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  • 1990-1994  (123)
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  • 1
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    (Table 1) Chemical compositions of beryllium in sediments and pore waters of ODP Hole 131-808 (1994)
    PANGAEA
    Details
    Publication Date: 2024-01-09
    Description: Studies of Be distributions in subduction zone sediments will help to understand questions regarding the enrichments of cosmogenic Be-10 in arc volcanic rocks. Analyses of Be-10 and Be-9 in sediments of Ocean Drilling Program Site 808, Nankai Trough and Be-9 in porewaters of Site 808 and Sites 671 and 672, Barbados ridge complex, show significant decreases in solid phase Be-10 and large increases of porewater Be-9 at the location of the décollement zone and below or at potential flow conduits. These data imply the potential mobilization of Be during pore fluid expulsion upon sediment burial. Experiments involving reaction between a décollement sediment and a synthetic NaCl-CaCl2 solution at elevated pressure and temperatures were conducted in an attempt to mimic early subduction zone processes. The results demonstrate that Be is mobilized under elevated pressure and temperature with a strong pH dependence. The Be mobilization provides an explanation of Be-10 enrichment in arc volcanic rocks and supports the argument of the importance of the fluid processes in subduction zones at convergent margins.
    Keywords: 131-808; Accelerator mass spectrometry (AMS); Age model; Beryllium-10; Beryllium-9; Calculated; Coefficient; COMPCORE; Composite Core; DEPTH, sediment/rock; DSDP/ODP/IODP sample designation; EIectron capture detection gas chromatography (ECD-GC); Elevation of event; Joides Resolution; Latitude of event; Leg131; Longitude of event; Ocean Drilling Program; ODP; Philippine Sea; Sample code/label
    Type: Dataset
    Format: text/tab-separated-values, 100 data points
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    DATA PANGAEA
  • 2
    Electronic Resource
    Electronic Resource
    In situ ultraviolet-visible reflection spectroscopy of cobalt tetrasulfonated phthalocyanine irreversibly adsorbed on the basal plane of highly oriented pyrolytic graphite (1990)
    s.l. : American Chemical Society
    Analytical chemistry 62 (1990), S. 2647-2650 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00222a025
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Piezoelectrically-induced switching of 90° domains in tetragonal BaTiO3 and PbTiO3 investigated by micro-Raman spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4481-4486 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Domain switching of 90° ferroelectric domains in tetragonal BaTiO3 and PbTiO3 is induced by the application of stress along specific crystallographic axes. For BaTiO3, single-domain crystals are obtained from twinned specimens by the application of ∼1.1 MPa of stress parallel to the a axis and twin boundaries are induced by application of ∼0.22 MPa of stress parallel to the c axis. Similar piezoelectrically-induced domain switching was observed in PbTiO3 at elevated temperature. We observed the rotation of the crystallographic axes associated with domain switching via micro-Raman spectroscopy. These results were consistent with optical microscope images of the domain switching which demonstrates the usefulness of micro-Raman spectroscopy for the study of ferroelectric domain structures. A phenomenological treatment of domain switching in a piezoelectrically-coupled system is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350792
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  • 4
    Electronic Resource
    Electronic Resource
    The evidence for interaction of the N-N pair with oxygen in Czochralski silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3775-3777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence for interaction between the N-N pair and interstitial O in N-doped Czochralski silicon has been presented by studying the annealing behavior of the corresponding IR absorption bands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348476
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  • 5
    Electronic Resource
    Electronic Resource
    A high field Faraday magnetometer for measurements under high pressure (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5638-5638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Commercially supplied SQUID magnetometers which provide the best sensitivity (10−8 emu) are becoming more popular for routine magnetic property measurements. However, these magnetometers generally provide a very small usable sample space (9 mm) and a maximum field limited to 5.5 T. The sensitivity of SQUID magnetometers drops with increasing magnetic fields strengths and becomes comparable to or lesser than the sensitivity of Faraday magnetometers at a field of 5.5 T (5×10−5 emu). Therefore, Faraday magnetometers are a better choice, if a high sensitivity in high magnetic fields is required and/or a large sample space is needed, for example, to accommodate a pressure clamp for high pressure measurements. We have constructed a Faraday magnetometer which facilitates the measurements under high pressure conditions (up to 20 kbars in Cu–Be clamps) and in fields up to 13 T in a 24 mm warm bore (1.3–300 K) and 45 mm cold bore. To accommodate the weight of the pressure clamp, the magnetometer is equipped with a microbalance of extended weighing capacity (100 g) with a sensitivity of 10−6 g. Its superconducting magnet was specially designed to have a gradient such that the product H dH/dz remains nearly constant over a cylindrical sample volume of 20 mm×50 mm, which is the typical size of our pressure clamps. The details of pressure clamps will also be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353622
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  • 6
    Electronic Resource
    Electronic Resource
    Thin oxynitride film metal-oxide-semiconductor transistors prepared by low-pressure rapid thermal chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3619-3621 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin silicon oxynitride (Si-O-N) films have been deposited using low-pressure rapid thermal chemical vapor deposition (RTCVD) with silane (SiH4), nitrous oxide (N2O), and ammonia (NH3) as the reactive gases. Metal-oxide-semiconductor transistor transconductance measurements showed decreasing peak gm values but improved high field degradation characteristics. This is consistent with previous work on thermally nitrided oxides and suggests that the films are perhaps under tensile stress. Hot carrier stress at maximum substrate current was performed with the Si-O-N films displaying larger threshold voltage shifts when compared to furnace SiO2 indicating the possible existence of hydrogen related traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110067
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  • 7
    Electronic Resource
    Electronic Resource
    On the lack of correlation between film properties and solar cell performance of amorphous silicon-germanium alloys (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1399-1401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the performance of amorphous silicon-germanium alloy single-junction solar cells both before and after light soaking. The intrinsic layers of the cells have different germanium contents. Films were grown on glass with parameters nominally identical to those for the intrinsic layer of the cells and the defect density was measured using the constant photocurrent method. We do not find good correlation between cell performance and the measured defect density for these high quality materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108692
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  • 8
    Electronic Resource
    Electronic Resource
    Rapid thermal chemical vapor deposition of thin silicon oxide films using silane and nitrous oxide (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3063-3065 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (80–200 A(ring)) silicon dioxide (SiO2) films have been deposited by low pressure rapid thermal chemical vapor deposition (RTCVD), using silane (SiH4) and nitrous oxide (N2O) as the reactive gases for the first time. A deposition rate of 55 A(ring)/min has been achieved at 800 °C with a SiH4/N2O flow rate ratio of 2%. Auger electron spectroscopy (AES) and Rutherford back scattering spectroscopy (RBS) have shown a uniform and stoichiometric composition throughout the deposited oxide films. Electrical characterization of the films have shown an average catastrophic breakdown field of 13 MV/cm and a midgap interface trap density (Dit) of equal to or less than 5×1010 eV−1 cm−2. The results suggest that the deposited RTCVD SiO2 films using SiH4-N2O gas system may have the potential to be used as the gate dielectric in future low-temperature metal oxide semiconductor (MOS) device processes for ultralarge scale integration (ULSI).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106757
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  • 9
    Electronic Resource
    Electronic Resource
    Electron-temperature-gradient-driven instability in tokamak boundary plasma (1993)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 2206-2214 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A general method is developed for calculating boundary plasma fluctuations across a magnetic separatrix in a tokamak with a divertor or a limiter. The slab model, which assumes a periodic plasma in the edge reaching the divertor or limiter plate in the scrape-off layer (SOL), should provide a good estimate, if the radial extent of the fluctuation quantities across the separatrix to the edge is small compared to that given by finite particle banana orbit. The Laplace transform is used for solving the initial value problem. The electron-temperature-gradient (ETG)-driven instability is found to grow like t−1/2eγmt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860968
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  • 10
    Electronic Resource
    Electronic Resource
    Ion-temperature-gradient modes in noncircular tokamak geometry (1992)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 3216-3225 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The work of Xu and Rosenbluth [Phys. Fluids B 3, 627 (1991)] on ion-temperature-gradient modes in toroidal geometry is extended to noncircular cross sections to examine the scaling with the elongation κ. The growth rate, wave numbers, and stability thresholds are calculated for a flat density profile characteristic of H-mode operation, and a mixing-length estimate of the ion thermal diffusivity χi is calculated. It is found that in the plasma core, growth rates decrease as the central elongation κ increases, due to finite-Larmor-radius effects. The calculated χi is approximately of the form χi=DTi3/2[(LTi)c−LTi] where D and (LTi)c depend on τ=(Te/Ti) and geometry, and LTi=||Ti/∇Ti||. Preliminary evidence indicates fair agreement with experimental data near the plasma edge, where LTi(very-much-less-than) (LTi)c, but the fit is poorer in the core where LTi∼(LTi)c and the theoretical χi is very sensitive to the accuracy in calculating (LTi)c.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.860377
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