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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5388-5393 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and cathodoluminescence studies, performed at room temperature, on Sr1−xErxF2+x/InP(100) layers exhibit strong light emissions in both the visible range and in the infrared domain. It is shown that in the visible range the highest intensities were found for x=0.02, while for the 4I13/2→4I15/2 infrared emission (1.53 μm) the maximum of luminescence was found for x close to 0.2. For a 4I15/2→4I11/2 (980 nm) excitation, up conversion leads to visible light emissions (red and green). A photoluminescence study at low temperature (2 K) shows that, due to the low growth temperature of the layers, the Er3+ environment is more simple than in bulk crystals. For x=0.03 a single charge compensated Er3+ ion site was evidenced. Up to x=0,15 this site predominates but a clustering process is evidenced. © 1995 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 494-498 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature photoluminescence studies of Ca1−xErxF2+x thin films epitaxially grown on silicon substrates exhibit strong light emissions in both the visible range and the infrared domain. With an Ar+-ion laser as an excitation source, the maximum of the 4I13/2→4I15/2 infrared (1530 nm) luminescence of Er3+ (4f11) ions was found for x=0.16. It is assumed that a particular Er3+ ion environment exists in the layers to explain why the quenching phenomena do not dominate at these very high erbium concentrations. To describe this environment, a photoluminescence study at low temperature (2 K) has been performed which shows that only one Er3+ ion site (having C4v symmetry) predominates for an erbium substitution rate x≤0.02. At higher Er3+ concentrations, however, a clustering process of erbium ions is observed. In thin films, however the clustering appears only at concentrations two orders of magnitude higher than in bulk single cystals. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1523-1530 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study concerning the excitation mechanism of the Yb impurity in n- and p-type InP crystals was performed by the method of optically detected microwave-induced impact ionization. Based on the results it is argued that the Yb3+ core excitation is intermediated by a nonradiative recombination of a bound exciton. A fingerprint of the existence of such an excitonic state is given. Also, the nonradiative decay channel is discussed and shown to involve an Auger process with the energy transfer to a locally bound electron. Experimental evidence is presented that by the impact ionization of the bound electron the nonradiative recombination channel may be removed, leading to an increase of the characteristic Yb3+ luminescence. An unprecedented microwave-induced 5% increase of the Yb3+ intrashell emission has been recorded. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1850-1852 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the strained-induced 2D–3D transition, InAs dots have been grown on InP(001) and examined by transmission electron microscopy. Two different modes of island size and spatial distribution have been identified. For deposit of 1.5 and 1.8 monolayers, the islands are about 7 nm high and randomly distributed. Above 2 monolayers, they are about five times smaller in volume and locally self-organized, with a typical distance of 40 nm independent of the island density. It is suggested that the strong dependence of the island size on the total amount of deposited InAs is mainly due to long range interactions through the substrate. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3576-3578 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the performance of a semiconductor photorefractive p-i-n diode operating at 1.55 μm in the longitudinal quantum-confined Stark geometry. The device structure consists of a semi-insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p-n junction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements. © 1996 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2818-2820 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of self-assembled InAs dots on InP have been measured by photoluminescence, and using a selective chemical etching of the InP cap layer, the geometrical properties of the same dots have been determined by atomic force microscopy. From the dot dimensions, the calculated (n=1) electron to heavy hole transition energies with a simple model are strongly correlated to the measured photoluminescence spectra. This technique allows a better understanding of the correlation between structural and optical properties of self-assembled dots. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3356-3358 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the synthesis of InAs quantum dots on (311)B InP substrates. It is found that the use of such high index surfaces allows the formation of a high density (5×1010 islands/cm2) of small InAs islands (diameter(approximate)350 Å) on InP. Moreover, a large improvement of the size uniformity is obtained in comparison with deposition on (100) surface. The standard height deviations are ±13% and ±50% for islands grown on (311)B and (100) surfaces, respectively. Then, we show that the modification of the As/P flux sequences, after the island formation, permits the control of the quantum dot emission wavelength. The achievement of quantum dots emitting at 1.55 μm at 300 K indicates that this method is promising for telecom device making. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 442-444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the molecular beam epitaxy growth of (Al) GaAsSb/AlAsSb Bragg reflectors around the 1.55 μm wavelength region. Mirrors with 96% reflectivity have been achieved by using ten pairs of quarter wavelength layers. This demonstrates the capability of the (Al) GaAsSb/AlAsSb system to achieve efficient Bragg mirrors lattice matched to InP substrates. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3530-3532 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the carrier dynamics of self-assembled InAs quantum dot structures on InP (311)B substrates is presented. By time-resolved photoluminescence spectroscopy, an efficient carrier capture from the wetting layer into the quantum dots is observed under high incident excitation condition. This behavior can be attributed to carrier relaxation assisted by the Auger effect. Moreover, first excited states which have a fast decay time of ∼60 ps are observed under the same condition. These results demonstrate the possibility of the realization of performance-improved injection lasers at 1.55 μm for optical telecommunication. © 1999 American Institute of Physics.
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  • 10
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract. One of the most prevalent hereditary syndromes associated with colorectal cancer is hereditary nonpolyposis colorectal cancer (HNPCC). The inherited gene defects in HNPCC have been shown to reside in DNA mismatch repair genes, mostly hMSH2 or hMLH1. Most HNPCC patients are heterozygous with regard to the relevant mismatch repair gene; they have one normal and one mutated allele, and mismatch repair in normal somatic cells is functional. Cancer predisposition in HNPCC is believed to be associated with the loss of the wild-type allele in somatic cells, resulting in defective DNA mismatch repair. This gives rise to DNA microsatellite instability (MSI), an increased somatic mutation rate, and eventually, to the accumulation of mutations in genes involved in colorectal carcinogenesis. In support of this theory, colorectal tumors in HNPCC patients and in mice deficient for hMSH2 or hMLH1 show MSI. Here, we describe two missense mutations in hMLH1 exon 16 associated with colorectal cancer. Interestingly, the tumors do not show MSI. This raises some potentially important issues. First, even microsatellite-negative colorectal tumors can be associated with germline mutations and these will be missed if an MSI test is used to select patients for mutation screening. Second, the lack of MSI in these cases suggests that the mechanism involved in carcinogenesis could be different from that generally hypothesized.
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