effect in barium metaborate (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1288-1290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first measurement of the linear electro-optic coefficients of crystalline barium metaborate. The largest electro-optic coefficient r22 was found to be 2.5 pm/V, about four times smaller than the r63 of potassium dihydrogen phosphate (KDP). The dispersion of the electro-optic coefficient was also measured and found to be in excellent agreement with predicted values using the anharmonic oscillator model. Implications of the result on the point group symmetry of barium metaborate are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99680
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  • 17
    Electronic Resource
    Electronic Resource
    Experimental determination of hot-carrier scattering processes in AlxGa1−xAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 605-607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial relaxation of hot electrons in Al0.35Ga0.65As has been measured using optical transmission-correlation spectroscopy. In order to determine the contributions of distinct scattering processes, the kinetic energy of the photoexcited carriers was varied by temperature tuning the band gap of the material. We obtain the rates of intervalley scattering, carrier-carrier scattering, and polar phonon emission from the measured decays. When scattering to the satellite (L and X) valleys is energetically possible, this process dominates the relaxation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98361
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  • 18
    Electronic Resource
    Electronic Resource
    Semiconductor laser logic gate suitable for monolithic integration (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1780-1782 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new semiconductor laser optical logic gate based on quenching and capable of performing the not, nor, and nand functions is described. The device can be operated both pulsed and cw at room temperature. In addition, the new logic gate can be monolithically integrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98520
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  • 19
    Electronic Resource
    Electronic Resource
    Birefringence-induced polarization counter rotation in a semiconductor laser (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1487-1489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a birefringence in a semiconductor laser are reported. We demonstrate Nπ (where N is an odd integer) phase retardation between the TE and TM modes in the laser output beam resulting in the phenomenon of counter rotation of the output polarization. A numerical value for the birefringence is estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98663
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  • 20
    Electronic Resource
    Electronic Resource
    Bistability in two-mode semiconductor lasers via gain saturation (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1392-1394 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions required to achieve bistability in two-mode semiconductor lasers via the nonlinearity associated with gain saturation are discussed. The laser can be switched between the bistable states through coherent or incoherent optical control. Wavelength bistability in such a laser is demonstrated experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98686
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