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  • 1
  • 2
    Publication Date: 2017-04-04
    Description: The warm-temperate regions of the globe characterized by dry summers and wet winters (Mediterranean climate; MED) are especially vulnerable to climate change. The potential impact on water resources,ecosystems and human livelihood requires a detailed picture of the future changes in this unique climate zone. Here we apply a probabilistic approach to quantitatively address how and why the geographic distribution of MED will change based on the latest-available climate projections for the 21st century. Our analysis provides, for the first time, a robust assessment of significant northward and eastward future expansions of MED over both the Euro-Mediterranean and western North America. Concurrently, we show a significant 21st century replacement of the equatorward MED margins by the arid climate type.Moreover, future winters will become wetter and summers drier in both the old and newly established MED zones. Should these projections be realized, living conditions in some of the most densely populated regions in the world will be seriously jeopardized.
    Description: Published
    Description: 7211
    Description: 4A. Clima e Oceani
    Description: JCR Journal
    Description: restricted
    Keywords: CMIP5 projections ; Mediterranean climate ; 01. Atmosphere::01.01. Atmosphere::01.01.02. Climate
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 3
    Publication Date: 2022-05-25
    Description: Author Posting. © American Geophysical Union, 2010. This article is posted here by permission of American Geophysical Union for personal use, not for redistribution. The definitive version was published in Geochemistry Geophysics Geosystems 11 (2010): Q03007, doi:10.1029/2009GC002667.
    Description: Gas hydrate formation and dissociation in sediments are accompanied by changes in the bulk volume of the sediment and can lead to changes in sediment properties, loss of integrity for boreholes, and possibly regional subsidence of the ground surface over areas where methane might be produced from gas hydrate in the future. Experiments on sand, silts, and clay subject to different effective stress and containing different saturations of hydrate formed from dissolved phase tetrahydrofuran are used to systematically investigate the impact of gas hydrate formation and dissociation on bulk sediment volume. Volume changes in low specific surface sediments (i.e., having a rigid sediment skeleton like sand) are much lower than those measured in high specific surface sediments (e.g., clay). Early hydrate formation is accompanied by contraction for all soils and most stress states in part because growing gas hydrate crystals buckle skeletal force chains. Dilation can occur at high hydrate saturations. Hydrate dissociation under drained, zero lateral strain conditions is always associated with some contraction, regardless of soil type, effective stress level, or hydrate saturation. Changes in void ratio during formation-dissociation decrease at high effective stress levels. The volumetric strain during dissociation under zero lateral strain scales with hydrate saturation and sediment compressibility. The volumetric strain during dissociation under high shear is a function of the initial volume average void ratio and the stress-dependent critical state void ratio of the sediment. Other contributions to volume reduction upon hydrate dissociation are related to segregated hydrate in lenses and nodules. For natural gas hydrates, some conditions (e.g., gas production driven by depressurization) might contribute to additional volume reduction by increasing the effective stress.
    Description: This research was initially supported by the Chevron Joint Industry Project on Methane Hydrates under contract DE‐FC26‐01NT41330 from the U.S. Department of Energy to Georgia Tech. Additional support was provided to J. Y. Lee by KIGAM, GHDO, and MKE and J. C. Santamarina by the Goizueta Foundation.
    Keywords: Gas hydrate ; Hydrate-bearing sediment ; Phase transformation ; Strain
    Repository Name: Woods Hole Open Access Server
    Type: Article
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  • 4
    Publication Date: 2021-11-09
    Description: Ensembles of retrospective 2-month dynamical forecasts initiated on 1May are used to predict the onset of the Indian summer monsoon (ISM) for the period 1989–2005. The subseasonal predictions (SSPs) are based on a coupled general circulation model and recently they have been upgraded by the realistic initialization of the atmosphere with initial conditions taken from reanalysis. Two objective large-scale methods based on dynamical circulation and hydrological indices are applied to detect the ISM onset. The SSPs show some skill in forecasting earlier-than-normal ISM onsets, while they have difficulty in predicting late onsets. It is shown that significant contribution to the skill in forecasting early ISM onsets comes from the newly developed initialization of the atmosphere from reanalysis. On one hand, atmospheric initialization produces a better representation of the atmospheric mean state in the initial conditions, leading to a systematically improved monsoon onset sequence. On the other hand, the initialization of the atmosphere allows some skill in forecasting the northward propagating intraseasonal wind and precipitation anomalies over the tropical Indian Ocean. The northward propagating intraseasonal modes trigger the monsoon in some early-onset years. The realistic phase initialization of these modes improves the forecasts of the associated earlier-than-normal monsoon onsets. The prediction of late onsets is not noticeably improved by the initialization of the atmosphere. It is suggested that late onsets of the monsoon are too far away from the start date of the forecasts to conserve enough memory of the intraseasonal oscillation (ISO) anomalies and of the improved representation of the mean state in the initial conditions.
    Description: Published
    Description: 778-793
    Description: 4A. Clima e Oceani
    Description: JCR Journal
    Description: restricted
    Keywords: indian summer monsoon ; onset ; seasonal predictions ; 01. Atmosphere::01.01. Atmosphere::01.01.02. Climate ; 01. Atmosphere::01.01. Atmosphere::01.01.04. Processes and Dynamics
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
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  • 5
    Publication Date: 2022-05-26
    Description: Author Posting. © American Geophysical Union, 2010. This article is posted here by permission of American Geophysical Union for personal use, not for redistribution. The definitive version was published in Journal of Geophysical Research 115 (2010): B11104, doi:10.1029/2009JB006669.
    Description: The marked decrease in bulk electrical conductivity of sediments in the presence of gas hydrates has been used to interpret borehole electrical resistivity logs and, to a lesser extent, the results of controlled source electromagnetic surveys to constrain the spatial distribution and predicted concentration of gas hydrate in natural settings. Until now, an exhaustive laboratory data set that could be used to assess the impact of gas hydrate on the electromagnetic properties of different soils (sand, silt, and clay) at different effective stress and with different saturations of hydrate has been lacking. The laboratory results reported here are obtained using a standard geotechnical cell and the hydrate-formed tetrahydrofuran (THF), a liquid that is fully miscible in water and able to produce closely controlled saturations of hydrate from dissolved phase. Both permittivity and electrical conductivity are good indicators of the volume fraction of free water in the sediment, which is in turn dependent on hydrate saturation. Permittivity in the microwave frequency range is particularly predictive of free water content since it is barely affected by ionic concentration, pore structure, and surface conduction. Electrical conductivity (or resistivity) is less reliable for constraining water content or hydrate saturation: In addition to fluid-filled porosity, other factors, such as the ionic concentration of the pore fluid and possibly other conduction effects (e.g., surface conduction in high specific surface soils having low conductivity pore fluid), also influence electrical conductivity.
    Description: This research was initially supported by the Chevron Joint Industry Project on Methane Hydrates under contract DE‐FC26‐01NT41330 from the U.S. Department of Energy. Additional support was provided to J.C.S. by the Goizueta Foundation at Georgia Tech, to J.Y.L. by KIGAM, and to C. Ruppel by the USGS.
    Keywords: Gas hydrate ; Electromagnetic properties ; Resistivity
    Repository Name: Woods Hole Open Access Server
    Type: Article
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  • 6
    Publication Date: 2022-05-26
    Description: Author Posting. © American Geophysical Union, 2010. This article is posted here by permission of American Geophysical Union for personal use, not for redistribution. The definitive version was published in Journal of Geophysical Research 115 (2010): B11105, doi:10.1029/2009JB006670.
    Description: The small-strain mechanical properties (e.g., seismic velocities) of hydrate-bearing sediments measured under laboratory conditions provide reference values for calibration of logging and seismic exploration results acquired in hydrate-bearing formations. Instrumented cells were designed for measuring the compressional (P) and shear (S) velocities of sand, silts, and clay with and without hydrate and subject to vertical effective stresses of 0.01 to 2 MPa. Tetrahydrofuran (THF), which is fully miscible in water, was used as the hydrate former to permit close control over the hydrate saturation Shyd and to produce hydrate from dissolved phase, as methane hydrate forms in most natural marine settings. The results demonstrate that laboratory hydrate formation technique controls the pattern of P and S velocity changes with increasing Shyd and that the small-strain properties of hydrate-bearing sediments are governed by effective stress, σ′v and sediment specific surface. The S velocity increases with hydrate saturation owing to an increase in skeletal shear stiffness, particularly when hydrate saturation exceeds Shyd≈ 0.4. At very high hydrate saturations, the small strain shear stiffness is determined by the presence of hydrates and becomes insensitive to changes in effective stress. The P velocity increases with hydrate saturation due to the increases in both the shear modulus of the skeleton and the bulk modulus of pore-filling phases during fluid-to-hydrate conversion. Small-strain Poisson's ratio varies from 0.5 in soft sediments lacking hydrates to 0.25 in stiff sediments (i.e., subject to high vertical effective stress or having high Shyd). At Shyd ≥ 0.5, hydrate hinders expansion and the loss of sediment stiffness during reduction of vertical effective stress, meaning that hydrate-rich natural sediments obtained through pressure coring should retain their in situ fabric for some time after core retrieval if the cores are maintained within the hydrate stability field.
    Description: Initial support for this research to J.C.S. and C.R. at Georgia Tech was provided by the Chevron Joint Industry Project on Methane Hydrates under contract DE‐FC26‐01NT41330 from the U.S. Department of Energy. Additional support to J.C.S. was provided by the Goizueta Foundation at Georgia Tech and to J.Y.L. by KIGAM, GHDO, and MKE.
    Keywords: Gas hydrate ; Mechanical properties ; Seismic velocity
    Repository Name: Woods Hole Open Access Server
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1794-1800 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy study on the microstructure of silicon thin films, deposited at temperature ranges of 565 °C∼600 °C and at 200 mTorr by low pressure chemical vapor deposition and annealed at 570 °C, was carried out so that the formation mechanism of crystallites observed in as-deposited mixed-phase silicon thin films could be proposed. Crystallites were observed only at the Si/SiO2 interface in the as-deposited silicon thin film deposited at 570 °C for 28 min. Their size was about 20 nm and they had an irregular shape. Areal density of crystallites in the as-deposited film was about 4 × 1010/cm2, but that in the film deposited as an amorphous phase and annealed at 570 °C for 2 h was about 2×109/cm2. No remarkable crystal growth occurred in the film deposited at 570 °C for 28 min and then annealed at 570 °C for 1 h. Two kinds of crystallites were observed in the film annealed at 570 °C for 3 h. The first, observed only at the Si/SiO2 interface, had an irregular shape, and the second, grown through the entire thickness of the film, had an elongated elliptical shape. On the basis of above results, it was proposed that crystallites observed in as-deposited silicon thin films were formed not because silicon films deposited as an amorphous phase had been annealed during the deposition process, but because silicon films were deposited as a crystalline phase at the initial stage of the deposition process and then deposited as an amorphous phase after the initial stage of the deposition process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7549-7554 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of amorphous layers and residual defects in SiF+/BF2+ implanted and annealed (100)Si was investigated on an atomic level by using a high-resolution transmission electron microscope. Amorphous layers, of which depths were about 70% of those of amorphous layers formed by Si+ preamorphization at the same implantation energies, could be formed by SiF+ preamorphization. Two distinct layers of defects were formed in SiF+/BF2+ implanted wafers annealed at 600 °C for 1 h and then rapidly thermally annealed at 950 °C for 30 s. One layer, observed near the surface regions, consisted of intrinsic stacking faults bounded by 30° Shockley partial dislocations, twins, amorphous regions, and fine clusters. The other layer, observed near the original amorphous/crystalline interface, consisted of Frank partial dislocations of which Burgers vector is 1/3a〈111〉 and 60° perfect dislocations of which Burgers vector is 1/2a〈110〉. These defects were formed by retarding growth rate by fluorine atoms; outdiffusion of fluorine atoms; lattice misorientation between the substrate and crystalline pockets; and the introduction of an extra half- plane during the preamorphization process. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2482-2488 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study on the interface properties of Schottky contacts on (NH4)2Sx-treated n- and p-type In0.5Ga0.5P is carried out. The effects of sulfur (S) treatment on Schottky barrier height are investigated by employing capacitance-voltage and current-voltage (I-V) measurements. It is also demonstrated that the passivation effects of S treatments on the interface traps can be monitored by deep level transient spectroscopy (DLTS) measurements. It is observed that the S treatment increases the dependence of Schottky barrier height on the metal work function. The interface traps in the Schottky contact formed by the heat treatment are found to give their energy state above midgap. It is found that the S treatment can passivate these interface traps as well as suppress their generation under the heat treatment. For both n- and p-In0.5Ga0.5P, contact-related majority carrier traps, which are different from the thermally generated interface traps, are observed at the Al-In0.5Ga0.5P interface and they can be annealed out by a heat treatment at 350 oC. It is also found that the I-V characteristics of Au/InGaP diodes formed on the S-treated surface degrade more rapidly than those formed on the untreated surface. Through cross-sectional transmission electron microscope observation, this poorer electrical reliability of Au contact on S-treated surfaces is attributed to the enhanced intermixing of group III elements with Au. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 95-102 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-resolution transmission electron microscopy study of the solid phase crystallization of amorphous silicon thin films deposited on SiO2 at 520 °C by low pressure chemical vapor deposition and annealed at 550 °C in a dry N2 ambient was carried out so that the grain growth mechanism, various types of defects, and the origins of defect formation could be understood on an atomic level. Silicon crystallites formed at the initial stage of the crystallization had a circular shape and grains had a branched elliptical or a dendritic shape. Many twins, of which {111} coherent boundaries were parallel to the long axis of a grain, were observed in the interior of all the elongated grains. In addition to twins, the following defects were observed in the grain: intrinsic stacking faults, extrinsic stacking faults, perfect dislocations, extended screw dislocations, and Shockley partial dislocations. These defects were formed by the following reasons: errors in the stacking sequence at the amorphous/crystalline interface; jumps of a twin plane; the intersecting of two crystal growth fronts slightly misoriented; and the intersecting of two twin planes at the amorphous/crystalline interface. Among those defects, twins and stacking faults provided a preferable nucleation site for an atomic step of a {111} plane. As a result, it was concluded that grain growth in the 〈112〉 direction along the {111} plane parallel to the long axis of a grain was accelerated by twins and stacking faults. © 1995 American Institute of Physics.
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