ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon carbide (SiC) films have been deposited on a silicon substrate by the chemical vapor deposition method using the Si2H6 and C2H2 gas system. The carbon content in the films was dependent on the volume-to-surface ratio (V/S) of the reactor. Study of the film formation mechanism indicated that the change in film composition was caused by V/S-dependent contributions of three film precursors. Films formed by surface reaction of Si2H6 gave a composition of SiC2, while films formed by gaseous species, most plausibly, SiH2 and SiH3C≡CH, showed a stoichiometric composition of SiC.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107725
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