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  • 1995-1999  (27)
  • 1
    Electronic Resource
    Electronic Resource
    Effect of substrate temperature on Si compensation in δ-doped InSb and AlxIn1−xSb grown by molecular beam epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 205-208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dopant compensation was studied for Si δ-doped InSb samples grown on GaAs (001) substrates. Hall-effect measurements indicate a sharp decline in electron density with increased substrate temperature when doping and cap-layer growth occur on the pseudo-(1×3) surface reconstruction, while little temperature dependence is observed for doping and growth on the c(4×4) surface reconstruction. Hall-effect measurements on samples grown with the substrate temperature differing between the dopant and cap layers rule out simple diffusion and desorption of Si atoms, and, along with secondary-ion mass spectrometry measurements, suggest that the temperature dependence of the carrier density results from compensation occurring primarily during growth of the cap layer. Similar behavior was observed in AlxIn1−xSb samples δ-doped with Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368018
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of temperature on the infrared and sum-frequency generation spectra of adsorbates (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 5920-5927 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dephasing and energy relaxation contributions to the line width in infrared (IR) and sum-frequency generation (SFG) spectra of adsorbates are derived from the generalized master equation approach. Expression for the line shift is also obtained. The anharmonic interaction between the adsorbate and the substrate is expanded in a polynomial in terms of the adsorbate and phonon coordinates, and the dephasing is shown to be mainly due to two-phonon processes, while two-phonon, three-phonon or four-phonon processes can contribute to energy relaxation, depending on the relative values of the adsorbate vibrational and the phonon frequencies. The temperature-dependence data of the IR absorption for C(111):H is found to be consistent with the theory, and the large line width for C(111):D can be accounted for by the efficient two-phonon energy relaxation process which is not available for C(111):H due to the higher adsorbate vibrational frequency for C(111):H. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473257
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  • 3
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction study of the molecular beam epitaxial growth of CaF2 on Si(110) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1695-1697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxial growth of CaF2 on Si(110) was studied using reflection high-energy electron diffraction (RHEED) and scanning electron microscopy (SEM). An optimum substrate temperature range exists between 800 and 900 °C within which (110)-oriented epitaxy can be sustained. At the initial growth stage, long strips of CaF2 parallel to the [1¯10] direction are formed due to the growth anisotropy on the (110) surface. This is followed by the development of low-energy {111} facets, producing a ridged and grooved surface morphology. Growth then proceeds via the stacking of {111} planes on the sidewalls of the ridges. This surface morphology is believed to result from the combination of favorable energetics in exposing the low-energy {111} facets and the presence of twinned crystallographic domains. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115060
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  • 4
    Electronic Resource
    Electronic Resource
    Eu-doped CaF2 grown on Si(100) substrates by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1891-1893 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Eu is incorporated into CaF2 films grown on Si(100) by molecular beam epitaxy using elemental Eu evaporation. Eu doping as high as 4.05 at. % does not significantly degrade the surface morphology, indicating a relatively high solubility of Eu in CaF2. Photoluminescence spectra from Eu-doped CaF2 show strong blue emissions from Eu2+ ions in cubic sites. The inhomogeneous broadening of the zero-phonon line near 24 190 cm−1 is reduced by ∼20% upon in situ annealing at 1100 °C. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114367
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1708-1714 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular beam epitaxy of InSb/Si structures was accomplished using group IIa fluoride buffer layers. InSb growth was initiated by opening the In and Sb shutters simultaneously at substrate temperatures between 300 °C and 400 °C, producing In-terminated InSb(111)-A surfaces on CaF2/Si(111) substrates. Reflection high-energy electron diffraction, electron channeling, and high resolution x-ray diffraction measurements indicated that the InSb layers were of good crystalline quality. Electron mobilities at room temperature were as high as 65 000 cm2/V s for an 8-μm-thick InSb layer grown on CaF2/Si(111). On CaF2/Si(001) substrates, the InSb layers grew in the (111) orientation with two domains 90° apart. These InSb layers and ones grown on BaF2/CaF2/Si(111) substrates exhibited inferior electrical and structural properties compared to structures grown on CaF2/Si(111) substrates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364028
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  • 6
    Electronic Resource
    Electronic Resource
    Multiresolution reproducing kernel particle methods (1997)
    Springer
    Computational mechanics 20 (1997), S. 295-309 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Reproducing Kernel Particle Methods (RKPM) with a built-in feature of multiresolution analysis are addressed. Some fundamental concepts such as reproducing conditions, and correction function are constructed to systematize the framework of RKPM. In particular, Fourier analysis, as a tool, is exploited to further elaborate RKPM in the frequency domain. Furthermore, we address error estimation and convergence properties. We present several applications which confirm the widespread applicability of multiresolution RKPM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004660050252
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  • 7
    Electronic Resource
    Electronic Resource
    Advances in multiple scale kernel particle methods (1996)
    Springer
    Computational mechanics 18 (1996), S. 73-111 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  A novel approach to multiresolution analysis based on reproducing kernel particle methods (RKPM) and wavelets is presented. The concepts of reproducing conditions, discrete convolutions, and multiple scale analysis are described. By means of a newly proposed semidiscrete Fourier analysis, RKPM is further elaborated in the frequency domain, and the interpolation estimate and the convergence of Galerkin solutions are given. The elimination of a mesh, combined with the properties of the dilation and translation of a window function, multiresolution analysis, wavelet-based error estimators, and edge detection brings about a new generation of hp adaptive methods. In addition, this class of multiple scale reproducing kernel particle methods is particularly suitable for problems with large deformations, high gradients, and high modal density. The current application areas of RKPM include structural acoustics, structural dynamics, elastic-plastic deformation, computational fluid dynamics and hyperelasticity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004660050131
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  • 8
    Electronic Resource
    Electronic Resource
    Advances in multiple scale kernel particle methods (1996)
    Springer
    Computational mechanics 18 (1996), S. 73-111 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A novel approach to multiresolution analysis based on reproducing kernel particle methods (RKPM) and wavelets is presented. The concepts of reproducing conditions, discrete convolutions, and multiple scale analysis are described. By means of a newly proposed semidiscrete Fourier analysis, RKPM is further elaborated in the frequency domain, and the interpolation estimate and the convergence of Galerkin solutions are given. The elimination of a mesh, combined with the properties of the dilation and translation of a window function, multiresolution analysis, wavelet-based error estimators, and edge detection brings about a new generation of hp adaptive methods. In addition, this class of multiple scale reproducing kernel particle methods is particularly suitable for problems with large deformations, high gradients, and high modal density. The current application areas of RKPM include structural acoustics, structural dynamics, elastic-plastic deformation, computational fluid dynamics and hyperelasticity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00350529
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  • 9
    Electronic Resource
    Electronic Resource
    Synchronized reproducing kernel interpolant via multiple wavelet expansion (1998)
    Springer
    Computational mechanics 21 (1998), S. 28-47 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper, a new partition of unity – the synchronized reproducing kernel (SRK) interpolant – is derived. It is a class of meshless shape functions that exhibit synchronized convergence phenomenon: the convergence rate of the interpolation error of the higher order derivatives of the shape function can be tuned to be that of the shape function itself. This newly designed synchronized reproducing kernel interpolant is constructed as an series expansion of a scaling function kernel and the associated wavelet functions. These wavelet functions are constructed in a reproducing procedure, simultaneously with the scaling function kernel, by directly enforcing certain orders of vanishing moment conditions. To the authors knowledge, this unique interpolant is the first of its kind to be constructed, and to be used in numerical computations, both in concept and in practice. The new interpolants are in fact a group of special hierarchial meshless bases, and similar counterparts may exist in spline interpolation method, other meshless methods, Galerkin-wavelet method, as well as the finite element method. A detailed account of the subject is presented, and the mathematical principle behind the construction procedure is further elaborated. Another important discovery of this study is that the 1st order wavelet together with the scaling function kernel can be used as a weighting function in Petrov-Galerkin procedures to provide a stable numerical computation in some pathological problems. Benchmark problems in advection-diffusion problems, and Stokes flow problem are solved by using the synchronized reproducing kernel interpolant as the weighting function. Reasonably good results have been obtained. This may open the door for designing well behaved Galerkin procedures for numerical computations in various constrained media.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004660050281
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  • 10
    Electronic Resource
    Electronic Resource
    Nanogram Scale Determination of the Volume Change of Solidification of an Indium-Rich Alloy by AFM (1998)
    Springer
    Journal of materials science 17 (1998), S. 943-946 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026412606300
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