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  • American Institute of Physics (AIP)  (21)
  • American Physical Society (APS)  (6)
  • Inter-Research  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Probing of flowing electron plasmas (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 4651-4658 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Probing of streaming electron plasmas with finite temperature is studied. For the first time, a current-voltage characteristic of an electric probe is measured in electron plasmas. Due to the fast flow of the electron plasmas, the characteristic curve spreads out significantly and exhibits a long tail. This feature can be explained calculating the currents collected to the probe. In flowing electron plasmas, the distribution function observed in the laboratory frame is non-Maxwellian even if the plasmas come to a state of thermal equilibrium. Another significant feature of the characteristic is that it determines a floating potential where the current equals zero, despite there being very few ions in the electron plasma. A high impedance probe, which is popularly used to determine the space potential of electron plasmas, outputs the potential. The method is available only for plasmas with density much smaller than the Brillouin limit. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1395568
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  • 2
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of ZnO-based diluted magnetic semiconductors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7284-7286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic circular dichroism (MCD) spectra of Zn1−xTMxO (TM=Sc, Ti, V, Cr, Mn, Co, Ni, and Cu) films were measured to clarify their magneto-optical properties. Noticeable magneto-optical effect was not observed for Zn1−xScxO, Zn1−xTixO, Zn1−xVxO, and Zn1−xCrxO. On the contrary, Zn1−xMnxO, Zn1−xCoxO, Zn1−xNixO, and Zn1−xCuxO showed pronounced negative MCD peaks near 3.4 eV which correspond to the band gap of the host ZnO semiconductor. These results show that ZnO alloyed with Mn, Co, Ni, and Cu is a diluted magnetic semiconductor with strong exchange interaction between sp-band carriers and localized d electrons. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356035
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  • 3
    Electronic Resource
    Electronic Resource
    Direct observation of optical anisotropy in a GaAs/AlAs quantum well wire array (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2969-2971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using reflectance difference spectroscopy and transmittance difference spectroscopy, optical anisotropy in a quantum well wire array is directly observed at room temperature. The quantum wire array is a fractional-layer superlattice grown by metalorganic chemical vapor deposition on a vicinal (001)GaAs substrate. The size for quantum confinement of the wires is nominally 4×4 nm. Polarization dependence of optical absorption and refractive index is clearly observed between the directions parallel and perpendicular to the wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104711
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  • 4
    Electronic Resource
    Electronic Resource
    Impurity-induced disordering in fractional-layer growth on a (001) vicinal surface by metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 87-88 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (AlAs)1/2(GaAs)1/2 fractional-layer superlattices (FLSs) are grown on a (001) GaAs substrate, tilted slightly in the [1¯10] direction using metalorganic chemical vapor deposition. The periodic structures are analyzed by x-ray superlattice satellite diffraction. The results suggest that the step flow mode from monolayer step is a dominant crystal growth process. However, the satellite intensities drastically decrease under heavy Si impurity doping conditions (n〉2×1017 cm−3), showing that impurity-induced disordering occurs during fractional-layer growth. The growth mechanism under impurity doping conditions is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102661
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic and transport properties of III–V diluted magnetic semiconductor Ga1−xCrxAs (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7392-7394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic and transport properties of Cr-based III–V diluted magnetic semiconductor Ga1−xCrxAs Cr concentrations up to x=0.10 have been investigated. For all the films, no long-range magnetic order was observed down to 2 K. A sign of paramagnetic Curie temperature is positive, indicating that the dominant magnetic interaction between Cr atoms is ferromagnetic. The effective number of Bohr magneton is estimated to be 5.1±0.4, which is close to that of Cr2+ ion. The magnetization curve shows superparamagnetic behavior at low temperatures. The radius of the local spin order in x=0.034 is estimated to be 1.5–2.0 nm at T=5 K and it decreases with increasing temperature. From Hall effect measurements at room temperature, the magnitude of mobility is estimated to be less than 0.5 cm2/V s. This low mobility strongly suggests that the hopping conductivity is dominant in Ga1−xCrxAs films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359475
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of metastable compounds and magnetic properties in rapidly quenched (Fe1−x Cox)5Sm and (Fe1−xCox)7Sm2 alloy systems (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5974-5976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of metastable (TM)5Sm and (TM)7Sm2 (TM=Fe-Co) compounds and their magnetic properties have been investigatyed by the x-ray diffraction method and analysis of thermomagnetization curves for rapidly quenched (Fe1−x Cox)5Sm and (Fe1−x Cox)7Sm2 (0≤x≤1.0) alloys. The (Fe1−x Cox)5Sm compound is formed with a single phase in the range 0.7≤x≤1.0 and a mixture with other stable compounds in other composition range. On the other hand, the metastable (TM)7Sm2 compound exists in the mixed state with a large amount of (TM)3Sm stable compound in the range 0.7≤x≤1.0. The single phase (RM)5Sm compound exhibits a huge coercivity of 5–14 kOe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342167
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties and structure change from tetragonal to hexagonal for the rapidly quenched SmTiFe11 alloy ribbons (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5965-5967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structure and magnetic properties of the rapidly quenched SmTiFe11 alloy ribbons fabricated under various quenching rates were systematically examined. Phase transformation from an equilibrium ThMn12-type structure (tetragonal) to a metastable TbCu7-type disordered structure (hexagonal) was found for the ribbons fabricated around the roll velocity, VR(approximately-equal-to)30 m/s. Magnetocrystalline anisotropy changed from uniaxial (Ku1=5.0×107 erg/cm3) to in-plane anistropy in accordance with the structure change from ThMn12- to TbCu7-type structure. Ms and Tc varied from 125 emu/g and 320 °C (ThMn12 type) to 114 emu/g and 242 °C (TbCu7 type), respectively. The maximum hard magnetic properties for SmTiFe11 alloy ribbons, iHc=3 kOe, (BH)max=3 MGOe, were obtained for the ribbons with a ThMn12-type structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342164
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  • 8
    Electronic Resource
    Electronic Resource
    Polarization properties of a vertical cavity surface emitting laser using a fractional layer superlattice gain medium (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3082-3084 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the polarization properties of a vertical cavity surface emitting laser that uses an (Al0.5Ga0.5As)1/2(GaAs)1/2 fractional-layer superlattice (FLS) as an anisotropic gain medium. The anisotropy in the gain enables us to both control and switch the polarization state of the optically pumped lasing output. We obtain room-temperature lasing for wavelengths from 690 to 720 nm. The output is linearly polarized and the polarization direction is fixed, either parallel or perpendicular to the FLS layers. By tuning the cavity resonance wavelength, we demonstrate high contrast switching between two orthogonal linear polarization states in the FLS surface emitting laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109142
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum wire microcavity laser made from GaAs fractional layer superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1759-1761 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first demonstration of lasing action in a quantum wire microcavity semiconductor laser made from an array of (AlAs)1/4(GaAs)3/4 fractional-layer superlattice (FLS) quantum wires. The FLS growth method produces uniform, densely packed, damage-free arrays of nanometer-size quantum wires which are integrated into an optical microcavity that is the size of the wavelength of the light. We obtain room temperature optically pumped lasing for wavelengths from 670 to 690 nm. The lasing output is linearly polarized parallel to the quantum wires, reflecting the higher optical gain for polarization direction parallel to the wires. The combination of a semiconductor quantum wire active material with an optical microcavity offers the possibility of ultimately compact, highly efficient laser sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111799
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  • 10
    Electronic Resource
    Electronic Resource
    Step ordering during fractional-layer superlattice growth on GaAs(001) vicinal surfaces by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 72-74 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Step ordering during fractional-layer superlattice (FLS) growth is observed by trans- mission electron microscopy. A cross-sectional transmission electron micrograph of an (AlAs)1/2(GaAs)1/2FLS shows that the steps of unequal spacings observed on a GaAs surface develop a sequence of uniformly spaced steps of single monolayer height during the growth. Comparison of the observed FLS structure with a numerical simulation based on the assumption of unequal incorporation probabilities of adatoms into up steps and down steps shows that a net flux into the up steps 2%–4% larger than that into the down steps is enough to reproduce the FLS growth. It is demonstrated that the FLS growth provides a unique opportunity to observe the step ordering process directly and determine the anisotropy of diffusion quantitatively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109700
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