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  • ELECTRONIC COMPONENTS AND CIRCUITS  (1)
  • LASERS AND MASERS  (1)
  • 1985-1989  (2)
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  • 1985-1989  (2)
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  • 1
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    Unknown
    High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy (1988)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.
    Keywords: LASERS AND MASERS
    Type: Applied Physics Letters (ISSN 0003-6951); 53; 1248-125
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Composite Semiconductor Substrates (1989)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: NPO-17342 , NASA Tech Briefs (ISSN 0145-319X); 13; 5; P. 22
    Format: text
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    NASA TECHNICAL REPORTS
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