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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 52 (1987), S. 691-694 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 60 (1988), S. 284-286 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 59 (1987), S. 2750-2752 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 5377-5382 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using a new magnetically focused time-of-flight photoelectron spectrometer, the ultraviolet photoelectron spectra (UPS) of mass-selected negative copper clusters have been measured at photon energy of 4.66 eV for all clusters in the range from 6 through 41 copper atoms. These UPS data provide the first detailed probe of the 4s valence band structure of such medium size negative copper clusters, and extend previous approximate measures of the electron affinity of the corresponding neutral species. The results are in accord with the predictions of the ellipsoidal shell model for monovalent metal clusters. In particular, clusters 8, 20, and 40 (which correspond to spherical shell closings in this simple model) are found to have unusually low electron affinities and large HOMO–LUMO gaps. Subshell closings at 14 and 34 also appear special in this new UPS data.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7516-7523 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption of carbon monoxide on copper covered Ni (111) surfaces has been studied by high resolution electron energy loss spectroscopy (HREELS). CO is used to titrate the various adsorption sites present, yielding information about the structure and composition of the two metal species at the surface. The results show that CO adsorbs at locations which resemble the top and bridge sites of pure Cu(111) and Ni(111) surfaces, and on a new mixed Cu–Ni bridge site. For a Cu coverage greater than one monolayer, the CO HREEL spectra are very similar to those observed on the clean Cu(111) surface. For Cu coverages less than one monolayer, and deposition at 80 K, small Cu clusters and Cu islands are observed. For submonolayer Cu deposition at temperatures 〉300 K, a mixed Cu–Ni layer can be formed. The HREELS results for the mixed surface with low Ni concentration show that CO adsorbs on the Ni top sites first (at T〈400 K), Cu top sites next (at T〈150 K), and then a mixed Cu–Ni bridge site (at T〈120 K). Strong evidence suggests that the mixed CuNi bridge site is occupied by depopulating the Ni–CO top-site species.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3323-3327 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two kinds of metallic glasses, 2605S2 and VAC6025, were used in the experiments. Anneals in transverse and longitudinal fields have been performed at various annealing temperatures Ta. The objective was to find how ρ(parallel) and ρ⊥ vary with field anneal. A large current density sent through the sample has been used to reorient the domain walls without rotating the domain magnetization. Both wall displacements and domain rotation processes were found to contribute to ρ(parallel) and ρ⊥ below saturation. The "excess resistivity'' associated with domain walls was used to determine the anomalous Hall coefficient R1 of both materials. Independent Hall resistivity measurements were also performed to make comparisons of R1.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5447-5454 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of hydroxyl due to reaction of a silica glass made by the modified chemical vapor deposition process with hydrogen has been studied for temperatures between 200 and 900 °C. The glass is treated under 1 atm of hydrogen, which diffuses into and reacts with the glass. For treatment temperatures between 900 and 500 °C, spatial hydroxyl concentration profiles are measured. For treatment at 400 °C and below, only equilibrium OH concentrations are measured. Three temperature regimes are identified for the reaction: T〉700 °C, 700 °C〉T〉400 °C, and T〈400 °C. A simple model combining H2 diffusion with chemical reaction explains the profile data for temperatures above 500 °C. The model assumes a finite number of preexisting reactive sites in the glass, which does not depend on treatment temperature. Assuming the same net reaction over the entire temperature range, enthalpies and entropies of reaction are derived from the data. The reaction at 800 °C of H2 with the glass Suprasil W has also been studied. For this glass the reaction is extremely rapid compared to H2 diffusion, and the kinetics are described by a tarnishing model. These results demonstrate that OH formation in silica glass due to reaction with H2 depends on preexisting defects in the glass, and therefore depends strongly on the nature and thermal history of the glass.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 757-762 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of CdTe were grown on CdTe and InSb substrates by metalorganic chemical vapor deposition using dimethylcadmium and dimethyltelluride as alkyl sources. Specular CdTe layers were grown on InSb at temperatures between 350 and 375 °C with serious out-diffusion of In from substrates. Dimethyltelluride is the controlling species of this growth system. Typical growth rates were 4 to 7 μm/h. Low-temperature photoluminescent measurements revealed the superior quality of epitaxial layers grown on CdTe substrates. The bound-exciton emission at 1.590 eV and the band-edge emission at 1.548 eV are the dominant peaks. Homostructure CdTe epitaxial layers grown between 330 and 410 °C possess the best surface morphology. Hole concentrations in the 1013-cm−3 range and a carrier mobility over 100 cm2/V sec were observed in these layers at 77 K. The highest hole mobility is 555 cm2/V sec in the sample grown at 400 °C. Layers grown outside this range show n-type conductivity with deteriorated electron mobilities and photoluminescent spectra.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4983-4988 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron was implanted into the p-type Hg0.7Cd0.3Te epitaxial crystals. The implantation was carried out using a fluence of 1.45×1015 cm−2 and an energy of 100 keV. The implanted specimens, as well as unimplanted ones, were annealed without encapsulation by one-zone annealing in an atmosphere of mercury vapor supplied from liquid mercury at temperatures from 250–500 °C. From the annealing of unimplanted specimens, a p-n transition at 350 °C is observed. On the other hand, from the annealing of implanted specimens, it is found that the n-type conductivity induced by implantation damage is gradually reduced with the increase of annealing temperature until a minimum appears around 350 °C, and then increases again. An enhancement of n-type conductivity can be further observed from annealing under a reduced pressure of mercury. A similar result is also obtained from the annealing of implanted specimens using a HgTe compound as the mercury reservoir instead of liquid mercury. The results suggest that the implanted borons become activated dopants after annealing at high temperature. A mechanism on the activation of boron in HgCdTe is thus proposed, and the experimental results can be satisfactorily explained by the mechanism.
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