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  • 1990-1994  (30)
  • 1985-1989  (15)
  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of CoSi2 on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1700-1706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of CoSi2 films by the reaction of ternary Co/Ti/Si system has been investigated. Ti and Co films were sequentially deposited on Si substrates by ion beam sputtering. It succeeded in the growth of epitaxial single-crystalline CoSi2 films on both Si(111) and Si(100) substrates through a multistep annealing process with temperatures from 550 to 900 °C in a nitrogen environment. A thin layer of TiN was formed on top of the epitaxial CoSi2. The values of Rutherford backscattering spectrometry/channeling minimum yield χmin for the epitaxial CoSi2 films were in the range of 10%–14%. The epitaxial CoSi2 grown on Si(111) was found to be composed of type B.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354824
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical transport properties of CoSi2 and Co(SixGe1−x)2 films formed by different methods (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5427-5432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co-evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3-μΩ-cm and room-temperature (RT) resistivity of 15 μΩ cm. The co-evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250 °C show a low resistivity of 70–80 μΩ cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2–3×1022 cm−3, while the carrier Hall mobility has large differences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350200
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  • 3
    Electronic Resource
    Electronic Resource
    Hall effect of the high-Tc superconducting Bi-Sr-Ca-Cu-O thin film (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 218-222 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall effect of BiSrCaCuO thin film is studied in the temperature range of 2–300 K. In the normal state the Hall-effect data show a holelike carrier conduction and the Hall coefficient decreases slowly with increasing temperature. The hole density obtained at room temperature is 3×1021 cm−3. Near the superconducting transition temperature (TMid =83 K), the Hall coefficient shows a rapid change and drops sharply from a positive value to a negative minimum value with decreasing temperature.The possible physical meaning of the obtained results is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347119
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  • 4
    Electronic Resource
    Electronic Resource
    Controlling of Schottky barrier heights for Au/n-GaAs and Ti/n-GaAs with hydrogen introduced after metal deposition by bias annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2719-2721 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Up to now, in most of the research work done on the effect of hydrogen on a Schottky barrier, the hydrogen was introduced into the semiconductor before metal deposition. This letter reports that hydrogen can be effectively introduced into the Schottky barriers (SBs) of Au/n-GaAs and Ti/n-GaAs by plasma hydrogen treatment (PHT) after metal deposition on 〈100〉 oriented n-GaAs substrates. The Schottky barrier height (SBH) of a SB containing hydrogen shows the zero/reverse bias annealing (ZBA/RBA) effect. ZBA makes the SBH decrease and RBA makes it increase. The variations in the SBHs are reversible. In order to obtain obvious ZBA/RBA effects, selection of the temperature for plasma hydrogen treatment is important, and it is indicated that 100 °C for Au/n-GaAs and 150 °C for Ti/n-GaAs are suitable temperatures. It is concluded from the analysis of experimental results that only the hydrogen located at or near the metal-semiconductor interface, rather than the hydrogen in the bulk of either the semiconductor or the metal, is responsible for the ZBA/RBA effect on SBH.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109243
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical resistivity and Hall effect of TiSi2 thin films in the temperature range of 2–300 K (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5416-5421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical resistivity and Hall effect of TiSi2 thin films were measured systematically in the temperature range of 2–300 K. The results were compared with theory and other work. The TiSi2 films were formed by Ti/Si solid-state interaction on crystalline silicon or polysilicon substrates. The temperature dependence of the electrical resistivity of TiSi2 was approximated by the Bloch–Gruneisen theory. The Hall-effect data show a multicarrier conduction mechanism in TiSi2. At low temperatures the Hall coefficient is positive for both substrates, but is negative at room temperature. The temperature at which the change of sign occurs is approximately 180 K for the crystalline-Si substrate, and approximately 90 K for the polysilicon substrate. This is discussed briefly in terms of scattering mechansims for a simple model of the electronic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343689
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  • 6
    Electronic Resource
    Electronic Resource
    Complex behaviours of AB model describing idiotypic network (1994)
    Springer
    Bulletin of mathematical biology 56 (1994), S. 323-336 
    Details
    ISSN: 1522-9602
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Mathematics
    Notes: Abstract A simple chemical model of the idiotypic network of immune systems, namely the AB model, has been developed by De Boeret al. The complexity of the system, such as the steady states, periodic oscillations and chaotic motions, has been examined by the authors mentioned above. In the present paper, the periodic motions and chaotic behaviours exhibited by the system are intuitively described. To clarify in which parameter domains concerned the system exhibits periodic oscillations and in which parameter domains the system demonstrates chaotic behaviours the Lyapounov exponent is explored. To characterize the strangeness of the attractors, the fractal dimension problem is worked out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02460645
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  • 7
    Electronic Resource
    Electronic Resource
    Inhibition of vascular endothelial growth factor-induced angiogenesis suppresses tumour growth in vivo (1993)
    [s.l.] : Nature Publishing Group
    Nature 362 (1993), S. 841-844 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] VEGF has several attractive features as a mediator of normal and pathological angiogenesisis. VEGF is an endothelial cell-specific mitogen and an angiogenesis inducer in vivo6'9. Its high-affinity binding sites are localized only on endothelial cells in tissue sections10. VEGF was also purified ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/362841a0
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  • 8
    Electronic Resource
    Electronic Resource
    Quantification of directional and orientational selectivities of visual neurons to moving stimuli (1994)
    Springer
    Biological cybernetics 70 (1994), S. 281-290 
    Details
    ISSN: 1432-0770
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Computer Science , Physics
    Notes: Abstract. Directional and orientational components usually coexist and are mixed in the cell's overall responses when moving optical stimuli are used to study the response characteristics of visual neurons. While these two properties were quantified with all the previous methods for data analysis, their effects could not be efficiently separated from each other, and thus the analyses were imperfect. In this paper, theoretical evidence and examples are provided to show the defects of the old methods. In order to separate the two components completely, we propose to apply optimal regression analysis with the sine-cosine function series as the fundamental variables. Based on this separation, we defined the orientational selectivity as variation of response strength with orientation and performed integration and averaging to quantify the two properties [cf. Eqs. (5) and (6)]. The present method has the advantages of completeness and accuracy, and can detect some details which would have been missed by other methods. An explanation of the intrinsic implications of the method and our comprehension of directional and orientational selectivities and preferred direction and orientation are also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004220050032
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  • 9
    Electronic Resource
    Electronic Resource
    Quantification of directional and orientational selectivities of visual neurons to moving stimuli (1994)
    Springer
    Biological cybernetics 70 (1994), S. 281-290 
    Details
    ISSN: 1432-0770
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Computer Science , Physics
    Notes: Abstract Directional and orientational components usually coexist and are mixed in the cell's overall responses when moving optical stimuli are used to study the response characteristics of visual neurons. While these two properties were quantified with all the previous methods for data analysis, their effects could not be efficiently separated from each other, and thus the analyses were imperfect. In this paper, theoretical evidence and examples are provided to show the defects of the old methods. In order to separate the two components completely, we propose to apply optimal regression analysis with the sine-cosine function series as the fundamental variables. Based on this separation, we defined the orientational selectivity as variation of response strength with orientation and performed integration and averaging to quantify the two properties [cf. Eqs. (5) and (6)]. The present method has the advantages of completeness and accuracy, and can detect some details which would have been missed by other methods. An explanation of the intrinsic implications of the method and our comprehension of directional and orientational selectivities and preferred direction and orientation are also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00197609
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  • 10
    Electronic Resource
    Electronic Resource
    Symmetry breaking in τ decay (1988)
    Springer
    The European physical journal 40 (1988), S. 559-563 
    Details
    ISSN: 1434-6052
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In view of the recent attempts to detect theG-parity violating decay τ→πηv τ which may have bearing on the presence of the second class current, we discuss the isospin symmetry breaking effects in the processes of τ→δv, Bv, and ηπv from a dynamical point of view. It is shown that all the symmetry breaking effects are proportional to theu−d quark mass difference. Depending on whether the current or the constituent quark masses are used, the decay τ→πηv τ via δ is either of the same order or three orders of magnitude smaller than the upper limit set by the latest experiments. This is in agreement with the other theoretical estimates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01560227
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