ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We use the active-layer photomixing technique to directly modulate the output of a GaAs semiconductor laser operating at temperatures as low as 4.2 K. The technique produces modulation with nearly perfect immunity to device parasitic effects, revealing the laser diode's intrinsic modulation response. At 4.2 K the parasitic corner frequency is estimated to be 410 MHz, yet the response appears ideal out to 15 GHz. We measure the dynamical parameters governing the response function, the relaxation resonance frequency, and the damping rate, and discuss their low-temperature behavior.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100890
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