ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 6964-6966 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Phase transitions in the layer structured (C18H37NH3)2SnCl6 were studied using 1H NMR. The spin-lattice relaxation rate reflects the critical slowing down around the order–disorder phase transition temperature, and is compatible with the three-dimensional Ising model. A critical slowing down is also observed at the conformational transition in the second moment measurement, presumably for the first time. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3808-3815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of replacing Pt in the Ti/Pt/Au base and traditionally used metallurgical structure by Ni, while bonding InP laser chip to a submount with AuSn (80% Au) solder, has been investigated. Various Ni-based metal alloys have been prepared by evaporation. Reflow experiments were conducted in a chamber under forming gas-controlled ambient. The Ti/Ni/AuSn system provided much longer surface local freezing duration compared to the Ti/Pt/AuSn system. Scanning electron microscopy analysis revealed a smoother surface morphology for the Ti/Ni/AuSn system after the metal refroze. Auger electron spectroscopy depth profiles indicated the formation of a Ni-Sn-Au interacted layer. The interaction took place in two steps: the first stage was the dissolution of Ni into the Au-Sn liquid followed by precipitation of a Ni-Sn-Au intermetallic compound; the second stage was a solid-state interdiffusion of Sn, Au, and Ni which occured in the interacted layer and in the original Ni layer. The latter step was a diffusion-controlled process, resulting in a very slow growth rate. Both Au and Sn reacted to form Ni alloy layers of almost equal thickness, regardless of the reaction duration (up to about 5 min). This intensive reaction, however, did not lead to full consumption of the Ti interfacial layer, which provided an excellent adhesion layer between the submount and the metallurgical structure.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1378-1385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we report a high-performance ultrathin oxide (≈80 A(ring)) prepared by a low-temperature wafer loading and N2 preannealing before oxidation. This recipe can reduce native oxide thickness and thermal stress compared to the conventional oxidation recipe. The high-resolution transmission electron microscopy reveals that the SiO2/Si interface is atomically flat, and a thin crystalline-like oxide layer about 7 A(ring) exists at the interface. Oxides prepared by the proposed recipe show a very high dielectric breakdown field (≥16 MV/cm) and a very low interface state density (Nit ≈ 3 × 109 eV−1 cm−2 at midgap). The effective barrier height at cathode derived from the slopes of log(Jg/E2ox) vs 1/Eox and tbd vs 1/Eox plots is about 3.9 eV, instead of 3.2 eV for the control sample. It also shows a better immunity to the charge trapping and interface state generation under high-field stressing, and superior time-dependent dielectric breakdown characteristics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2309-2312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of photoluminescence from the Mg-doped In0.5Ga0.5P layers on (100) GaAs substrates grown by liquid-phase epitaxy has been studied. At low temperature, the spectra show only two major emission peaks involving intrinsic recombination and conduction–band-to-acceptor transition. The intrinsic recombination dominates in the doping concentration range studied (1.0×1017–7.0×1018 cm−3) above 60 K. Below 50 K, these two peaks merged with each other when the doping concentration is higher than 1×1018 cm−3. The temperature dependence of band gap in In0.5Ga0.5P layers determined from the photoluminescence peak energy varies as 1.976 − [7.5 ×10−4 T2/(T + 500)] eV. For the moderately doped concentration (p 〈 1.4 × 1018 cm−3), the Mg acceptor ionization energy obtained from 50-K photoluminescent spectra is in the range from 37 to 40 meV.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1398-1402 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs/GaAs heterostructure emitter bipolar transistors were grown with emitter thicknesses varied from 300 to 900 A(ring) and the emitter thickness effects on the current gain and offset voltage were studied. It was found that both the current gain and offset voltage are strongly dependent on the emitter thickness. The current gain decreases with increasing emitter thickness. For an emitter thickness smaller than 500 A(ring), the offset voltage decreases with increasing emitter thickness, but for an emitter thickness larger than 500 A(ring), the offset voltage stays at a nearly constant value. Offset voltage as low as 55 mV was obtained for an emitter thickness of 700 A(ring). This low offset voltage, mostly contributed by the geometric effect, indicates that the base-emitter junction is a homojunction. From the current gain and offset voltage considerations, the optimal emitter thickness was found to be about 300–500 A(ring).
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4165-4170 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The streaming induced in a short vertical liquid column (L/R≤1, L: length, R: radius) by the vibration of one of the supporting end walls has been utilized in this novel study. Vibration essentially drives a surface flow in the zone away from the vibrating wall, with the return flow in the bulk towards the wall. Preliminary measurements of the surface streaming velocity show that it increases with the frequency and amplitude of vibration and the zone length, and decreases with the viscosity of the zone liquid. This controlled surface streaming has been employed to balance an opposing, steady thermocapillary flow in a model half-zone of silicone oil. In addition to the evidence gathered through flow visualization, temperature measurements in the zone reveal that the radial temperature gradients set up by the thermocapillary flow are weakened/offset by this balancing.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2449-2452 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of a thin protective but subsequently evaporated InAs layer on the regrowth of AlGaAs has been studied. It was found that although most of the InAs could be evaporated by thermal desorption, some would react with Al0.36Ga0.64As to form InAlGaAs. These InAlGaAs islands act as potential wells for carrier recombination and dominate the photoluminescence spectrum. Transmission electron microscopy photographs show that dislocations are formed near the islands. These defects are caused by lattice mismatch between AlGaAs and InAlGaAs. These islands and defects strongly affect the optical quality of surrounding Al0.36Ga0.64As and quantum wells.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1468-1472 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz–Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3639-3641 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a new type of infrared detector, the magnetic susceptibility bolometer, based on the temperature dependence of the diamagnetic screening of a high transition-temperature (Tc) superconductor film near Tc. Results are reported for the response of a prototype model to modulated blackbody radiation. We discuss possible improvements and the potential sensitivity of an improved device.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1122-1123 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...