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  • 1
    Keywords: Environmental management. ; Pollution. ; Environmental monitoring. ; Environmental Management. ; Pollution. ; Environmental Monitoring.
    Description / Table of Contents: Introduction -- Environmental background investigation of groundwater contamination sites -- Rating and evaluation of pollution source intensity for typical groundwater contamination sites -- Risk assessment of groundwater contamination sites -- Application case.
    Abstract: This book introduces readers to environmental background investigation, pollution source intensity evaluation and risk assessment approaches used at three main types of groundwater-contaminated sites: municipal domestic waste landfills, hazardous waste landfills and oil-contaminated sites. In addition, typical contaminated sites throughout China are examined to demonstrate how these approaches can be applied for their investigation, assessment and restoration. By reading this book, readers will gain a deeper understanding of the restoration and management of typical groundwater-contaminated sites.
    Type of Medium: Online Resource
    Pages: XI, 388 p. 145 illus., 115 illus. in color. , online resource.
    Edition: 1st ed. 2021.
    ISBN: 9789811528453
    DDC: 333.7
    Language: English
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  • 2
    Call number: SR 90.0081(410)
    In: Reports of the Department of Geodetic Science and Surveying
    Type of Medium: Series available for loan
    Pages: IV, 94 S.
    Series Statement: Report / Department of Geodetic Science and Surveying, the Ohio State University 410
    Language: English
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 3
    Publication Date: 2024-03-15
    Description: A batch culture experiment was conducted to study the interactive effects of ocean acidification (OA) and solar ultraviolet radiation (UVR, 280–400 nm) on the harmful dinoflagellate Karenia mikimotoi. Cells were incubated in 7-days trials under four treatments. Physiological (growth, pigments, UVabc) and toxicity (hemolytic activity and its toxicity to zebrafish embryos) response variables were measured in four treatments, representing two factorial combinations of CO2 (400 and 1000 μatm) and solar irradiance (with or without UVR). Toxic species K. mikimotoi showed sustained growth in all treatments, and there was not statistically significant difference among four treatments. Cell pigment content decreased, but UVabc and hemolytic activity increased in all HC treatments and PAB conditions. The toxicity to zebrafish embryos of K. mikimotoi was not significantly different among four treatments. All HC and UVR conditions and the combinations of HC*UVR (HC-PAB) positively affected the UVabc, hemolytic activity in comparison to the LC*P (LC-P) treatment, and negatively affected the pigments. Ocean acidification (OA) was probably the main factor that affected the chlorophyll-a (Chl-a) and UVabc, but UVR was the main factor that affected the carotenoid (Caro) and hemolytic activity. There were no significant interactive effects of OA*UVR on growth, toxicity to zebrafish embryos. If these results are extrapolated to the natural environment, it can be hypothesized that this strain (DP-C32) of K. mikimotoi cells have the efficient mechanisms to endure the combination of ocean acidification and solar UVR. It is assumed that this toxic strain could form harmful bloom and enlarge the threatening to coastal communities, marine animals, even human health under future conditions.
    Keywords: Alkalinity, total; Aragonite saturation state; Bicarbonate ion; Bicarbonate ion, standard deviation; Bottles or small containers/Aquaria (〈20 L); Calcite saturation state; Calculated using CO2SYS; Calculated using seacarb after Nisumaa et al. (2010); Carbon, inorganic, dissolved; Carbon, inorganic, dissolved, standard deviation; Carbonate ion; Carbonate ion, standard deviation; Carbonate system computation flag; Carbon dioxide; Carbon dioxide, standard deviation; Carotenoids, standard deviation; Carotenoids per cell; Cell density; Cell density, standard deviation; Chlorophyll a, standard deviation; Chlorophyll a per cell; Chromista; Day of experiment; Deformation rate; Deformation rate, standard deviation; Experiment duration; Fugacity of carbon dioxide (water) at sea surface temperature (wet air); Growth/Morphology; Growth rate; Growth rate, standard deviation; Haemolytic activity; Haemolytic activity, standard deviation; Immunology/Self-protection; Karenia mikimotoi; Laboratory experiment; Laboratory strains; Light; Myzozoa; Not applicable; OA-ICC; Ocean Acidification International Coordination Centre; Optical density; Partial pressure of carbon dioxide, standard deviation; Partial pressure of carbon dioxide (water) at sea surface temperature (wet air); Pelagos; pH; pH, standard deviation; Phytoplankton; Ratio; Ratio, standard deviation; Registration number of species; Salinity; Single species; Solar radiation; Solar ultraviolet radiation; Species; Temperature, water; Temperature, water, standard deviation; Time in hours; Treatment; Type; Ultraviolet absorbing compounds; Ultraviolet absorbing compounds, standard deviation; Uniform resource locator/link to reference; Wavelength
    Type: Dataset
    Format: text/tab-separated-values, 68105 data points
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, calculations of the hole initiated interband impact ionization rate in bulk silicon and GaAs are presented based on an ensemble Monte Carlo simulation with the inclusion of a wave-vector-dependent numerical transition rate formulation. The ionization transition rate is determined for each of the three valence bands, heavy, light, and split-off, using Fermi's golden rule with a two-body, screened Coulomb interaction. The dielectric function used within the calculation is assumed to be wave-vector-dependent. Calculations of the field-dependent impact ionization rate as well as the quantum yield are presented. It is found from both the quantum yield results and examination of the hole distribution function that the effective threshold energy for hole initiated impact ionization is relatively soft, similar to that predicted for the corresponding electron initiated ionization rate threshold in both GaAs and silicon. It is further found that light-hole initiated ionization events occur more frequently than either heavy or split-off initiated ionization events in bulk silicon over the applied electric field strengths examined here, 250–500 kV/cm. Conversely, in GaAs, the vast majority of hole initiated ionization events originate from holes within the split-off band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 974-981 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ensemble Monte Carlo calculations of the electron interband impact ionization rate in bulk GaAs are presented using a wave-vector (k)-dependent formulation of the ionization transition rate. The transition rate is evaluated through use of numerically generated wavefunctions determined via a k⋅p calculation within the first two conduction bands at numerous points within a finely spaced three-dimensional grid in k space. The transition rate is determined to be greatest for states within the second conduction band. It is found that the interband impact ionization transition rate in bulk GaAs is best characterized as having an exceedingly "soft'' threshold energy. As a consequence, the dead space, defined as the distance over which the ionization probability for a given carrier is assumed to be zero, is estimated to be much larger than that estimated using a "harder'' threshold. These results have importance in the design of multiquantum-well avalanche photodiodes.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ensemble Monte Carlo technique including the details of the first four conduction bands within the full Brillouin zone is used to calculate the basic electronic transport properties for both zincblende and wurtzite crystal phases of bulk gallium nitride. The band structure throughout the Brillouin zone is determined using the empirical pseudopotential method. Calculations of the electron steady-state drift velocity, average energy, valley occupancy and band occupancy in the range of electric fields up to 500 kV/cm are presented. It is found that the threshold electric field for intervalley transfer is greater and that the second conduction band is more readily occupied in wurtzite than in zincblende GaN over the range of electric fields examined here. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6737-6737 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan [Solid State Electron. 36, 1493 (1993)], and a more exact, numerical method of Y. Wang and K. F. Brennan [J. Appl. Phys. 75, 313 (1994)]. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities.Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which "near vertical,'' small change in k, transitions occur.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4009-4015 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical study of the effect of the hole-plasmon interaction on the calculated bulk transport properties of degenerate GaAs is presented. The calculations are performed using an ensemble Monte Carlo simulation which includes the full details of the heavy, light, and split-off valence bands derived from a k(open circle)p calculation as well as all of the dominant hole-phonon scattering mechanisms. The hole-plasmon interaction is treated as a separate scattering mechanism and is computed to first order in perturbation theory. The plasmon dispersion relation is determined numerically by finding the zeroes of the dielectric function assuming hole occupation within both the heavy- and light-hole bands. The hole-plasmon scattering rate is computed self-consistently during the course of the Monte Carlo simulation as a function of the hole concentration and carrier temperature within the heavy-hole and light-hole bands. It is found that at degenerate hole concentrations, the hole-plasmon scattering rate is much smaller than the dominant phonon scattering rates in GaAs at the range of applied electric field strengths considered. It is also found that the hole-plasmon scattering rate has little appreciable effect on the calculated steady-state velocity-field and energy-field characteristics in degenerate GaAs within the present model and under the prescribed conditions.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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