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  • 1
    Electronic Resource
    Electronic Resource
    An ultrahigh-vacuum system for STM studies (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2523-2526 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ultrahigh-vacuum (UHV) system for STM studies is described where a home-built STM is combined with a novel facility for in situ exchange of samples and tips. Technical details concerning the design of the sample and tip holders and the manipulation and storage equipment are given. For the preparation of organic films a compact evaporation source comprising two ovens with an excellent thermal insulation was constructed. First STM results of a coronene film on graphite and of tungsten diselenide are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144645
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  • 2
    Electronic Resource
    Electronic Resource
    Studies of bonding and valence states in YBa2Cu3O7−x through secondary-ion-mass spectrometry (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2429-2432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting compound YBa2Cu3O7−x (YBCO) and oxides of copper (CuO and mixture of CuO and Cu2O) have been examined by secondary-ion-mass spectrometry (SIMS). The results support the fact that two kinds of copper (from the consideration of bonding and valence state) exist in YBCO—one in the basal planes of charge reservoir layers and the other in the conduction layers. The bonding of Cu-O in the CuO2 conduction layer unit is similar to that in CuO. No Cu+++ secondary ions could be detected in the SIMS spectrum, in agreement with electron spectroscopy for chemical analysis, extended x-ray-absorption fine structure, and electron probe microanalysis measurements reported earlier. A plausible explanation has been given for this.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353098
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of annealing on the magnetics of NiFeMo thin films (abstract) : 37th annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6620-6620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiFeMox thin films, where 0〈x〈0.1, are considered for usage in high frequency magnetic sensors. Since the device manufacturing process requires that the thin film be exposed to temperatures above 200 °C, its thermal stability is an important criterion for device reliability.1 NiFeMox thin films, with a thickness of 75 nm and 0〈x〈0.1, were sputter-deposited on single crystal silicon wafers and their magnetic properties were measured after annealing for 2 h at various temperatures up to 350 °C. At lower Mo content, the anisotropy field Hk decreased with annealing temperature,2 whereas at higher Mo content, Hk showed an initial decrease and then an increase above 300 °C. With increasing temperature, the angle of dispersion θk showed a monotonous increase at lower Mo content. At higher Mo content, θk decreased at higher temperatures. At all Mo contents, the magnetostriction increased at higher temperatures. All as-deposited films had a residual tensile stress of about 200 MPa. At temperatures between 250 and 300 °C, the in situ tensile stress sharply increased. Above 300 °C, the stress started decreasing due to grain growth, the amount of decrease being dependent on the Mo content. The films were found to have much higher residual tensile stress (around 2000 MPa) after annealing, depending on the Mo content. The stress was calculated by measuring the wafer curvature with a laser. The microstructure was studied with transmission electron microscopy (TEM). ESCA indicated preferential oxidation of surface iron in NiFeMo during annealing. Changes in magnetics of NiFeMo were correlated to and explained by microstructural and compositional changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352530
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of interfaces on the electrical behavior of (Pb0.72La0.28)TiO3 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2027-2029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Paraelectric (Pb0.72La0.28)TiO3 or PLT(28) thin films were deposited on platinum coated Si substrates by the sol-gel technique. Two distinct groups of top metals, namely MT (Ni, Cr, and Ti, i.e., transition metals) and MN (Pt, Au, and Ag, i.e., noble metals) formed Ohmic and Schottky contacts, respectively. A Schottky barrier height of 1.83 eV at the Pt-PLT interface was determined. The conventional Schottky emission and Fowler–Nordheim tunneling equations were modified to account for the voltage dependence of the interfacial permittivity. It was found that Schottky emission, thermionic tunneling, and Fowler–Nordheim tunneling mechanisms were predominant in the voltage ranges of 2〈V〈7, 7〈V〈16, and V(approximately-greater-than)16, respectively. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112783
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  • 5
    Electronic Resource
    Electronic Resource
    Processing of a uniaxial ferroelectric Pb5Ge3O11 thin film at 450 °C with c-axis orientation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2487-2488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 A(ring)) were observed on (111) Pt-coated Si substrates when heat treated at 450 °C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 A(ring) film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106941
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of sol-gel solid phase epitaxial growth of ferroelectric Pb(Nb,Zr,Ti)O3 thin films on sapphire (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1278-1280 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports and discusses the observation of sol-gel solid phase epitaxy (SPE) of (110) Pb0.99Nb0.02(Zr0.52Ti0.48)0.98O3 or PNZT(2/52/48) on 3 in. diam (011¯2) sapphire. The epitaxial nature (with at least single crystal-like texture) of these films was ascertained by HRTEM and x-ray diffraction studies, including pole figure analysis. Such PNZT thin films (0.6 μm) were transparent to wavelengths between 0.4 and 5.6 μm, and exhibited an optical band gap and a refractive index (at 0.6328 μm), of 3.6 eV and 2.5–2.6, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107616
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  • 7
    Electronic Resource
    Electronic Resource
    Variations In Upper Mantle Structure Under Northern Australia (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 114 (1993), S. 0 
    Details
    ISSN: 1365-246X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Temporary array deployments of short-period seismometers in northern Australia have been used to build up composite record sections for waves interacting with the upper mantle. Stable measures of the seismic wavefield are provided by stacking the complex envelopes of all the seismic waveforms falling in a 10km distance interval away from the source.Two groups of sources (a) along the Flores Arc, Indonesia with propagation under northwestern Australia, and (b) in New Guinea with paths to the NNE of the array, have been used to construct composite record sections for both P and SV waves over the distance range 1300–2800 km. the timing and amplitude distributions for P waves from the two regions show noticeable differences. Detailed modelling of the record sections yields velocity models with significant variation in velocity for the two sets of propagation paths for which the midpoints are separated by about 1000km.The short-period SV-wave sections indicate efficient propagation of highfrequency S waves in a lithosphere extending down to 210km. Arrivals from the deeper mantle cannot be correlated with confidence because of a loss in high-frequency content revealed by broad-band observations. This requires a significant attenuation zone for S beneath 210 km.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-246X.1993.tb03919.x
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  • 8
    Electronic Resource
    Electronic Resource
    Contrast mechanisms in photothermal scanning tunneling microscopy (1994)
    Springer
    Applied physics 59 (1994), S. 109-113 
    Details
    ISSN: 1432-0630
    Keywords: 42.60.Fc ; 61.30 ; 68.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By irradiation of the tunneling junction of a scanning tunneling microscope with intensity-modulated laser light a gap-width modulation due to thermal expansion of tip and sample was produced. Photothermal images were obtained by spatial mapping of the resulting modulation of the tunneling current or its logarithm. The various mechanisms responsible for the observed contrast are discussed quantitatively. In case of a highly corrugated gold film on mica the contrast arises mainly from either the current variations caused by the non-zero reaction time of the current control loop or from a geometry factor. In both cases the images reflect certain properties of the sample topography. On the other hand, for a liquid-crystal film adsorbed on graphite a contrast on a molecular scale was found which is attributed to variations of the effective barrier height.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332202
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  • 9
    Electronic Resource
    Electronic Resource
    Resistance to Ascochyta blight in chickpea - Genetic basis (1993)
    Springer
    Euphytica 68 (1993), S. 147-153 
    Details
    ISSN: 1573-5060
    Keywords: chickpea ; Cicer arietinum ; resistance ; Ascochyta blight ; Ascochyta rabiei ; genetics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Summary Genetic regulation of host resistance in chickpea-Ascochyta rabiei interaction system is governed by two dominant complementary genes each in the genotypes GLG 84038 and GL 84099, whereas the resistance in a black seeded genotype ICC 1468 was controlled by one dominant and one recessive independent gene. In all the genotypes, resistance is operated by inter-allelic interactions. The genes conferring resistance in GLG 84038 were found to be different to those operating in GL 84099 and ICC 1468. Among the five dominant genes dispersed in 3 genotypes under study, at least one has been reported for the first time, as to date, only three dominant genes have been reported in the literature. The four identified dominant genes in GLG 84038 and GL 84099 have been named as Arc1, Arc2 (in GLG 84038) and Arc3, Arc4 (in GL 84099). The undistinguished dominant gene in ICC 1468 has been named as Arc5(3,4) as it could not be equated or differentiated from Arc3 or Arc4. The recessive gene in ICC 1468 has been named as Arc1. Generation mean analysis of the 6 resistant × susceptible crosses involving the same genotypes, revealed that the genes conferring resistance in any of the 3 genotypes did not follow simple Mendelian inheritance but were influenced by inter allelic interactions. Additive gene effect along with dominance were operative in all the 3 genotypes under study in conferring resistance. However, the mechanism of resistance in GLG 84038 and GL 84099 were primarily additive in nature while that in ICC 1468, dominance as well as dominance × dominance interactions were more important than additive gene action.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00024163
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  • 10
    Electronic Resource
    Electronic Resource
    Structure evolution in the PbO-ZrO2-TiO2 sol-gel system: Part I — Characterization of prehydrolyzed precursors (1994)
    Springer
    Journal of sol gel science and technology 1 (1994), S. 251-265 
    Details
    ISSN: 1573-4846
    Keywords: precursor synthesis ; complexation reactions ; spectroscopy and analytical chemistry ; ferroelectric films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract In this investigation, several spectroscopic and analytical techniques were used to determine the chemical compositions and structures of the lead, zirconium, titanium, and Pb-(Zr, Ti) alkoxides involved in the sol-gel synthesis of PZT thin films. These techniques included 1H, 13C, and 207Pb NMR; FT-IR; gas chromatography; Karl Fischer titration; and number-average molecular weights (M n ) determined by cryoscopy. It was found that the titanium precursor had a M n of 548 and a formula of [Ti(OCH2CH2OCH3)4]1.6; the zirconium precursor had a M n of 1015 and a formula of [Zr(OCH2CH2OCH3)4]2.6; and the lead precursor had a formula Pb6(OOCCH3)5(OCH2CH2OCH3)7. 4 H2O and a molecular weight of 2131 (M n =2113). It was observed that residual water from the incomplete dehydration of lead acetate trihydrate coupled with released water due to the esterification of acetic acid caused M-O-M (M=Pb, Zr, Ti) bonds in the Pb-(Zr, Ti) alkoxide. Two possible isomeric structures of the Pb-(Zr, Ti) alkoxide have been proposed. They are both cyclic and have a formula of Pb2M′M″O2(OR)8(ROH)2, (M′M″=Zr and/or Ti) and a molecular weight of 1336 (M n =1386).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00486168
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