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  • 1990-1994  (28)
  • 1985-1989  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 984-992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of GaAs and (Al,Ga)As doped with boron (from diborane) and silicon was investigated to examine the effect of boron on (DX) centers in silicon-doped material. The addition of diborane to the growth of GaAs and (Al,Ga)As results in the superlinear incorporation of boron into the solid with a concurrent reduction in the growth rate. Boron incorporation also decreases as the growth temperature is increased. Additionally, the AlAs mole fraction increases with increasing diborane during (Al,Ga)As growth. The DX center was not eliminated in (Al,Ga)As by the addition of boron. The thermal stability of these materials was also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351295
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  • 2
    Electronic Resource
    Electronic Resource
    The role of dislocation-dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4814-4819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of dislocation-dislocation interactions on the relaxation behavior of biaxially stressed semiconductor thin films is considered by including interaction terms in an energy minimization. Both parallel and crossing interactions are considered and energies are calculated for orthogonal arrays of equally spaced 60° misfit dislocations, and it is shown that the parallel interactions can be either attractive or repulsive. The equilibrium misfit dislocation density is shown to be a function of the "cutoff'' distance for dislocation interactions in these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350623
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  • 3
    Electronic Resource
    Electronic Resource
    Correlation of interface recombination and dislocation density at GalnP/GaAs heterojunctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2418-2420 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lifetimes at Ga1−xInxP/GaAs heterojunction interfaces determined by photoluminescence power dependence measurements and diffusion model calculations have been correlated to dislocation densities derived from high-resolution x-ray diffraction measurements. The diffusion model calculations are used to determine lifetimes in the region of misfit dislocations by fitting experimental power dependencies of buried-layer photoluminescence. High-resolution x-ray diffraction reveals dislocation densities through the broadening of diffraction peaks due to slight lattice tilts introduced by the dislocations. Lifetimes and dislocation density per dislocation length are correlated to show the functional relationship between the dislocation density and the density of the lifetime-limiting recombination center at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356264
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of buried pseudomorphic InGaAs layers using high-resolution x-ray diffraction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3362-3366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness and composition of the InGaAs layer in GaAs/AlGaAs/InGaAs/AlGaAs/GaAs high-electron-mobility transistor devices were determined to within ±5 A(ring) and ±0.003, respectively, using high-resolution x-ray diffraction. The combined thickness of the capping AlGaAs and GaAs layers were also determined to within ±5 A(ring). Although the interference effects near the substrate peak in the diffraction pattern may be identical for structures with different InGaAs thicknesses, the peak from the buried InGaAs layer will be different. In other words, if the diffraction from the buried layer is measured, one can readily distinguish between structures whose interference peaks are otherwise the same. It is also shown that the use of different reflections removes the ambiguity associated with interference peaks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357461
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  • 5
    Electronic Resource
    Electronic Resource
    Strain and mosaic spread of carbon and gallium co-implanted GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2066-2069 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain and crystalline perfection of GaAs implanted with either carbon, gallium, or both carbon and gallium ions (5×1014 cm−2) were investigated using high-resolution triple axis diffractometry. We determined that a significant amount of carbon occupied substitutional sites after rapid thermal annealing only when gallium was co-implanted. The carbon in the carbon-implanted layer remained in nonsubstitutional sites after annealing. In both cases, most of the lattice strain in the implanted layer decreases upon annealing, but a defective crystalline structure with an extensive mosaic spread evolves. Conventional double-axis x-ray measurements were employed for comparison.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357615
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1979-1981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intentional oxygen doping ((approximately-greater-than)1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen-bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorporation of oxygen and very low levels of Al (AlAs mole fraction 〈0.005) in the GaAs layers leads to the compensation of intentionally introduced Si donors. Additionally, deep levels in GaAs associated with oxygen were detected. The introduction of dimethyl aluminum methoxide during AlxGa1−xAs growth did not alter Al mode fraction or degrade the crystallinity of the ternary layers, but did incorporate high levels of oxygen which compensated Si donors. The compensation in both GaAs and Al0.30Ga0.70As indicates that high resistivity buffer layers can be grown by oxygen doping during metalorganic vapor phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105038
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  • 7
    Electronic Resource
    Electronic Resource
    Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1040-1042 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaAs have been grown by metalorganic molecular beam epitaxy (MOMBE) with atomic carbon concentrations ranging from 4×1017 to 3.5×1020 cm−3. The dependences of GaAs lattice parameter and hole concentration on atomic carbon concentration have been determined from x-ray diffraction, Hall effect, and secondary-ion mass spectrometry measurements. For atomic carbon concentrations in excess of 1×1019 cm−3, the hole concentrations are less than the corresponding atomic carbon concentrations. Lattice parameter shifts as large as 0.2% are observed for carbon concentrations in excess of 1×1020 cm−3, which results in misfit dislocation generation in some cases due to the lattice mismatch between the C-doped epilayer and undoped substrate. Over the entire range of carbon concentrations investigated, Vegard's law accurately predicts the observed lattice contraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102608
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  • 8
    Electronic Resource
    Electronic Resource
    The contrastive behavior of Fe and Cr during the intrinsic gettering of silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6716-6720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We found that Fe and Cr exhibit significantly different characteristics in being gettered during a high (1150 °C), low (750 °C), and medium (1000 °C) temperature cycle in Czochralski silicon. The behavior of Fe and Cr was monitored using deep level transient spectroscopy. Although Si was highly supersaturated with respect to both species throughout the low temperature step, Fe was gettered but Cr was not. This behavior indicated that a barrier to bulk silicide formation on oxide precipitates existed for Cr, but not for Fe at this temperature. We attribute the gettering of Cr at 1000 °C to the production of strain and Si interstitials during oxide precipitate growth. Since the differences in gettering behavior cannot be explained in terms of diffusivity and supersaturation, we propose a model which considers additional physical and chemical interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342002
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  • 9
    Electronic Resource
    Electronic Resource
    Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 454-456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic doping of epitaxial grown Si over the temperature range from 850 °C to 550 °C was investigated in an ultraclean atmospheric-pressure chemical vapor deposition reactor. Growth was carried out from dichlorosilane (DCS) in H2 carrier gas. Arsenic could be incorporated into single crystal silicon at levels approaching 10 at. %. Carrier concentrations exceeding 1×1020/cm3 were obtained for the as-grown films. The material remained single-crystalline, as measured by ion channeling and cross-section transmission electron microscopy, and exhibited excellent surface morphology with no Hillock formation observed. AsH3 dramatically enhanced the growth rate of Si at lower temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106632
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal stability of Si1−xCx/Si strained layer superlattices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2758-2760 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of epitaxial silicon-carbon alloys grown by molecular beam epitaxy on (001) silicon was investigated using high resolution x-ray diffraction, transmission electron microscopy, and secondary ion mass spectroscopy measurements. Different superlattices, with alloy compositions of Si0.997C0.003, Si0.992C0.008, and Si0.985C0.015, all nominally 6 nm thick, with 24 nm Si spacer layers were employed. Annealing studies determined that there are different pathways to strain relaxation in this material system. At annealing temperatures of 900 °C and below, the structures relax only by interdiffusion, indicating that these layers are stable during typical device processing steps. At temperatures of 1000 °C and above, SiC precipitation dominates with enhanced precipitation in the Si1−xCx layers with the highest initial carbon content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106868
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