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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Efficient 1.3 and 1.55 μm InP-based electroabsorption waveguide modulators with planar device structures have been demonstrated. Elevated temperature oxygen ion implantation and/or the photoelastic effect induced by W metal stressor stripes deposited on the semiconductor surface have been used to produce these self-aligned planar guided-wave devices. The oxygen ion mixing process has been used to simultaneously achieve compositional disordering and electrical isolation of superlattice material while the photoelastic effect has been used to improve the lateral mode confinement. A 1.3 μm Franz–Keldysh modulator with a (approximately-greater-than)10 dB extinction ratio at 2 V and a 1.55 μm device with a (approximately-greater-than)10 dB extinction ratio at 7 V are reported. These single growth step planar processing techniques have also been used to fabricate relatively low-loss (〈4 dB/cm) double heterostructure InGaAs(P)/InP single-mode optical waveguides which demonstrate their usefulness in developing InP-based photonic integrated circuits.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2602-2610 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of III-V compound superlattice structures has received considerable attention recently due to its potential application for photonic devices. The conventional method to induce compositional disorder in a layered structure is to implant a moderate dose of impurity ions (∼1015/cm2) into the structure at room temperature, followed by a high-temperature annealing step (this process is referred to as IA here). Ion irradiation at room temperature alone does not cause any significant intermixing of layers. The subsequent high-temperature annealing step tends to restrict device processing flexibility. Ion mixing (IM) is capable of enhancing compositional disordering of layers at a rate which increases exponentially with the ion irradiation temperature. As a processing technique to planarize devices, ion mixing appears to be an attractive technology. In this work, we investigate compositional disordering in the AlGaAs/GaAs and the InGaAs/InP systems using ion mixing. We found that the ion mixing behavior of these two systems shows a thermally activated regime as well as an athermal regime, similar to that observed for metal-metal and metal-semiconductor systems. Ion mixing is observed to induce compositional disordering at significantly lower temperatures than that for the IA process. We have compared the two processes in terms of five parameters: (1) irradiation temperature, (2) dose dependence, (3) dose rate dependence, (4) annealing, and (5) ion dependence (including electrical effects and mass dependence). We found that the IM process is more efficient in utilizing the defects generated by ion irradiation to cause disordering. Both the physical mechanism of ion mixing and possible device implications will be discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1306-1311 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of simultaneous compositional disordering and the formation of electrical resistive layers induced by oxygen implantation in InGaAs/InP superlattices has been investigated. The disordering characteristics have been studied as a function of implantation temperature and ion dose. It was found that implantation at elevated temperatures (referred to as the IM or ion mixing process) usually leads to much more efficient disordering compared to implantation at room temperature followed by annealing at the same elevated temperature (referred to as the implantation plus annealing process). Of particular interest is the observation that ion mixing at 550 °C with 1×1013 O+/cm2 leads to significantly more disordering than implantation with the same dose at room temperature followed by annealing at 550 °C for the same period of ion mixing time. In addition, the electrical resistance of the ion-mixed layer at 550 °C increases 2600 times for the p-type InGaAs/InP superlattice structure, whereas the sample implanted at room temperature and annealed at 550 °C showed only a 20 times increase in electrical resistance. These results indicate a distinct advantage for the IM process in achieving simultaneous compositional disordering and electrical isolation for optoelectronic applications.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3775-3777 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence for interaction between the N-N pair and interstitial O in N-doped Czochralski silicon has been presented by studying the annealing behavior of the corresponding IR absorption bands.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3087-3089 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-power 1.55 μm large optical cavity (LOC) laser structure is successfully prepared for the first time by reasonably designing its configuration and by using a proper single step liquid phase epitaxy (LPE) so as to realize lasers with peak output power higher than 2 W per facet in pulsed operation at room temperature. The devices are also characterized by their lower threshold current ( Jth≤2.7 KA/cm2 for broad area contact structure) and high-temperature stability (T0≈130 K). At the same time they are of long-lived operation and are an ideal source of light in this spectral region.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2928-2930 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two optical pulse trains are generated at different wavelengths with a programmable delay between them, using active mode-locking of a multichannel grating cavity laser. For a channel separation of 2.2 nm, pulses with a duration of 60 ps and with a spectral width of 11.6 GHz have been obtained at a repetition rate of 1.78 GHz. The pulse width and power are stable to within 6%, irrespective of delay for a relatively wide range of dc bias conditions. © 1994 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Solar physics 134 (1991), S. 203-209 
    ISSN: 1573-093X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Data of cosmic-ray intensity from the Calgary Super Neutron Monitor and interplanetary plasma and field data are divided into three groups corresponding to the magnetic clouds preceded by shocks, followed by interaction region and clouds without any such association, observed during the period 1967–1982. A superposed epoch analysis of these data, in addition to the field variance data, have been performed. The results suggest the hypothesis that the Forbush decreases are caused by the scattering of particles in the region of enhanced turbulence, observed during the passage of shocked plasma (i.e., sheath) between the shock front and the magnetic cloud.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1573-093X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have examined the list of HSPS given by Lindbladt, Lundstedt, and Larsen (1989). The list of SSC and the cosmic-ray intensity registered at Calgary for the same epoch, 1978 to 1982, has been studied and their time variations, using the well-known Chree method of superposed epoch analysis for various groups of data have been carried out. We have shown results that indicate that SSC is an essential pre-requisite in initiating a cosmic-ray Forbush decrease, whereas the occurrence of HSPS alone does not produce a cosmic-ray decrease. Furthermore, our results also clearly reveal that SSC flares originating in a region to the east of the Sun-Earth line reveal a much larger cosmic-ray decrease than SSC associated with flares originating in a region to the west of the Sun-Earth line. Our results substantiate the study of Sarris, Dodopoulos, and Venkatesan (1989), determined for IMP 7 and 8 data (E≥ 35 MeV) for the higher neutron monitor energies. Sarris, Dodopoulos, and Venkatesan have observed that a cosmic-ray intensity decrease follows the group of SSC with flares on the east side of the Sun-spacecraft line, while the group with flares on the west side of the Sun-spacecraft line reveals little or no decrease in cosmic-ray intensity. In particular, the zero epochs for the two groups depend on the hours of onset of SSC. The group with flares on the east side (which are essentially associated with quasi-perpendicular shocks) are followed by cosmic-ray decreases while the group associated with flares on the west of the Sun-spacecraft line (which are usually associated with quasi-parallel shocks) do not reveal any appreciable decrease in cosmic-ray intensity.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Water, air & soil pollution 78 (1994), S. 375-382 
    ISSN: 1573-2932
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract The effect of gypsum amendment on transport of phosphorus (P) in a Pineda sand (loamy, silicious, hyperthermic Arenic Glossaqualf) was investigated in a leaching column experiment. Phosphorus was either placed on the surface of the soil or mixed with the surface 2 cm depth of soil in the column. Gypsum amendment decreased the transport of P in soil. Compared to the unamended soil, transport of P decreased by 35 and 54% in soils amended with 4.5 and 9.0 M.T./ha gypsum, respectively. The transport of P was further decreased by 74% when P was premixed with the surface 2 cm of soil. The transport of P was not influenced by the SO4 ion from gypsum amendment. Instead, formation of Ca-P precipitate appeared to be responsible for the decreased transport of P in the gypsum-amended soil.
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  • 10
    ISSN: 1612-1112
    Keywords: Column liquid chromatography ; Polymer encapsulated packings ; Poly(ethylstyrene-divinylbenzene) ; Preparation and evaluation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary A series of polymer-encapsulated packing materials for reversed phase high-performance liquid chromatography was prepared by radical polymerization of ethylstyrene and divinylbenzene with vinyl-modified silica in solution. Some characteristics such as polymer structure, swelling propensity, residual silanols, column efficiency and retention properties were evaluated. Such material is easy to pack and yields high column efficiencies. Its superior performance for the separation of mixtures of aromatic hydrocarbons, amino- and hydroxyl group containing compounds are demonstrated by several examples.
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