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  • American Institute of Physics (AIP)  (2)
  • 1990-1994  (2)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6241-6243 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization process and magnetic properties of Fe–P–C–Cu–Ge–Si amorphous alloys were investigated. After annealing above the crystallization temperature, the bcc Fe particles, with nanoscale grain size, precipitated in the amorphous alloy for a wide P concentration range. The volume ratio of the bcc Fe phase to amorphous was about 30%. The mixed phase of these alloys shows a drastic decrease of coercive force (Hc) and particle diameter (d) as P concentration increases. The lowest Hc was obtained for Fe78P16C2Cu0.5Ge3Si0.5, and Hc and d were 1.8 A/m and 16 nm, respectively. Observation by in situ Lorentz scanning electron microscopy (SEM) revealed that the width of magnetic domains were 0.01 or 0.1 mm and the domain walls with smaller bcc Fe particles moved in a weaker magnetic field than those with larger ones. So the low Hc is attributed to the decrease of magnetocrystalline anisotropy caused by fine structures. The core loss of fine crystalline Fe–P–C–Cu–Si–Mo alloy, W14/50, was 0.22 W/kg after annealing under a magnetic field of 2.4 kA/m.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3353-3354 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of nitrogen acceptor compensation in ZnSe:N has been studied by secondary ion mass spectrometry (SIMS) and infrared absorption (FTIR) measurements. Nitrogen-doped ZnSe layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ammonia gas was used as a nitrogen source. SIMS analysis has revealed that hydrogen was incorporated only into the ZnSe:N layer with the same concentration as nitrogen. FTIR measurements at 11 K strongly suggest the presence of N—H bonding at 3193 cm−1. It is concluded that hydrogen passivation is responsible for the acceptor compensation.
    Type of Medium: Electronic Resource
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