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  • Blackwell Publishing Ltd  (15)
  • American Institute of Physics (AIP)  (14)
  • Blackwell Science Inc  (4)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1844-1846 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The susceptibility to hole trapping of the gate oxide of a metal-oxide-silicon (MOS) device is not necessarily proportional to the efficiency of interface trap generation at the Si-SiO2 interface, which is widely believed due to the recombination of electrons and trapped holes in the oxide close to the interface. In this study, an oxide given a high-temperature (1000 °C) anneal, which increases the hole trapping efficiency of the oxide, is shown to have much less generated interface traps compared to a normal oxide (without high-temperature annealing) upon exposing to ionizing radiation with subsequent electron injection, or high-field injection alone. Under high-field tunneling injection, the electron fluence required to create a certain density of interface trap is an order of magnitude higher for the annealed oxide compared to the normal oxide. These results could provide a possible direction for improving the reliability of the gate oxide of a MOS field-effect transistor.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 607-609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-intensity quartz-halogen tungsten lamps were used to form platinum silicide films. Platinum films of 42 and 52 nm were evaporated on single-crystal silicon and subsequently processed in a roughing vacuum from 5 up to 20 sec. The electrical characteristics and the microstructure of the silicide films were studied by four-point probe measurements, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The silicide formation started within the first few seconds, and the reaction was essentially completed after 10 sec. The dominant phase was PtSi, while only a small amount of Pt2Si was detected in the 5- and 10-sec processed samples. The presence of oxygen and carbon in the film and processing ambient did not prevent the rapid silicide formation, although it gave rise to a surface layer composed of silicon oxide and other contaminants.
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 22 (2004), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: As the best preserved high- and ultrahigh-pressure (HP and UHP) metamorphic terrane in the Qinling-Dabieshan-Sulu orogen, western Dabieshan is divided into six lithotectonic units along a traverse across the orogen, i.e. from north to south, the Nanwan, Balifan, Huwan, Xinxian, Hong'an and Mulanshan units. In this terrane five eclogite-bearing zones (I–V) are developed. The garnet and clinopyroxene in eclogites from these zones exhibit chemical zoning, suggesting that the rims record general peak temperature and pressure. Thermobarometric study indicates that the peak P–T conditions of eclogite are 550–570°C and 21 kbar for Zone I, 470–500°C and 14–17 kbar for Zone II, 620–670°C and 26–29 kbar for Zone III, 530–560°C and 20–22 kbar for Zone IV, and 490–510°C and 19–20 kbar for Zone V. The symmetrical thermobaric pattern, in conjunction with structural and geochronological data, demonstrates that the Huwan and Hong'an units belong to the same HP slice overlying the UHP slice. This pattern, together with the Mulanshan LT/HP blueschist–greenschist belt in the south, roughly constitutes a ‘normal’ metamorphic zonation. However, clear metamorphic gaps occur between different slices. It is inferred that the LT/HP, HP and UHP slices were broken up from the downgoing slab during subduction and reached different depths along different geothermal gradients. The successive subduction of underlying slices leads to a nearly concomitant uplift of overlying slices, whereas exhumation of the deepest UHP slice was effected by underthrusting of the lower crust of the Yangtze craton.
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  • 4
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Eclogites from the south Tianshan, NW China are grouped into two types: glaucophane and hornblende eclogites, composed, respectively, of garnet + omphacite + glaucophane + paragonite + epidote + quartz and garnet + omphacite + hornblende (sensu lato) + paragonite + epidote + quartz, plus accessory rutile and ilmenite. These eclogites are diverse both in mineral composition and texture not only between the two types but also among the different selected samples within the glaucophane eclogite. Using thermocalc 3.1 and recent models of activity–composition relation for minerals, a P–T projection and a series of P–T pseudosections for specific samples of eclogite have been calculated in the system Na2O–CaO–FeO–MgO–Al2O3–SiO2–H2O (NCFMASH) with quartz and water taken to be in excess. On the basis of these phase diagrams, the phase relations and P–T conditions are well delineated. The three selected samples of glaucophane eclogite AK05, AK11 and AK17 are estimated to have peak P–T conditions, respectively, of 540–550 °C at c. 16 kbar, c. 560 °C at 15–17 kbar and c. 580 °C at 15–19 kbar, and two samples of hornblende eclogite AK10 and AK30 of 610–630 °C and 17–18 kbar. Together with H2O-content contours in the related P–T pseudosections and textural relations, both types of eclogite are inferred to show clockwise P–T paths, with the hornblende eclogite being transformed from the glaucophane eclogite assemblage dominantly through increasing temperature.
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  • 5
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: The solid-state reaction magnesite (MgCO3) + calcite (aragonite) (CaCO3) = dolomite (CaMg(CO3)2) has been identified in metapelites from western Tianshan, China. Petrological studies show that two metamorphic stages are recorded in the metapelites: (1) the peak mineral assemblage of magnesite and calcite pseudomorphs after aragonite which is only preserved as inclusions within dolomite; and (2) the retrograde glaucophane-chloritoid facies mineral assemblage of glaucophane, chloritoid, dolomite, garnet, paragonite, chlorite and quartz. The peak metamorphic temperatures and pressures are calculated to be 560–600 °C, 4.95–5.07 GPa based on the calcite–dolomite geothermometer and the equilibrium calculation of the reaction dolomite = magnesite + aragonite, respectively. These give direct evidence in UHP metamorphic rocks from Tianshan, China, that carbonate sediments were subducted to greater than 150 km depth. This UHP metamorphism represents a geotherm lower than any previously estimated for subduction metamorphism (〈 3.7 °C km−1) and is within what was previously considered a ‘forbidden’ condition within Earth. In terms of the carbon cycle, this demonstrates that carbonate sediments can be subducted to at least 150 km depth without releasing significant CO2 to the overlying mantle wedge.
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 22 (2004), S. 0 
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Petrogenetic grids in the KFMASH and KMnFMASH model systems calculated with the software thermocalc 3.1 are presented for the P–T range 0.5–12 kbar and 450–900 °C, for assemblages involving garnet, muscovite, chloritoid, biotite, chlorite, staurolite, cordierite, spinel, orthopyroxene, K-feldspar, Al2SiO5 phases, quartz, water and melt. Based on calculated compatibility diagrams and P–T and T–MMn [Mn/(Mg + Fe + Mn)] pseudosections for different metapelitic bulk compositions, the principal conclusions are that the addition of Mn to the KFMASH system: (i) enhances the stability of garnet, and, to a lesser extent, aluminosilicates; (ii) reduces the stability of staurolite, cordierite and, to a lesser extent, chlorite; and (iii) extends the medium pressure stability of muscovite and the low-P stability field of K-feldspar. The influence of Mn on individual mineral stabilities is strongly related to rock composition, in particular, to the relative contents of Al2O3 and K2O. For metapelites of a range of compositions and MMn values, P–T pseudosections in the KFMASH system, in most cases, do not adequately predict the mineral assemblages observed in natural assemblages under medium and low-pressure conditions. In contrast, the P–T pseudosections in the KMnFMASH system generally provide more satisfactory results, suggesting that MnO is one of the non-KFMASH components that should not be neglected in documenting the phase equilibria of medium- and low-P metapelites.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4145-4153 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: All four possible chemical reactivity patterns, namely, outdiffusion of Te (metal-Cd alloy formation), Cd outdiffusion (metal telluride compound formation), comparable chemical reactivity of the metal towards both Cd and Te (no Cd or Te outdiffusion), and chemical inertness of the metal towards CdTe, were differentiated via the differential scanning calorimetry (DSC) technique from a study of the interaction of nine different metals toward CdTe powder. The fusion signatures of free Cd or Te, exotherms due to compound or alloy formation, along with the thermal transitions of the metal telluride and/or the intermetallic were used for this purpose. These reactivity patterns are discussed within the framework of two different thermodynamic models. Both virgin and chemically etched CdTe surfaces were examined, and found to exhibit rather different reactivity trends towards the metal. The ramifications of these results in terms of the electronic properties of metal/CdTe contacts are discussed. Finally, DSC is shown to be useful for probing alterations in the CdTe surface chemistry as a result of the etch treatment.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1329-1330 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization curves of a DyBa2Cu3Oy crystal prepared by the melt-textured growth method were measured from 10 to 85 K with the magnetic field parallel to the c axis. The scaling behavior of the virgin magnetization curves is observed and explained in terms of an extended Bean model.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1429-1434 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of tungsten silicides have been formed on samples of W(50 nm)/Ti(5 or 10 nm)/Si〈100〉 by rapid-thermal annealing. The results of the experiments show that by interposing a thin layer of Ti at the W-Si〈100〉 interface, the temperature at which WSi2 is first detected is lowered to 570–600 °C, and the W-Si reaction rate is increased, as compared to the W/Si〈100〉 samples. The resulting WSi2 film has an electrical resistivity of about 115 μΩ cm with a smooth surface. Neither the W-rich silicide phase, W5Si3, nor the hexagonal WSi2 phase is found in the annealed samples. The growth kinetics are monitored using a four-point probe, x-ray diffraction, scanning electron microscopy, and scanning Auger analysis.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4200-4206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High intensity quartz-halogen tungsten lamps with power densities of 10, 15, and 25 W/cm2 were used to form palladium silicide films. Metal films of 83–200 nm were evaporated on (100)-oriented single-crystal silicon and subsequently processed in vacuum for time intervals from 5 to 60 s. The electrical characteristics and the microstructure of the silicide films were studied by four-point probe, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and Rutherford backscattering spectroscopy. A nonuniform PdSi film with dendritelike surface topography is formed at 25 W/cm2. A somewhat discontinuous low resistance film of predominantly PdSi is formed at 15 W/cm2. The same power density, for contaminated samples, induces agglomeration upon processing. A uniform Pd2Si film with a resistivity of 27 μΩ cm is obtained at 10 W/cm2. Longer processing times result in nucleation and growth of PdSi from Pd2Si.
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